Applied Physics Letters

Vol. 126, Issue 11 Issue 11 2025
58
Articles

Articles in this Issue

Broadband carrier capture dynamics mechanism of carbon-related defects in GaN

Zhanpeng Chen, Fangyuan Shi, Yunfei Lv et al. Mar 17, 2025 10.1063/5.0260238

Fully understanding and modulating the nonlinear absorption in GaN are crucial for designing ultrafast photonic devices. In this work, both the ultra-broadband transient absorption spectra and carrier...

Investigation on the structural and electronic property of monoclinic Al2O3/β-Ga2O3 superlattice with varying layer periods

Jiahe Cao, Yan Wang, Chuang Zhang et al. Mar 01, 2025 10.1063/5.0252684

In this study, we employ first-principles calculations to explore the structural and electronic properties of monoclinic Al2O3/Ga2O3 superlattices with varied layer thickness and to perform a comparat...

Probing thickness-dependent tip-induced band bending in MoS2

Jian Liao, Takashi Taniguchi, Kenji Watanabe et al. Mar 01, 2025 10.1063/5.0252812

Scanning tunneling spectroscopy (STS) has played an important role in determining the electronic band structures of semiconductors. However, the tip-induced band bending (TIBB) could strongly affect t...

Angle-dependent asymmetric transmission in gradient 3D photonic crystals

Xian-Zi Dong, Yong-liang Zhang, Feng Jin et al. Mar 01, 2025 10.1063/5.0251657

Asymmetric transmission (AT) materials allow light to pass through differently depending on its direction, which is important for optical devices like isolators, encryption, and solar cells. Here, we...

Low-temperature growth of epitaxial BaTiO3 thin films with significant electro-optic coefficients

Yilin Cao, Yiyang Wen, Yongtao Yang et al. Mar 01, 2025 10.1063/5.0237644

Barium titanate (BaTiO3, BTO) thin films, with their exceptionally high Pockels coefficients, present a promising alternative to lithium niobate (LiNbO3, LN) for integrated photonic devices. BTO's com...

Phonon thermal transport in two-dimensional gallium nitride: Role of higher-order phonon–phonon and phonon–electron scattering

Jianshi Sun, Xiangjun Liu, Yucheng Xiong et al. Mar 01, 2025 10.1063/5.0256246

Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies have show...

Reversible solar heating and radiative cooling coupled with latent heat for self-adaptive thermoregulation

Qin Ye, Na Guo, Meijie Chen Mar 01, 2025 10.1063/5.0262028

Passive solar heating and radiative cooling attracted lots of attention in global energy consumption reduction due to their unique electricity-free advantage. However, static single radiation cooling...

Self-aligned plasmonic-nanofluidic system by continuous laser manufacturing

Yizhen Yu, Bo Yang, HuiJuan Huang et al. Mar 01, 2025 10.1063/5.0255321

The plasmonic−nanofluidic system incorporates the nanoplasmonic metal structure with nanofluidic channel, exhibiting improved performance in optofluidic sensing. However, the device requires sophistic...

Sliding-driven symmetry breaking induced ferroelectric polarization and phonon property modulation in a <b> <i>β</i> </b>-GaSe bilayer

Sihan Yan, Jia-Han Zhang, Bo Li et al. Mar 01, 2025 10.1063/5.0257780

Introducing ferroelectricity through symmetry breaking induces profound changes in the physical properties of a material. This study comprehensively tracks the ferroelectric polarization and phonon pr...

6-in. high-voltage GaN-based E-mode HEMTs with ultrathin barrier structures: Interface quality and its reliability

Nan Sun, Ronghua Wang, Huolin Huang et al. Mar 01, 2025 10.1063/5.0260365

In this Letter, high-voltage enhancement-mode (E-mode) GaN-based power devices were demonstrated by employing an ultrathin barrier epitaxial structure. We investigated the effects of interface states...

Comparative study of lithium niobate thin films-based surface acoustic wave resonators including temperature characterization

Luyao Liu, Shuxian Wu, Ting Wu et al. Mar 01, 2025 10.1063/5.0244876

This Letter presents a comparative study of surface acoustic wave (SAW) resonators on two different piezo-on-insulator (POI) substrates, 30° YX-LiNbO3/SiO2/sapphire and 30° YX-LiNbO3/SiO2/poly-Si/Si....

Synergic passivation of the interface between TiO2 and perovskite by multifunctional small molecules

Yanbin Chen, Yu Zhang, Xianghan Li et al. Mar 01, 2025 10.1063/5.0255283

Titanium dioxide (TiO2) is widely employed as an electron transport layer in perovskite solar cells due to its low manufacturing cost and favorable energy-level alignment. However, the suboptimal qual...

