Applied Physics Letters

Vol. 127, Issue 17 Issue 17 2025
57
Articles

Articles in this Issue

Low-temperature electron dephasing rates indicate magnetic disorder in superconducting TiN films

A. I. Lomakin, E. M. Baeva, N. A. Titova et al. Oct 23, 2025 10.1063/5.0286394

We investigate electron transport and phase-breaking processes in thin titanium nitride (TiN) films of epitaxial quality. Previous studies show that a minute surface magnetic disorder significantly re...

Field-tunable low-frequency magnetoelectric antennas for non-line-of-sight communication

Ziye Wang, Yuhang Wang, Jingwen Zheng et al. Oct 23, 2025 10.1063/5.0294065

Acoustically actuated low-frequency magnetoelectric (ME) antennas have been widely concerned and reported in special environments communication, such as underwater, underground, and through wall, owin...

Harnessing persistent magnetism on intermetallic PtCo hard magnets for enhanced hydrogen evolution

Jiaping Teng, Mingyu Sheng, Weilu Kong et al. Oct 23, 2025 10.1063/5.0293885

Magnetoelectrochemistry has emerged as a promising approach for enhancing hydrogen production performance via water electrolysis. However, despite enabling multifunctional control, the inherent struct...

Establishment and modulation of linear VTH model with low interface states using atomic layer etching for E-mode GaN-based P-MOSFETs for digital logic application

Yifan Gao, Ling Yang, Qing Zhu et al. Oct 23, 2025 10.1063/5.0282612

In this work, the modulation effect of low interface states for threshold voltage (VTH) model of GaN-based p-channel metal-oxide-semiconductor field effect transistors (P-MOSFETs) is investigated. By...

Absorption anisotropy of orthorhombic single-domain κ-Ga2O3 from infrared to ultraviolet: Phonons and bandgaps

Elias Kluth, Temma Ogawa, Hiroyuki Nishinaka et al. Oct 23, 2025 10.1063/5.0302622

We present the anisotropic dielectric functions and absorption coefficients of orthorhombic single-domain (001) κ-Ga2O3. Single-domain κ-Ga2O3 grown by mist chemical vapor deposition on ε-GaFeO3 was i...

Reverse current suppression of p-GaN diode using SiOx interlayer

Zixian Jiang, Zhiyuan Liu, Tingang Liu et al. Oct 23, 2025 10.1063/5.0288550

p-GaN diodes exhibit large reverse currents due to poor Schottky contacts between p-GaN and metal, which hinders their application in environmentally robust power systems and GaN complementary metal–o...

Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering

Yoshitaka Shingaya, Daiki Nishioka, Kazuya Terabe et al. Oct 23, 2025 10.1063/5.0266816

Reservoir computing (RC) is promising for achieving low power consumption neuromorphic devices. In this study, we developed an all-solid-state electric double layer transistor using multilayer MoS2 to...

Growth and probing the band-to-impurity transitions in oxygen-doped h-BN

Z. Alemoush, M. Almohammad, J. Li et al. Oct 23, 2025 10.1063/5.0284827

Intentionally oxygen-doped hexagonal boron nitride (h-BN) thick epilayers have been produced using hydride vapor phase epitaxy (HVPE). Oxygen doping significantly enhanced the crystalline quality of h...

Energetic comparison of rotation and translation processes in magnetic refrigeration

H. B. de Souza, R. Kiefe, J. S. Amaral Oct 23, 2025 10.1063/5.0292743

Conventional magnetic refrigeration relies on removing a magnetic refrigerant from a magnetic field to induce demagnetization and an adiabatic change in temperature. An emerging alternative, the demag...

Giant elastocaloric effect in V-doped Ni–Mn–In alloys

Chao Wang, Honglin Wang, Hongwei Liu et al. Oct 23, 2025 10.1063/5.0300648

Solid state elastocaloric refrigeration exploits the elastocaloric effect in shape memory alloys to achieve cooling, primarily depending on the entropy change of martensitic transformation (ΔStr). In...

Self-powered EA4Pb3Br10 ferroelectric perovskite photodetector for single-pixel imaging and encrypted optical communication

Qingwen Meng, Ning Sui, Ziying Yang et al. Oct 23, 2025 10.1063/5.0300380

We developed a transverse photodetector using EA4Pb3Br10 films that demonstrates excellent self-powered performance: a responsivity (R) of 0.11 A W−1 and a detectivity (D*) of 1.41 × 109 Jones. At 3.0...

Effects of Al contents on the electrical performance and low-frequency noise properties of InAlZnO thin-film transistors

Genglong Zhao, Ablat Abliz Oct 23, 2025 10.1063/5.0293617

This study investigates the effect of aluminum (Al) content on the electrical performance and low-frequency noise (LFN) characteristics of InAlZnO (IAZO) thin-film transistors (TFTs). Furthermore, the...

