Sliding-driven symmetry breaking induced ferroelectric polarization and phonon property modulation in a <b> <i>β</i> </b>-GaSe bilayer

S Sihan Yan (Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) J Jia-Han Zhang B Bo Li L Lincong Shu (Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) S Shaohui Zhang S Songrui Wei C Chee-Keong Tan (College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,) S Shan Li (Institute of Solid State Chemistry, Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering) Z Zeng Liu (Electronic-Photonic Smart Sensing Device R&D Team, School of Electronic Information Engineering, Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing, Inner Mongolia University 2 , Hohhot 010021,) W Weihua Tang

Abstract

Introducing ferroelectricity through symmetry breaking induces profound changes in the physical properties of a material. This study comprehensively tracks the ferroelectric polarization and phonon property changes resulting from interlayer sliding in a β-GaSe bilayer. The results indicate that sliding the upper layer of the bilayer induces charge transfer, causing polarization accompanied by periodic changes and reversal in non-polarized β-GaSe. Simultaneously, low-frequency optical phonons in polarized structures soften significantly, exhibiting a minimum or rapid decrease accompanied by the maximum value of in-plane polarization. Additionally, the sliding symmetry breaking has complex effects on phonon transport, causing intriguing changes in transport characteristics due to variations in group velocity and linewidth, which are closely related to ferroelectric polarization. This study reveals not only the polarization achieved in the β-GaSe bilayer through sliding-induced symmetry breaking but also its complex effects on phonons and profound physical changes, enriching our understanding of the associated condensed matter physics.

Article Details

Volume / Issue Vol. 126, Issue 11
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

S

Sihan Yan

Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

J

Jia-Han Zhang

B

Bo Li

L

Lincong Shu

Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

S

Shaohui Zhang

S

Songrui Wei

C

Chee-Keong Tan

College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,

S

Shan Li

Institute of Solid State Chemistry, Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering

Z

Zeng Liu

Electronic-Photonic Smart Sensing Device R&D Team, School of Electronic Information Engineering, Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing, Inner Mongolia University 2 , Hohhot 010021,

W

Weihua Tang