Applied Physics Letters
Articles in this Issue
1.96 kV p-Cr2O3/<b> <i>β</i> </b>-Ga2O3 heterojunction diodes with an ideality factor of 1.07
In this Letter, we report on a p-Cr2O3/n-Ga2O3 vertical heterojunction diode (HJD) with a kilovolt-level breakdown voltage (BV). The chromium oxide (Cr2O3) film was deposited via magnetron sputtering,...
Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures
We explore the transport characteristics of a graphene–MoS2 heterostructure transistor in the low carrier density regime at cryogenic temperatures, specifically between 30 and 50 K. The device exhibit...
Highly oriented and wafer-scale exfoliation of h-BN grown on AlN by metalorganic chemical vapor deposition
Hexagonal boron nitride (h-BN) and aluminum nitride (AlN) are highly suitable for the development of flexible nitride-based ultraviolet devices. However, there are limited reports on the integration o...
An enhancement-mode C-H diamond FET with low work function gate material gadolinia
Enhancement-mode hydrogen-terminated diamond (C-H diamond) field effect transistors (FETs) are strongly desirable for safety protection, energy saving, etc., and low work function gate material is an...
Experiments on unidirectional excitation of designer flexural edge waves
We demonstrate the unidirectional propagation of structure-induced edge waves in a thin plate. These waves, termed designer flexural edge waves (DFEWs), are observed along the free edge of a thin plat...
High endurance and low coercive voltage ferroelectric tunnel junction by electrode engineering
In this paper, we report a high endurance and low coercive voltage (Vc) ferroelectric tunnel junction (FTJ) device by replacing the TiN top electrode with W electrode after annealing. This method impl...
Giant correlation, many body and exciton effects in Janus ferrovalley material H-FeClBr
The family of transition metal dichlorides are recently found to be ferrovalley materials, exhibiting desirable spontaneous valley polarization that is a key to practical applications. In this work, J...
Growth of CdTe films on patterned graphene/Ge (100) by molecular beam epitaxy
Growth on patterned graphene/Ge provides a route to improve the film quality of large mismatch heteroepitaxy and simultaneously facilitate the transfer of epitaxial films; however, the growth process...
Investigation of channel material purity in fully depleted silicon-on-insulator transistors designed for qubit applications
Silicon holds significant potential as a material for future quantum processors. Transistors built in silicon-on-insulator technology and functioning as silicon qubit devices can be fabricated using i...
Enhanced thermoelectric performance by Hf substitution in p-type half-Heusler TiNi0.8Co0.2Sn
The half-Heusler TiNiSn alloy is a promising candidate for thermoelectric power generation, capable of directly converting waste heat into electric power, due to its high thermoelectric performance ov...
Ultrafast quasiparticle relaxation dynamics in the topological materials LaSbTe and CeSbTe
We utilize ultrafast time-resolved pump-probe spectroscopy to investigate photoinduced quasiparticle dynamics in the topological materials LaSbTe and CeSbTe. Our results reveal that the relaxation dyn...
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Charge localization is an important phenomenon that influences various material properties, including excited-state energetics, charge transport, catalytic activity, and recombination. As such, it has...
Voltage-controlled half adder via magnonic inverse design
In this work, we report a magnonic device capable of dynamic control over magnon propagation. By leveraging voltage-controlled magnetic anisotropy on yttrium iron garnet waveguides, we have carried ou...
Erratum: “Room-temperature topological spin textures and magnetic-field-induced skyrmion-bimeron switching in FeSnN3 monolayer” [Appl. Phys. Lett. <b>126</b> , 042401 (2025)]
<b> <i>π</i> </b>/2-periodic planar Hall effect in MnGe thin films
The planar Hall effect (PHE) offers notable advantages in spintronic applications, particularly because of its high signal-to-noise ratio and minimal thermal drift. In this study, we present a tunable...
Ag-doped capsule-like tungsten oxide with controllable band structure and oxygen vacancy for highly efficient triethylamine sensing
The detection and portable monitoring of organic amine is necessary for hazardous substance warning, life, and health. Herein, capsule-like tungsten oxide nanoparticles (NPs) were prepared to detect t...
Heterostructure-induced modulation of optical anisotropy in ReSe2
The precise identification of the optical anisotropy principal axis and the controlled modulation of optical anisotropy in low-dimensional semiconductor materials are critical for advancing polarizati...
Mid-infrared frequency combs and pulse generation based on single section interband cascade lasers
Interband cascade lasers (ICLs) are semiconductor lasers emitting in the mid-wave infrared (MWIR 3–6 μm) and can operate as frequency combs (FCs). These demonstrations are based on double section cavi...
Charge redistribution to reduce contact resistivity in NiSi/Si system through interface modification: A first-principles study
The metal–semiconductor contact resistivity has become a severe challenge for three-dimensional (3D) integration. In this work, starting from the physical origin, we propose that the charge redistribu...
Single-pixel imaging through random media with automated adaptive corrections
The existence of random media is challenging in optical imaging, as the existing approaches usually cannot work well when the optical channel exhibits a certain level of randomness. Here, we report an...
Current-driven motion of magnetic domain wall skyrmions
Domain wall skyrmions (DWSKs) are topological spin textures confined within domain walls that have recently attracted significant attention due to their potential applications in racetrack memory tech...
Long spin-1/2 noble gas coherence times in mm-sized anodically bonded batch-fabricated 3He-129Xe-87Rb cells
As the only stable spin-1/2 noble gas isotopes, 3He and 129Xe are promising systems for inertial rotation sensing and searches for exotic spin couplings. Spin-1/2 noble gases have intrinsic coherence...
Rydberg communication antennas with self-decoupling for dynamic radar interference based on heterodyne technology
The Rydberg atomic communication antenna exhibits exceptional properties superior to traditional antennas. The use of heterodyne technology further establishes a foundation for high-precision digital...
Permittivity and remanent polarization contributions to the electrocaloric effect in (Ba, Sr)TiO3 under unipolar field
The electrocaloric effect (ECE)-induced temperature change (ΔT) in (Ba, Sr)TiO3-based ferroelectrics under unipolar electric fields was analyzed from the separate contributions of the dielectric const...
Synaptic devices based on ferroelectric hafnium oxide: Recent advances, challenges, and future perspectives
Rising demand for artificial intelligence (AI), especially generative AI, is increasingly limited by the so-called von-Neumann bottleneck. Emerging nonvolatile memory devices, e.g., ferroelectric devi...