Broadband carrier capture dynamics mechanism of carbon-related defects in GaN

Abstract

Fully understanding and modulating the nonlinear absorption in GaN are crucial for designing ultrafast photonic devices. In this work, both the ultra-broadband transient absorption spectra and carrier recombination time in GaN were found to be significantly altered by carbon defects. An energy band model for carbon defect dynamics was established based on transient absorption and photoluminescence spectroscopy. Our model discernibly reveals that CN and tri-carbon in GaN intricately modulate both the absorption spectrum and carrier capture process: The rapid capture of holes by the CN defect significantly reduces the hole recombination time to hundreds of femtoseconds in the near-infrared band. Conversely, the tri-carbon defect exhibited a higher absorption cross section by an order of magnitude than that of free carrier in the visible region with a long carrier recombination time. This work clarifies the modulation mechanisms of complex carbon defects in GaN's nonlinear absorption and provides scientific guidance for designing broadband and integrated ultrafast optical nonlinear devices.