Revealing the size dependence on point field emitter emission beam through continuous work function and atomic precise electric field

Shuai Tang, Mingkai Gou, Yingzhou Hu et al. Oct 23, 2025 10.1063/5.0291687

Nowadays, the nano/atomic-scale field emitters have shown convergent single electron beam, demonstrating an ultra-high brightness beneficial for high signal-to-noise ratio and high throughput for appl...

Regulating the spin configuration of FeNC catalysts with CeO2 to enhance their activity and stability in PEMFCs

Chengjie Chen, Ruizhong Chen, Dengke Zhang et al. Oct 23, 2025 10.1063/5.0293234

The application of FeNC catalysts has been hindered by their instability due to the demetalization of the active sites and attacks by H2O2 and superoxide radicals. In this work, CeO2 was introduced in...

Ratio-induced competition between energy and charge transfer in InP/ZnS quantum dots: A color-converting and high-performance LED

Bo Li, Yangdi Wang, Kexue Li et al. Oct 23, 2025 10.1063/5.0302093

Understanding how semiconductor quantum dots (QDs) participate in photoinduced fluorescence resonance energy transfer (FRET) and charge transfer (CT) is essential for enhancing the performance of ligh...

Janus flexible electrode with built-in electric field for high-performance Li–S batteries

Tianlong Lan, Shunxian Yu, Junliang Xu et al. Oct 23, 2025 10.1063/5.0290089

Lithium–sulfur batteries (LSBs) hold substantial potential for high-density energy storage systems, attributed to their high energy density and low cost. However, the widespread adoption of LSBs is si...

Direct observation of slow transient response of photovoltage for carrier dynamics in Cu(In,Ga)Se2 via surface photovoltage measurement

Kana Ueda, Thomas Fix, Mutsumi Sugiyama Oct 23, 2025 10.1063/5.0282041

A direct investigation of the carrier generation and slow transient mechanism related to the photovoltage characteristics of Cu(In,Ga)Se2 (CIGS) was conducted using the transient surface photovoltage...

Identifying core–shell pseudo-single-crystals in MoS2 monolayers via visible light dark-field microscopy imaging

Yiming Hao, Man Wang, Guanting Liu et al. Oct 23, 2025 10.1063/5.0287833

Synthetic molybdenum disulfide (MoS2) with uniform electrical properties has emerged as a promising semiconductor in the advanced 2D transistor and integrated circuit (IC) processes. Focusing on the c...

Insights into the effect of graphene on Cu electrical conductivity: Experimental investigations of Cu foil coated with graphene

Naifu Shen, Chongyang Cheng, Baishan Liu et al. Oct 23, 2025 10.1063/5.0291229

Cu foil is one of the key engineering materials with extensive applications in microelectronics and energy storage systems, with high electrical conductivity being crucial to device performance and en...

Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates

Liubou Padzialioshkina, Arno Kirchbrücher, Qi Shu et al. Oct 23, 2025 10.1063/5.0299401

N-polar GaN heterostructure field-effect transistors (HFETs) promise performance and scaling advantages over conventional Ga-polar GaN-based devices for high-frequency applications. However, N-polar G...

Controlled thinning of aligned single-wall carbon nanotube films by multiple exfoliation

Shigeki Saito, Jacques Doumani, Satoshi Kusaba et al. Oct 23, 2025 10.1063/5.0293759

Achieving macroscopic alignment of single-wall carbon nanotubes (SWCNTs) is pivotal for unlocking their full potential in high-performance optoelectronic devices, nonlinear optical platforms, and chir...

Active venting mechanisms for accurate heat transfer measurement during steam dropwise condensation

Wentao Yang, Tarandeep Singh Thukral, Ghassan Arissi et al. Oct 23, 2025 10.1063/5.0294318

The presence of non-condensable gases (NCGs) can significantly affect condensation heat transfer by creating a vapor-diffusion barrier near the condensing surface. While quantitative analysis of conde...

1D YIG hole-based magnonic nanocrystal

K. O. Levchenko, K. Davídková, R. O. Serha et al. Oct 23, 2025 10.1063/5.0285098

Magnetic media with artificial periodic modulation—magnonic crystals (MCs)—enable tunable spin-wave dynamics and band structure engineering. Nanoscaling enhances these capabilities, making magnonic na...

Generation of non-diffractive terahertz Bessel beams using 3D printed spiral zone plates

Kevin K. Mutai, Chloe Stults, Zhaoji Fang et al. Oct 23, 2025 10.1063/5.0302852

Due to their unique non-diffracting properties, Bessel beams have been studied across microwave to optical frequency regimes. Although several schemes for generating Bessel beams at microwave and tera...

Electromer formation in a diamine derivative under optical excitation: Experimental evidence

Shaofeng Chen, Chang Zhu, Yanfei Lü et al. Oct 23, 2025 10.1063/5.0291131

The spectral disparity observed under electroluminescence and photoluminescence in organic semiconductors is attributed to the electromer formation. 1,1-Bis((di-4-tolylamino)phenyl)cyclohexane (TAPC),...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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