Applied Physics Letters

Vol. 126, Issue 15 Issue 15 2025
47
Articles

Articles in this Issue

Modifications in the charge trap landscape in Hf0.5Zr0.5O2 as a function of oxygen vacancy concentration observed with photoemission electron microscopy

Fernando Vega, Alex Boehm, Andrew R. Kim et al. Apr 14, 2025 10.1063/5.0252406

Oxygen vacancies in HfxZr(1−x)O2 (HZO) both contribute to stabilization of the ferroelectric orthorhombic phase and promote leakage pathways that limit the endurance of devices based on the material....

Inter-frequency all-optical transfer of structured light information in Rb vapor based on spatial cross-phase modulation

Junfei Chen, Zhiping Wang, Hamid R. Hamedi et al. Apr 14, 2025 10.1063/5.0256568

High-dimensional all-optical information transfer facilitates large-capacity, high-speed, and energy-efficient optical communication, playing a pivotal role in advancing modern photonic technologies....

Schottky barrier formation and band realignment of rare-earth tritelluride charge density wave material–semiconductor interfaces

Kentaro Yumigeta, Jan Kopaczek, Rounak Banerjee et al. Apr 14, 2025 10.1063/5.0253262

We investigated the formation of Schottky barriers at the interface between rare-earth tritelluride (RTe3) crystals and n-type silicon (n-Si) substrates. This study explores the rectifying characteris...

Magnetic field induced arrested state in TbMn6Sn6

Tamali Roy, Prasanta Chowdhury, Mohamad Numan et al. Apr 14, 2025 10.1063/5.0251511

The quasi-two-dimensional kagome ferrimagnet TbMn6Sn6 is investigated for thermo-remanent magnetization and Hall effects. Upon cooling under a moderate magnetic field, the sample attains a magnetizati...

Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment

Shubo Wei, Zifan Hong, Chengchao Li et al. Apr 14, 2025 10.1063/5.0254888

We demonstrate a significant improvement in the breakdown voltage of vertical β-Ga2O3 metal-insulator-semiconductor (MIS) trench Schottky barrier diodes (TSBDs) through atomic nitrogen treatment at th...

Universal polarization control with metasurfaces

Xiaoyan Shi, Zhongzhu Liang, Fuming Yang et al. Apr 14, 2025 10.1063/5.0254521

Polarization is one of the fundamental properties of electromagnetic waves, and polarization devices based on metasurfaces have a wide range of potential applications in detection, communication, and...

Glassy thermal conductivity in halide perovskites: The role of chemical bonding inhomogeneity and lone pair electrons

Dhivya Mahalakshmi C. N, Mohamed Jibri K. P, Archana J et al. Apr 14, 2025 10.1063/5.0256025

Fundamental understanding of the interplay between chemical bonding, lattice dynamics, and phonon transport is crucial for thermoelectric applications, and the desire for thermally insulating crystall...

Condensation of exciton polaritons in a flatband of a deformed triangle lattice at room temperature

Jing Wei, Xiaokun Zhai, Qiang Ai et al. Apr 14, 2025 10.1063/5.0256752

Flatbands in the periodic electronic or photonic structures attract intensive attention due to their infinite effective mass, which leads to plenty of physical phenomena, for example, the localization...

Influence of carrier localization on terahertz conductivity in Weyl semimetal Mn3Sn thin films

Qiujin Wang, Shaopeng Yang, Hong Yan et al. Apr 14, 2025 10.1063/5.0254697

The topological semimetal Mn3Sn, known for its strong electronic correlation characteristics, is of significant importance for research into its optoelectronic properties within the terahertz (THz) fr...

Two-photon absorption and nonlinear refraction of AlN from ultraviolet to near-infrared

Zhong-guo Li, Wenfa Zhou, Zenghua Wang et al. Apr 14, 2025 10.1063/5.0260338

We report a detailed characterization of the wavelength dependency of two-photon absorption coefficient β and Kerr nonlinearity n2 in aluminum nitride (AlN) single crystal over a spectral range from 3...

A dielectric material, Zr0.10Ta0.90O2.45, with a noncentrosymmetric L-Ta2O5-related structure

Takanori Mimura, Suzuka Udagawa, Yoshiyuki Inaguma Apr 14, 2025 10.1063/5.0259303

A dielectric material with a noncentrosymmetric L-Ta2O5-related structure, Zr0.10Ta0.90O2.45, was synthesized through a solid-state reaction using Ta2O5 and ZrO2 powders, followed by a 1700 °C heat tr...

Evidence of Tomonaga–Luttinger liquid at the folding edge of graphene

Hao Cai, Wei-Yu Liao, Lin He et al. Apr 14, 2025 10.1063/5.0248239

Searching for systems in which electronic interactions dominate microscopic quantum behaviors is highly desired in condensed matter physics. Here, we provide spectroscopic evidence for the Tomonaga–Lu...

