Applied Physics Letters
Articles in this Issue
Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions
The regulation of tunneling electroresistance (TER) in two-dimensional (2D) ferroelectric tunnel junctions (FTJs) is crucial for their practical applications. In this Letter, we introduce an innovativ...
Ultrafast dynamic mid-infrared beam steering via hot-electron modulation in graphene metasurfaces
Ultrafast dynamic wavefront control is pivotal for advancing photonics applications in LiDAR, high-resolution imaging, and quantum information processing. Conventional wavefront control techniques, su...
Observation of odd–even effect in 1-alcohols through pentapeptide-coated quartz crystal microbalance sensors with molecular docking study
The discrimination between odd and even carbon chain molecules is crucial in detecting odd chain metabolites resulting from impaired biosynthetic processes. However, the discrimination of these metabo...
Nonlinear SU(1,1) interferometers with an on-chip parametric amplifier
SU(1,1) interferometers use two active parametric amplifiers to replace passive beam splitters of traditional interferometers for wave splitting and superposition. These interferometers involve quantu...
Obtaining bulk-like correlated oxide surfaces with protective caps
Functional oxides exhibit a diverse range of correlated electron phenomena, some of which are highly attractive for novel electronic, magnetic, and optical devices. Despite decades of advancement of o...
Investigation of gate conduction mechanisms in p-NiO gate HEMTs with a type-II band aligned NiO/AlGaN heterojunction
In this Letter, the effect of post-metallization annealing (PMA) on the gate conduction mechanisms of p-NiO gate AlGaN/GaN high electron mobility transistors with a NiO/AlGaN type-II band alignment is...
Characterizing the thermo-optic coefficient of gallium phosphide-on-insulator platform using high-quality ring resonators
Characterizing a material's thermo-optic coefficient lays the foundation for optimizing thermal tuning of photonic integrated devices, a key feature for applications in optical communication, sensing,...
Magnetic phase transition, enhanced magnetic anisotropy, and anomalous Hall effect in bilayer FeCl2 with different stacking orders
The controllability of magnetic order and magnetic anisotropy in van der Waals magnets is crucial for 2D spintronic applications. Based on the recent experimental few-layer FeCl2 [Zhou et al., ACS Nan...
Sensitivity enhancement of an anomalous Hall effect magnetic sensor by means of second-order magnetic anisotropy
The sensing performance of anomalous Hall effect (AHE) magnetic sensors is investigated in terms of their sensitivity, the power spectrum of their voltage noise, and their detectivity. Special attenti...
Formation of two-dimensional multichannel vertical optical waveguides in a nitrogen-vacancy center diamond using a femtosecond Bessel beam laser for local quantum sensing
Nitrogen vacancy (NV) centers in diamonds can function as quantum sensors for measuring magnetic fields, temperature, and stress with high sensitivity. They are useful in various biological applicatio...
Atomic-scale insights into microstructural complexity of van der Waals ferroelectric CuInP2S6
The rapid advancement of technology has positioned devices based on two-dimensional materials as a key solution to overcoming the limitations of traditional semiconductor materials. Among these, the f...
Air-aided coherent detection for broadband terahertz wave
Broadband terahertz (THz) waves detection has posed a challenge for the past two decades. In this work, a time domain spectroscopy system for broadband terahertz detection with air serving as the dete...
Research on the motion performance of a magnetic field controlled rice grain microswimmer
Four kinds of ellipsoidal microswimmer are proposed to precisely control the motion direction and velocity at a rotating magnetic field. Five motion behaviors including rolling, swinging, transitional...
Fast non-equilibrium carrier dynamics in polar InGaN/GaN structures with wide quantum wells
We analyze the time-resolved photoluminescence (PL) from the bulklike continuum of excited states of 450 nm emitting InGaN/GaN device structures that are based on wide quantum wells with 25 nm thickne...
Lattice arrangement induced the transition from bipolar to <i>n</i>-type enhancing the spin polarization and the magnetic field dependent dipole effect in organic crystals
The discovery of molecular entities is an effective way to expand and modulate the electronic and spin properties of organic semiconductors. In this work, we have fabricated organic cocrystals with id...
Breakdown-induced directional cracking in kilovolt-class <b> <i>β</i> </b>-Ga2O3 (001) vertical trench Schottky barrier diodes
Breakdown in kilovolt-class β-Ga2O3 (001) vertical Schottky barrier diodes is often observed with material cracking and local delamination along the [010] direction, which coincides with the orientati...
Switchable polarization in 2D antiferromagnetic CuFe2X4 (X<b>=</b>S, Se)
The synthesis of two-dimensional AgCr2S4 has generated significant interest in AM2X4 type non-van der Waals materials. AM2X4 monolayer breaks the central inversion symmetry of the system by intercalat...
Superconducting nanowire single-photon detectors based on amorphous tungsten germanide
In this Letter, we characterized superconducting nanowire single-photon detectors (SNSPDs) based on amorphous tungsten germanide (W0.8Ge0.2) superconducting films, which exhibit superconducting proper...
Biaxial strain engineering of the band structure in atomically thin InSe
InSe emerges as an attractive two-dimensional semiconductor with potential applications in the near-infrared spectral range, featuring strongly layer-dependent direct bandgaps, prominent P-band emissi...
HM-C21: A three-dimensional carbon with abundant p-electron-induced magnetic states for spintronics
Due to their long-distance spin transport and long spin lifetime, p-electron-induced spintronic materials have been attracting increasing attention. As the most common d-electron-free elements, carbon...
Coupling-induced perfect absorption in TMD-based metasurface
Excitons in transition metal dichalcogenides (TMDs) exhibit high oscillator strength and intrinsic losses. This property makes TMD materials favorable for studying light–matter interactions and enhanc...
Nitrogen-vacancy centers with high intrinsic effective fields as probes for electric noise
Characterizing electric field noise in diamond is crucial for utilizing nitrogen-vacancy (NV) centers as probes and qubits. However, NV centers under axial magnetic fields are sensitive to magnetic fi...
900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
The development of high-voltage GaN-on-Si power devices is hindered by vertical breakdown of buffer layer. Implementing a floating substrate configuration could improve vertical breakdown voltage. Des...
Direct measurement of reduced exchange stiffness and its impact on magnetic vortex behavior in PyGd alloys
Thin films composed of sputtered transition metal/rare earth (TM/RE) ferrimagnets have emerged as promising building blocks for future spintronic devices, offering tunable magnetic properties critical...
Synergistic effects of strain and chemical environment on defect engineering in γ-CsPbI3
Intrinsic point defects under lattice strain play a pivotal role in determining the optoelectronic performance of perovskite solar cells. Using the first-principles method, the effects of uniaxial and...