Applied Physics Letters
Articles in this Issue
Line width narrowing of superconducting nanowire single photon detectors using atomic layer etching
Superconducting nanowire single photon detectors (SNSPDs) have shown remarkable photon detection characteristics, and scalable architectures allow for the fabrication of SNSPD cameras with over a hund...
Near-field enhanced solid-state thermionic power generation
The lack of low-work function materials and the negative space charge effect have long prevented vacuum thermionic energy converters (VTECs) from becoming a practical means of power generation. Advanc...
The competition between van der Waals and ionic interactions at the SrTiO3/mica heterointerface
Growing a 3D film on a 2D substrate, a process often referred to as quasi-van der Waals (vdW) epitaxy, is generally believed to involve both chemical and vdW interactions at the interface. To date, th...
Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography
We demonstrate the application of atom probe tomography for assessing the crystalline orientation of nanoscale semiconductor structures via the analysis of charge state ratio maps in the detector spac...
Mechanically robust wrinkled liquid marbles
Liquid marble (LM) is a droplet covered with jammed low-wettability fine particles, which exhibits non-sticking to contacting media while keeping its fluid reconfigurability. While the LM facilitated...
Unconventional spin-to-charge conversion in MnPd3
We demonstrate the unconventional and conventional spin-to-charge conversion (SCC) in MnPd3 using local SCC device at room temperature. The low crystal symmetry along the (114) growth direction allows...
Improved device performance in <i>in situ</i> SiNx/AlN/GaN MIS-HEMTs with <i>ex situ</i> Al2O3 passivation at elevated temperatures
In the present work, the role of ex situ Al2O3 passivation in in situ SiNx/AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) to boost device performance and thermal...
Observation of electronic and structural transitions in two-dimensional ferroelastic semiconductor of Nb2GeTe4 via pressure manipulation
Nb2GeTe4, a two-dimensional ferroelastic semiconductor, has garnered intense research interest due to its nontrivial physicochemical characteristics of high carrier mobility as well as extraordinary f...