Design of surface acoustic wave resonators based on a series neural network

Fan Li, Yahui Tian, Lirong Qian et al. Apr 14, 2025 10.1063/5.0251374

The surface acoustic wave (SAW) filter is widely applied in mobile communication, and the resonator is its main component. However, the traditional simulation and design methods of resonators often re...

Stabilization of III-nitrides at high temperatures using nitrogen plasma

Dillon Moher, Reilly Shanahan, Elijah Thimsen Apr 14, 2025 10.1063/5.0257926

III-Nitride materials such as gallium nitride (GaN) and indium nitride (InN) are critical for applications in electronics and optoelectronics due to their exceptional properties. However, their high-t...

Thermal transport properties of ultra-high-temperature ceramic superlattices

Xin Liang, Shuhang Yang Apr 14, 2025 10.1063/5.0263593

The superlattice (SL) structure, which can efficiently suppress phonon thermal transport, has important implications for materials design in thermal insulating and thermoelectric applications. In this...

(KCo)3<b>+</b> co-substitution and enhancement of negative thermal expansion in (KCo)<i>x</i>Sc2-<i>x</i>Mo3O12 ceramics

Zhanlu Shao, Obedisco T. Johnny, Faraz Hafeez et al. Apr 14, 2025 10.1063/5.0255155

Negative thermal expansion (NTE) materials shrink in volume when heated, which show abnormal thermal expansion property. Sc2Mo3O12 is a typical NTE material, but its high synthesis cost, low density,...

Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

S. Geiskopf, J. Igarashi, G. Malinowski et al. Apr 14, 2025 10.1063/5.0254042

Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2 nm thick Co40Fe40B20 soft layer could be achieve...

Germanium target sensed by phonon-mediated kinetic inductance detectors

D. Delicato, D. Angelone, L. Bandiera et al. Apr 14, 2025 10.1063/5.0253206

Cryogenic phonon detectors are adopted in experiments searching for dark matter interactions or coherent elastic neutrino-nucleus scattering, thanks to the low energy threshold they can achieve. The p...

Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching

Tingang Liu, Zhiyuan Liu, Haicheng Cao et al. Apr 14, 2025 10.1063/5.0251499

Surface defects in Al-rich AlGaN Schottky barrier diodes (SBDs) contribute to high reverse leakage currents, which limit breakdown voltage—a critical parameter for power applications. In this study, a...

Prominent nonreciprocity in metasurfaces supported by dielectric-coated Weyl semimetal substrates

Kwang-Hyon Kim, Myong-Chon Cho Apr 14, 2025 10.1063/5.0252629

Magnetless nonreciprocal radiation in the structures consisting of Weyl semimetal attracted much attention in modern photonics, and the major issue in this research direction is to achieve strong nonr...

Enhancing large effective spin-torque efficiency in MnRh by magnetic phase transition

Qifeng Li, Chenxi Zhou, Yan Xu et al. Apr 14, 2025 10.1063/5.0254025

We have experimentally confirmed the large enhancement of effective efficiency in charge-spin conversion through paramagnetic–antiferromagnetic phase transition in a MnRh film. Direct current-tuned sp...

Strain-enhanced luminescence from biaxially strained Ge light-emitting diodes on GeOI substrates

Rongqiao Wan, Lin Zhang, Yuanhao Zhu et al. Apr 14, 2025 10.1063/5.0250239

Due to the lack of efficient light sources compatible with complementary metal oxide semiconductor technology, the development of silicon-based photonic integrated circuits has been restricted. German...

Nonvolatile multistate magnetoresistance in all-van der Waals antiferromagnet-based spin valves

Wen Jin, Gaojie Zhang, Hao Wu et al. Apr 14, 2025 10.1063/5.0253237

Antiferromagnets are gaining increasing significance in spintronics due to their advantageous properties, such as picosecond spin dynamics and negligible stray fields. However, their practical applica...

Enhanced antiferromagnet-induced perpendicular magnetic anisotropy by Bi atomic layer with high spin–orbit coupling

Bo-Yao Wang, Bo-Xiang Liao, Hung-Hsun Chen et al. Apr 14, 2025 10.1063/5.0257880

Antiferromagnetic (AFM) thin films have emerged as promising candidates for inducing perpendicular magnetic anisotropy (PMA) in adjacent ferromagnetic (FM) layers. In this work, we demonstrate that ca...

Infrared polarization multiplexing meta-holography based on a dual-polarization channels meta-pixel

Xiaoyan Shi, Zhongzhu Liang, Enzhu Hou et al. Apr 14, 2025 10.1063/5.0251670

Optics metasurfaces have been utilized for research into computer-generated holography imaging and encryption due to their exceptional ability to manipulate fundamental properties of light waves, incl...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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