Applied Physics Letters
Articles in this Issue
Coexistence of Dirac nodal loops and triply degenerate nodal points in three-dimensional interpenetrated <i>α</i>-graphyne
Recently, constructing three-dimensional materials through two-dimensional materials is attracting research attention in both experiment and theory due to the properties beyond ordinary 3D materials....
Dynamic susceptibility of eccentric nanorings
Magnetic nanorings have potential applications in devices based on spintronics concepts. In this work, through micromagnetic simulations, we analyze the impact of changes in the size and position of t...
Quantification of the ionic migration rates in thick CsPbBr3 films revealed by operando x-ray fluorescence
Bulk CsPbBr3 is an emerging semiconductor that has shown unprecedented increase in performance over the last decade for optoelectronic applications. However, further development of devices based on Cs...
Flexible thermal interface materials based on diamond–graphene composite films prepared at different temperatures
Diamond and graphene, which have extremely high thermal conductivity, are considered ideal candidates for the preparation of high-performance thermal interface materials (TIMs). However, the developme...
In3SbTe2-based all-season smart film with synergistic modulation of solar and thermal radiation
The reversible transformation of radiative cooling and solar heating of the film is significant for a building's energy conservation and carbon emission reduction. The current technology is constraine...
Effect of core–shell structure on magnetic properties and subsequent grain boundary diffusion in the Ce-rich dual main phase magnets
Dual-main-phase (DMP) magnets, a promising approach for the efficient utilization of high-abundance rare earth elements, exhibit enhanced coercivity compared to single-main-phase (SMP) magnets. This s...
Infrared upconversion detection based on two-dimensional material/silicon tunable metasurface heterostructures for telecommunication
We introduce a heterostructure integrating a two-dimensional nonlinear GaSe film on a silicon metasurface supporting quasi-bound states in the continuum (BIC) mode, to enhance the nonlinear sum-freque...
Skyrmion deformation under the antiferromagnetic system
A magnetic skyrmion exhibits topological protection property, making it a highly promising candidate as an information carrier in spintronic devices. However, this information carrier may face deforma...
Enhanced figure-of-merit and fatigue resistance of strontium barium niobate for pyroelectric energy conversion
Pyroelectric energy conversion shows potential for low-grade waste heat harvesting. In this work, we design and investigate the SrxBa1−xNb2O6 material at x = 0.6 (SBN60), focusing on the role of oxyge...
Enhanced nonlinear optical response in GeSe-based multilayer structure
GeSe, an emerging two-dimensional material, exhibits a significant potential in nonlinear optics. This study explores an effective method to enhance the nonlinear optical properties of GeSe through th...
Toward roll-to-roll ALD of thermoelectric Al-doped ZnO thin films on flexible nanostructured PET membranes
Thin films are an effective way of manufacturing thermoelectric (TE) sensors for biomedical devices and wearable electronics. Excellent conformality and sub-nanometer thickness control of atomic layer...
Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy
Roles of Al-vacancy (VAl) complexes on the cathodoluminescence (CL) spectra of Si-doped AlN grown by halide vapor phase epitaxy (HVPE) on a physical-vapor-transported (0001) AlN substrate are describe...
Tunable spin/valley splitting and multiple Hall effects in interlayer coupling-dependent SVSiN2 multiferroic bilayers
Compared to two-dimensional (2D) monolayered ferrovalley semiconductors (FVS), 2D FVS bilayers with interlayer coupling are more sensitive to external electric fields, and their applications for valle...
Coexistence of ferroelectricity and ferromagnetism in fluorine-doped barium titanate at room temperature
Barium titanate (BaTiO3, BTO) is considered to be a typical room temperature ferroelectric. We have fabricated fluorinated BTO (BTOF) polycrystalline ceramics by using NH4F as doping compounds, in whi...
Determination of the B4-B1 phase boundary in semiconductors using isothermal compression Raman spectroscopy
The pressure-induced phase transition from hexagonal wurtzite (B4) to cubic rock salt (B1) in semiconductors is generally identified as an important displacement-type structural transition. Despite th...
Surface-driven structural evolution and electronic transition of SbSe chains on Au(111)
Low-dimensional materials have attracted significant attention due to their unique physical properties and broad potential applications. Antimony selenide is well known for its thermoelectric properti...
Ambient pressure-induced domain engineering in suspended CuInP2S6 membrane
The flexoelectric effect, which couples strain gradients to electric polarization, provides a promising method for ferroelectric domain engineering without the need for external electric fields. Apply...
High-temperature N ion implantation for performance-enhanced current-blocking layers in <i>β</i>-Ga2O3
This work reveals the significant advantages of high-temperature nitrogen (N) ion implantation for fabricating current-blocking layers (CBLs) in β-Ga2O3. A comparative investigation on the structural...
Epitaxial high-K barrier AlBN/GaN HEMTs
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier Al...
Amorphous In2O3 FeFET-like devices by interface dipoles
Counterclockwise (CCW) hysteresis with a memory window (MW) of 2.4 V is observed in amorphous indium oxide (a-In2O3) thin-film transistors with silicon oxide (SiOX) gate insulator (40 nm). This CCW ph...
Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots
Semiconductor quantum dots (QDs) are nanostructures that can enhance the performance of electronic devices due to their 3D quantization. Typically, heterovalent impurities, or dopants, are added to se...
Magnetic bound states embedded in tantalum superconducting thin films
In the fabrication of superconducting devices, both in situ and ex situ processes are utilized, making the removal of unwanted oxide layers and impurities under vacuum conditions crucial. Oxygen descu...
Electrically tunable nonvolatile 2D van der Waals p–n heterostructures based on GeSe-quasi 2D electron gas on the SrTiO3 surface
Theoretical modulation of the current rectification ratio and turn-on voltage of p–n diodes by selecting semiconductor materials with appropriate Fermi levels remains challenging in practice. Key obst...
Inverse design of high-performance piezoelectric semiconductors via advanced crystal representation and large language models
The inverse design of solid-state materials with targeted properties represents a significant challenge in materials science, particularly for piezoelectric semiconductors where both structural symmet...
Influence of temperature on the avalanche dynamics of ferroelectric domain switching in barium titanate single crystals
This study investigates the avalanche dynamics of ferroelectric domain switching in barium titanate single crystals across a range of temperatures using acoustic emission techniques. Ferroelectric dom...