Applied Physics Letters

Vol. 126, Issue 1 Issue 1 2025
78
Articles

Articles in this Issue

Determining the optical and polaritonic properties of isotopically pure hBN using cryogenic FTIR micro-spectroscopy

Siddharth Nandanwar, Aditya Desai, S. Maryam Vaghefi Esfidani et al. Jan 06, 2025 10.1063/5.0248232

van der Waals materials support numerous exotic polaritonic phenomena originating from their layered structures and associated vibrational and electronic properties. However, many van der Waals materi...

Ferroelectric polarizations engineered reversible skyrmion–bimeron switch in van der Waals heterostructure RuClBr/Ga2S3

Yong Lei, Wei Sun, Xianghong Niu et al. Jan 06, 2025 10.1063/5.0242362

Controllable operation between different magnetic topological states, such as skyrmions and bimerons, which share the same topological charge but exhibit distinct properties, has garnered extensive at...

An optically transparent rectifying metasurface for 2.4/5.8 GHz dual-band RF energy harvesting

Lin Dong, Liming Si, Boyang Liu et al. Jan 06, 2025 10.1063/5.0242451

In this paper, an optically transparent rectifying metasurface system (RMS) is designed and validated for simultaneously harvesting radio frequency (RF) energy while enabling the efficient transmissio...

Formation of high-quality SiO2/<i>β</i>-Ga2O3(001) MOS structures: The role of post-deposition annealing

Takuma Kobayashi, Kensei Maeda, Masahiro Hara et al. Jan 06, 2025 10.1063/5.0245289

We investigated the effect of post-deposition annealing on the electrical characteristics of SiO2/β-Ga2O3(001) MOS structures. While oxygen annealing effectively improves the interface properties, it...

Fragmented charged domain wall below the tetragonal-orthorhombic phase transition in BaTiO3

Petr S. Bednyakov, Iegor Rafalovskyi, Jiří Hlinka Jan 06, 2025 10.1063/5.0247479

Ferroelectric charged domain walls are known for their high electrical conductivity, making them promising candidates for modern electronics. A remarkably high conductivity and nominal charge density...

High-performance mid-infrared plasmonic bispectral routers by inverse design

Xuanxuan Li, Huayou Liu, Shiyu Yang et al. Jan 06, 2025 10.1063/5.0241943

In modern imaging systems, the application of multispectral imaging technologies is pervasive, furnishing an enhanced spectrum of information. Multispectral methods typically employ arrays of filters...

A dual-biomimetic surface with leaf-skeleton-based hierarchical structures for efficient atmospheric water harvesting

Qiyu Chen, Fabian Javier Medina, Qing Hao Jan 06, 2025 10.1063/5.0235697

Atmospheric water harvesting (AWH) has been extensively researched as a sustainable solution to current freshwater scarcity. Various bioinspired AWH surfaces have been developed to enhance water-harve...

Rb 2 Ti 2 O 5 : A layered ionic conductor at the sub-micrometer scale

Valerio Digiorgio, Karen Sobnath, Maria Luisa Della Rocca et al. Jan 06, 2025 10.1063/5.0225828

Over the past few years, ionic conductors have gained a lot of attention because of the possibility of implementing them in various applications such as supercapacitors, batteries or fuel cells, and r...

Single resonant cavity enhances the second harmonic generation of layered ferroelectric NbOCl2

Mengyuan Jia, Junyang Chen, Xiaohua Wu et al. Jan 06, 2025 10.1063/5.0246745

Second harmonic generation (SHG) is a common nonlinear optical process with wide applications. Recent studies have found that the van der Waals crystal material NbOCl2 has a high efficiency in SHG, an...

A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity

Heyuan Chen, Tao Zhang, Huake Su et al. Jan 06, 2025 10.1063/5.0248171

In this work, a high-performance AlGaN-channel Schottky barrier diode with high breakdown voltage of 2.23 kV defined at anode leakage current of 1 μA and high power figure-of-merit of 614 MW/cm2 is de...

Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures

Xiaozhuang Lu, Qingbin Liu, Cui Yu et al. Jan 06, 2025 10.1063/5.0236087

With the miniaturization of electronic devices, thermal management has become a critical challenge, especially for high-power systems where efficient heat dissipation is essential. Polycrystalline dia...

Ghost imaging through complex scattering media with random light disturbance

Yang Peng, Wen Chen Jan 06, 2025 10.1063/5.0252090

Imaging in a complex environment is recognized to be challenging in various applications. Imaging with single-pixel detection, e.g., ghost imaging (GI), emerges as a solution in recent years. Here, we...

Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions

HongYuan Zhao, Jiangni Yun, Linwei Yao et al. Jan 06, 2025 10.1063/5.0242551

To develop low-power, miniature, nonvolatile memory resistor integrated devices for in-memory computing technologies, the exploration of atomic-scale ferroelectric channel semiconductor devices is nec...

Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type

Simon Litschgi, Amélie Dussaigne, Frédéric Barbier et al. Jan 06, 2025 10.1063/5.0219902

In InGaN/GaN micro-light-emitting diodes (μLEDs), the size-dependent efficiency loss is commonly attributed to carrier diffusion within quantum wells (QWs). When the μLED size is sufficiently small, c...

Effect of doping in small-size hybrid nanostructures for plasmonic catalysis

Igor V. Smetanin, Alexander V. Uskov, Nikolay V. Nikonorov Jan 06, 2025 10.1063/5.0228172

The effect of doping on the lowest quantum state of hot electron trapped in the semiconductor shell of small size hybrid nanoparticles is investigated. Assuming a spherical Ag-AgBr hybrid nanoparticle...

Ultrafast manipulation of Néel-type merons using electric field pulses

Jiyong Kang, Dongxing Yu, Yaojin Li et al. Jan 06, 2025 10.1063/5.0235596

A nanoscale meron, as a type of topological magnetic soliton with half topological charge, can function as a quantum mechanical object whose core spin (polarity) represents the qubit states |0⟩ and |1...

Tunneling effect in quantum-dot light-emitting diodes

Rongmei Yu, Jinbing Cheng, Yingying Lu et al. Jan 06, 2025 10.1063/5.0246824

Charge carrier transportation in semiconductor films is a fundamental but crucial process for the light-emitting diodes. Although there have been many studies on charge transport properties of devices...

Theoretical analysis of thermal conductivities of water and heavy water based on thermal resistance network model

Sijing Sun, Qingxuan Wang, Saqlain Raza et al. Jan 06, 2025 10.1063/5.0239480

Thermal conductivity of liquid water is distinct from that of ordinary liquids due to its complex hydrogen bonding network. In this study, we develop the thermal resistance network model, supplemented...

The characteristics of line-shaped defects and their impact mechanism on device performance in <i>β</i>-Ga2O3 Schottky barrier diodes

Jinyang Liu, Song He, Guangwei Xu et al. Jan 06, 2025 10.1063/5.0244107

Beta-phase gallium oxide (β-Ga2O3) has attracted increasing attention in the field of power electronic devices due to its ultra-wide bandgap and high Baliga figure-of-merit. However, the premature bre...

Ferromagnetic permalloy/<i>p</i>-type boron-doped diamond Schottky barrier diodes

Makoto Kawano, Carlos Cunha, Kazuyuki Hirama et al. Jan 06, 2025 10.1063/5.0234753

Ferromagnetic permalloy/p-type boron (B)-doped diamond Schottky barrier diodes (SBDs) were demonstrated. The SBDs showed a clear rectifying behavior with a high on/off ratio of over 109 and an idealit...

Topological sonic whispering gallery protected by the synthetic Weyl points

Zhennan Wang, Zixin Huang, Chengxin Deng et al. Jan 06, 2025 10.1063/5.0242798

The synthetic dimension provides us with a powerful platform to explore the topological properties of matter. In this paper, we choose two physical dimensions (kx and ky) and one geometric structure p...

Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfOx memristors

Yuanyuan Zhu, Yufei Zhang, Shuning Yang et al. Jan 06, 2025 10.1063/5.0240368

Hafnium oxide (HfOx) films are highly valued as functional layers in nonvolatile resistive switching (RS) memristors due to their scalability, compatibility with CMOS technology, and high dielectric c...

Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and <i>in situ</i> O3 treatment

Fangzhou Du, Yang Jiang, Peiran Wang et al. Jan 06, 2025 10.1063/5.0232630

In this study, high-performance InAlN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are fabricated using HfAlOx-based charge-trapping layer dielectric stack combined...

Heteroatomic doping induces charge rearrangement to optimize carrier dynamics in 2D halide perovskites

Jixiang Zhou, Jing Yang, Xueke Yu et al. Jan 06, 2025 10.1063/5.0239895

It is well established that a number of techniques, including applied electric fields, interfacial engineering, structural torsion, and doping, can modulate the geometric and electronic structures of...

Hydrogen-mediated control of magnetic anisotropy and magnetic domain structure in Co/Pd multilayer

Yan-Ru Chu, Xi-Wei Lu, Chun-Tse Hsieh et al. Jan 06, 2025 10.1063/5.0242410

This study demonstrates the reversible transition from perpendicular to in-plane magnetic anisotropy in Co/Pd multilayers induced by hydrogenation, using a magneto-optic Kerr microscope. By controllin...

All Issues

Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
View Full Journal Page