Steady-state transition of buckled nano graphite sheets in vibration processes

Xinjie Liu, Haiyan Hu, Xiao Wang et al. Mar 01, 2025 10.1063/5.0247821

Nanomechanical resonators crafted from two-dimensional materials exhibit heightened sensitivity to stress. The impact of tensile stress on resonators has received extensive attention. However, relativ...

Proposal and theoretical investigation of 229Th-doped nonlinear optical crystals for compact solid-state clocks

H. W. T. Morgan, R. Elwell, J. E. S. Terhune et al. Mar 01, 2025 10.1063/5.0247867

The recent laser excitation of the 229Th isomeric transition in a solid-state host opens the door for a portable solid-state nuclear optical clock. However, at present, the vacuum-ultraviolet laser sy...

Hydrogen spillover in superwetting Ni/NiMoN Mott-Schottky heterostructures for boosting ampere-level hydrogen evolution

Hongru Hao, Yu Zhang, Zhe Wang et al. Mar 01, 2025 10.1063/5.0250821

Realizing fast electron transfer and rapid mass transport in high current density hydrogen evolution reaction (HER) is pivotal and imperative for water electrolysis. Here, we developed Ni/NiMoN Mott-S...

Improved dimensional stability of zero-thermal-expansion Cu2P2O7/ZL101 composite by thermal treatment

Jiawei Zeng, Chenlong Wei, Guanyin Gao et al. Mar 01, 2025 10.1063/5.0254207

Compositing negative-thermal-expansion materials with Al is an effective strategy for obtaining light zero-thermal-expansion (ZTE) materials. However, the dimensional stability of those composites is...

Characterization and design of a low-noise second-order gradient SQUID with asymmetric shunt resistors

Yuxiao Guo, Jinjin Li, Xiaolong Xu et al. Mar 01, 2025 10.1063/5.0245555

A low-noise superconducting quantum interference device (dc-SQUID) with simplified design and readout electronics is highly desirable for various applications. We demonstrate that introducing an asymm...

Packing fraction related transport in disordered quantum dot arrays

K. Eshraghi, S. Natani, P. Bandaru Mar 01, 2025 10.1063/5.0250705

Models to describe electrical conduction in quantum dot (QD) constituted films often overlook the effects of geometric disorder. We address related issues by examining the influence of the QD packing...

Electro-optic time transfer with femtosecond stability

Joshua Olson, Robert Rockmore, Nathan D. Lemke et al. Mar 01, 2025 10.1063/5.0240786

Optical two-way time and frequency transfer (O-TWTFT) is an enabling technology that has applications ranging from fundamental investigations of relativity to the operation of global navigation satell...

Tunable spin dynamic damping and interfacial spin transparency in Py/Ho through magnetic field modulation

Mingming Tian, Qian Chen, Meiyang Ma et al. Mar 01, 2025 10.1063/5.0253095

Spin transmission is critical for the functionality of logic circuits, magnetic random-access memories, and magnetic sensors. Rare earth (RE) metals, which are promising candidates for tuning spin tra...

Increased Gilbert damping in yttrium iron garnet by low temperature vacuum annealing

D. M. Cheshire, D. Backes, L. S. I. Veiga et al. Mar 01, 2025 10.1063/5.0244429

The effect of thermal surface cleaning on the Gilbert damping (α) of yttrium iron garnet (YIG), before capping with a metallic layer, has been investigated. Our results show that α is strongly affecte...

Large out-of-plane piezoelectric response of ferromagnetic monolayer MoXF (X<b>=</b>S, Se): First principles predictions

Shiyu Xiao, Songli Dai, Furong Xu et al. Mar 01, 2025 10.1063/5.0255746

With both piezoelectric and ferromagnetic states, two-dimensional (2D) materials have garnered significant interest due to their immense potential in the field of spintronic devices. In this paper, th...

High-pressure and high-temperature induced phase transition and thermoelectric property modulation in CoSbS

Mengxiang Yang, Hongyu Zhu, Shuai Duan et al. Mar 01, 2025 10.1063/5.0259170

Paracostibite (CoSbS) has received significant attention as a thermoelectric material due to its earth-abundant, low-toxicity, and cost-effective constituent elements, as well as its potential applica...

Introduction of charge-trapping Al2O3/Ta2O5/Al2O3 dielectric stack in AlGaN/GaN high electron mobility transistors for programmable threshold voltage

Prachi Pohekar, Bhanu B. Upadhyay, Bazila Parvez et al. Mar 01, 2025 10.1063/5.0243137

The GaN family as an electronic material and AlGaN/GaN high electron mobility transistors (HEMTs) as electronic devices have found their widespread usage in power electronics and radio frequency (RF)...

Photoplastic anisotropy in nanoindentation of wurtzite ZnO single crystals

Hiroto Oguri, Yan Li, Xufei Fang et al. Mar 01, 2025 10.1063/5.0248543

Anisotropy plays a crucial role in understanding and optimizing the properties of materials with directional dependencies. The hexagonal wurtzite structure, which is a typical crystal structure in com...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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