Applied Physics Letters

Vol. 126, Issue 20 Issue 20 2025
58
Articles

Articles in this Issue

Surface-enhanced Raman scattering on two-dimensional Nb2CTX MXene

Mackenzie Songsart-Power, Brady Wilson, Joseph W. Phalen et al. May 19, 2025 10.1063/5.0262640

MXenes have garnered significant attention for surface-enhanced Raman scattering (SERS) applications due to their exceptional electronic properties and remarkable hydrophilicity. However, niobium carb...

Experimental demonstrations of Josephson threshold detectors for broadband microwave photons detection

Jia-Xing He, Peng-Hui Ouyang, Ya-Qiang Chai et al. May 19, 2025 10.1063/5.0259463

In this Letter, we experimentally demonstrated that Josephson threshold detectors (JTDs) could be developed to implement the sensitive detection of broadband microwave photons. Beginning with the nume...

Machine learning coupled highly sensitive and robust polyvinylidene fluoride thin-film sensor for wearable motion recognition

Qiaobang Xiang, Haofeng Qiu, Duo Yang et al. May 19, 2025 10.1063/5.0261792

Emerging applications in the field of health monitoring and exoskeleton robotics have led to an urgent demand for high-performance body motion recognition. However, the available motion recognition sy...

Modal gain tailoring by flat stamping of thin colloidal films

Ruslan Azizov, Jinlong Zhu, Pavel Talianov et al. May 19, 2025 10.1063/5.0266347

Post-synthetic tailoring and improvement of the light-emitting material properties is an important direction for optimization of solution processible LEDs and recently emerged laser diodes based on na...

Time-domain modeling of nonlinear counter-propagating wave dynamics in reflective microring resonators

Jean-Michel Vallée, Wei Shi May 19, 2025 10.1063/5.0261147

We present a one-dimensional finite-difference time-domain model that analyzes nonlinear counter-propagating wave dynamics in reflective microring resonators for integrated microcomb generation. The p...

High thermoelectric performance of monolayer Janus Zn<i>AX</i>Te (A = Ge, Sn; X = S, Se) induced by large band degeneracy and low lattice thermal conductivity

Haomai Yang, Changhao Ding, Zhifu Duan et al. May 19, 2025 10.1063/5.0264169

Thermoelectric conversion is a crucial approach to addressing waste heat utilization and energy challenges in the 21st century. Enhancing the thermoelectric figure of merit (ZT) has become a central f...

Impact of qubit anharmonicity on near-resonant Rabi oscillations

Grigoriy S. Mazhorin, Andrei A. Kugut, Artyom M. Polyanskiy et al. May 19, 2025 10.1063/5.0263783

Precise quantum control relies on a deep understanding of the dynamics of quantum systems under external drives. This study investigates the impact of anharmonicity on qubit dynamics under conditions...

Utilization of silicon optical coatings for transverse-mode suppression in high-power oxide-confined vertical-cavity surface-emitting lasers

Kevin P. Pikul, Patrick Su, Mark D. Kraman et al. May 19, 2025 10.1063/5.0260091

Engineering of the electric-field standing-wave pattern of oxide-confined vertical-cavity surface-emitting lasers (VCSELs) via a scalable, high-refractive-index silicon optical coating is demonstrated...

Combining the magnetocaloric effect and barocaloric effect in low-cost Mn0.43−xNi0.77+xFe0.8Si intermetallics with broad refrigeration temperature region

Tao Wang, Haicheng Xuan, Minjie Ji et al. May 19, 2025 10.1063/5.0271853

Solid-state refrigeration utilizing the caloric effects has been envisioned as an effective and environmentally friendly technology. In this work, we report low-cost Mn0.43−xNi0.77+xFe0.8Si (x = 0, 0....

Annealing effects on crystalline quality and device performance of ultrawide bandgap h-BN quasi-bulk crystals

N. K. Hossain, G. Somasundaram, Z. Alemoush et al. May 19, 2025 10.1063/5.0260647

Hexagonal boron nitride (h-BN) is a notable member of ultrawide bandgap semiconductors, distinguished by its unique layered crystalline structure and exceptional electrical and optical properties. One...

AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers

Masanobu Hiroki, Kazuyuki Hirama, Kazuhide Kumakura et al. May 19, 2025 10.1063/5.0268213

We propose AlN-based polarization-doped field-effect transistors (PolFETs) with upward-graded AlxGa1−xN channel layers combined with downward-graded AlGaN underlayers (ULs). In a structure where the c...

Spin-torque ferromagnetic resonance for complex signal extraction with tunable linewidth

Xiaojing Wu, Ruiyu Wang, Xinyue Zhu et al. May 19, 2025 10.1063/5.0252818

The signal of spin-torque ferromagnetic resonance (ST-FMR) primarily consists of microwave absorption resonance in the ferromagnetic layer and spin–orbit torque (SOT) absorption resonance, with SOT ef...

Multi-band wavefront attenuation leveraging temporal modulation of metasurface via reconfigurable and scalable design

Joshua Dupont, Ting Wang, Richard Christenson et al. May 19, 2025 10.1063/5.0265628

Practical realization of multi-band resonant piezoelectric metasurfaces remains challenging, conventionally requiring graded subunits, multi-branch circuitry, digital switching, or active control. As...

Toward heralded single-photon storage via chiral cavity-enhanced spontaneous Raman scattering

Can Sun, Yibo Hou, Xiang Chen et al. May 19, 2025 10.1063/5.0259783

We propose a scheme of heralded storages of single photons via spontaneous Raman scattering (SRS) enhanced by a chiral standing-wave cavity, which creates a non-classically correlated pair of a spin w...

Reconfigurable multifunctional acoustic metagratings enabled by local phase harnessing

Yu Chen, Jiaqi Quan, Yue Gao et al. May 19, 2025 10.1063/5.0252106

Metasurfaces and metagratings show significant potential in revolutionizing acoustic devices, with applications spanning areas such as structural health monitoring and communication. Nevertheless, mos...

Impact of oxygen vacancy-gradient surface layer on the electrostrain of Sb3+ doped BNKST ceramics

Jianhui Jia, Pengrong Ren, Kexuan Zhao May 19, 2025 10.1063/5.0271329

Recently, ultra-large electrostrain exceeding 1% has been observed in various thin ferroelectric ceramics, generating a significant research interest. However, the underlying mechanisms remain controv...

Symmetry breaking induced nonrelativistic spin splitting and spontaneous valley polarization in altermagnetic Ca(CoN)2 bilayer

Hui Zeng, Weijie Zhang, Chengyu Qiu et al. May 19, 2025 10.1063/5.0259036

Two-dimensional altermagnet (AM) has attracted extensive attention due to its intriguing nonrelativistic spin-splitting combined with compensated magnetism. The manipulation of spin-splitting and vall...

Qubit properties of antisite defects in ZnSe

Yifeng Wu, Kelsey J. Mirrielees, Douglas L. Irving May 19, 2025 10.1063/5.0265591

Antisite defects in ZnSe, ZnSe and SeZn in the neutral and +1 charge states, are found to possess some favorable attributes to be spin-based qubits. Systematic density functional theory calculations u...

<i>In situ</i> measurement of AlxGa1−xAs growth rate and composition by magnification inferred curvature method

K. Ben Saddik, G. Almuneau, B. Reig et al. May 19, 2025 10.1063/5.0268846

The direct in situ measurement of group-III element growth rates in epitaxial methods has been a continuous pursuit. Despite the development of numerous in situ monitoring tools, the accurate measurem...

High hydrogen storage capacity and reversible storage/release mechanism of the BC2N monolayers via charge modulation

Wentao Guo, Wenbin Chen, Zhiyong Liu et al. May 19, 2025 10.1063/5.0253386

Although hydrogen is an effective alternative energy source to fossil fuels, its storage is a challenge for extensive applications. The hydrogen storage performance and mechanism of the BC2N monolayer...

Coexistence of superconductivity and topological phase in kagome metals CsTi3Te3X2 (X = Bi, Sb, Se, Sn): A first-principles investigation

Boxun Han, Hong Zhang May 19, 2025 10.1063/5.0260449

The AV3Sb5-prototype (A = K, Rb, Cs) kagome materials have garnered significant research interest owing to their diverse properties. Most studies have primarily concentrated on the kagome layers, negl...

Demonstration of a GaN-based P-channel FinFET with high current density based on multi-channel structure

Xu Liu, Shengrui Xu, Tao Zhang et al. May 19, 2025 10.1063/5.0258789

In this work, we report a p-GaN/u-GaN/AlGaN multi-channel structure using δ-doping. The multi-channel structure exhibits a low sheet resistance of 12.9 kΩ/sq. The AlGaN/GaN/AlGaN sandwich structure re...

VRP-LiDAR: A compact full-Stokes polarimetric LiDAR utilizing vortex retarders

Kaihua Zhao, Haonan Shi, Weijun Meng et al. May 19, 2025 10.1063/5.0262583

Full-polarization light detection and ranging (LiDAR) is a powerful remote sensing technology that provides comprehensive information about object distance, material properties, surface texture, and o...

Unconventional temperature evolution of quantum oscillations in Sn-doped Bi1.1Sb0.9Te2S topological insulator

Bruno Gudac, Petar Sačer, Filip Orbanić et al. May 19, 2025 10.1063/5.0271389

Among various topological insulators, Sn-doped Bi1.1Sb0.9Te2S stands out for its exceptional properties. It has a wide energy gap and typically exhibits a well-isolated Dirac point and a Fermi level p...

Optomechanical thermal effect of nanofilm by time-correlated single-photon counting

Hui Wu, Guangyu Li, Zhe He May 19, 2025 10.1063/5.0257450

Optomechanical sensing enables non-contact measurement of vibrational noise in nanofilms. While the quantitative thermal response of nanofilms is not fully understood, we investigated the temperature-...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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