Applied Physics Letters

Vol. 126, Issue 21 Issue 21 2025
44
Articles

Articles in this Issue

Experimentally testing the circuit models of a Josephson junction embedded in a transmission line

P. H. Ouyang, J. Ma, S. R. He et al. May 26, 2025 10.1063/5.0266400

As a typical nonlinear device, Josephson junction (JJ) can be either served as a microwave device to scatter the traveling microwave or embedded in a transmission line (TL) resonator to modify the mod...

Robust and tunable oxide nanoscrolls for solar-driven H2 generation and storage

Adway Gupta, Arunima K. Singh May 26, 2025 10.1063/5.0268315

Hydrogen gas is a promising alternative to fossil fuels due to its high energy output and environmentally safe byproducts. Various morphologies of photocatalytic materials have been explored for high-...

Dzyaloshinskii-Moriya bias theory for thin magnetic slabs

S. Castillo-Sepúlveda, R. M. Corona, S. F. de Souza et al. May 26, 2025 10.1063/5.0267687

Magnetic bias has been thoroughly explored during recent decades. The off-center shift of the hysteresis loop is usually achieved through exchange or dipolar interactions. However, the recently identi...

Strain-induced orientational dependent ferroelectric phase transition in anisotropic NbOCl2 flakes

Wei Chen, Muyang Huang, Siwei Luo et al. May 26, 2025 10.1063/5.0259650

Strain engineering demonstrates remarkable precision in inducing phase transitions, as well as high orientability, enabling tunable phase transitions with low energy consumption and rapid response. Nb...

Oxygen plasma and post-annealing assisted surface oxidation for high-<i>V</i>th E-mode <i>p</i>-GaN HEMTs

Mao Jia, Bin Hou, Ling Yang et al. May 26, 2025 10.1063/5.0269738

This paper proposes an oxygen plasma-assisted surface oxidation technique and demonstrates that thermal annealing in an oxygen atmosphere can effectively accelerate the formation of GaON, thereby impr...

Efficiency droop contributors in InGaN green light emitting diodes

P. Thirasuntrakul, J. Li, J. Lee et al. May 26, 2025 10.1063/5.0272756

Here, efficiency droop contributors (i.e., inherent Auger–Meitner recombination, polarization-induced effects, thermal effects, and light extraction) in InGaN green light emitting diodes (LEDs) are de...

Broad-pH-value photocatalyst of Janus MXene monolayers functionalized with group VIA elements

Hao-Hao Yang, Ze-Shan Liu, Jiao Zhao et al. May 26, 2025 10.1063/5.0268625

Based on first-principles calculations, we conducted a systematic investigation into the photocatalytic performance of Janus MXene Y2COX (X = O, S, Se) monolayers. Our findings reveal that Y2COX monol...

Tunable ferrimagnetism and electrical transport properties in ferrimagnetic Mn3Si2Te6 through Cr doping

Zekun Zhou, Tao Han, Changsheng Jiang et al. May 26, 2025 10.1063/5.0271846

The layered ferrimagnet Mn3Si2Te6 has emerged as a paradigm-breaking system combining topological nodal-line band and record-breaking colossal magnetoresistance effect (CMR). Here, we report the dopin...

Interfacial photonic-electronic synergy in dielectric nanocomposite transport layers for high-efficiency perovskite photovoltaics

Jingyu Chu, Yubei Han, Liping Zhang et al. May 26, 2025 10.1063/5.0263340

Planar perovskite solar cells face a fundamental compromise between optical management and electronic optimization in conventional electron transport layers (ETLs). Here, we propose an approach throug...

Quantum frequency goniometer utilizing frequency measurement of continuously tuned laser

Pengyuan Chang, Haotian Li, Haoran Zhong et al. May 26, 2025 10.1063/5.0267856

High-precision small-angle measurement holds critical significance in advanced manufacturing and scientific research. Optical methods are highly favored for their non-contact characteristic, high accu...

Training-free and stochastic magnetic tunnel junction-based restricted Boltzmann machine for Boolean satisfiability problem

Wei Duan, Zhen Cao, Kaiyuan Wang et al. May 26, 2025 10.1063/5.0240005

Traditional processors based on the von Neumann architecture are not efficient when dealing with combinatorial optimization problems, which has led to the proposal of unconventional algorithms and dom...

Improved electrical transport properties in Ga/Ta co-doped LLZO under high temperature and pressure

Jialiang Jiang, Qinglin Wang, Jie Cui et al. May 26, 2025 10.1063/5.0264761

As a solid electrolyte for all-solid-state lithium-ion batteries, Ga/Ta co-doped LLZO has garnered significant interest because of its high conductivity and dense microstructure. However, its conducti...

Ultrahigh electron mobility in one-dimensional single-chain Bi4RuX2 (X = I, Br)

Xinyi Li, Xinyu Song, Ke Peng et al. May 26, 2025 10.1063/5.0267384

Low dimensional materials usually bring about unique physical properties and exceptional phenomena. Beyond the highly sought-after two-dimensional materials, the quasi-one-dimensional (1D) materials h...

Simultaneously optimizing power factor and thermal conductivity of <i>n</i>-type PbTe

Wei Hu, Tao Chen, Shenghui Wang et al. May 26, 2025 10.1063/5.0263654

p-type PbTe is long recognized as an outstanding thermoelectric material in the moderate temperature range, while its n-type counterpart shows relatively poor performance. To address this issue and en...

Current-induced field-free magnetization switching in CoFeB/Cu/CoFeB pseudo-spin-valves

Pengju Wang, G. S. Li, Jintao Ke et al. May 26, 2025 10.1063/5.0251666

Emergent orbital torque (OT) from the orbital Hall effect of light metals has significant potential for electrical control of magnetization. In this study, the electric manipulation of a most basic sp...

Tunable spin-valley states in collinear-antiferromagnetic Janus Re2X3Y3 (X, Y = I, Br, Cl; X ≠ Y) monolayers

Xiaosong Zhao, Yukai An May 26, 2025 10.1063/5.0272684

The unconventional spin-valley states in the collinear-antiferromagnetic (AFM) Janus Re2X3Y3 (X, Y = I, Br, Cl; X ≠ Y) monolayers are predicted using effective k · p and tight binding models, which ar...

Omnidirectional magneto-acoustic coupling in acoustically driven magnetoelectric antenna with focused interdigital transducers

Yifan Fu, Junru Li, Yinuo Song et al. May 26, 2025 10.1063/5.0271274

Acoustically driven magnetoelectric (ME) antennas present a promising approach for achieving orders-of-magnitude miniaturization. However, conventional resonator-based ME antennas suffer from substant...

Inversion-sensing SiO2-based MOS capacitive synapse for neuromorphic computing

Chi-Yi Kao, Jenn-Gwo Hwu May 26, 2025 10.1063/5.0257074

In this work, an inversion-sensing SiO2-based capacitive synapse device was introduced by using the lateral coupling effect in a concentric metal–oxide–semiconductor structure. The device achieved a C...

THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure

J. Wang, D. G. Rickel, C. F. C. Chang et al. May 26, 2025 10.1063/5.0273413

The recent discovery of highly conducting two-dimensional hole gases (2DHGs) in GaN/AlN heterojunctions has opened the door to efficient complementary GaN electronics, a long-standing challenge in wid...

Electronic structure regulation via heterojunction engineering for enhanced oxygen reduction reaction

Shuaishuai Cheng, Weidong Xing, Yahui Wang et al. May 26, 2025 10.1063/5.0271813

Transition metal catalysts have promising applications as potential alternatives to platinum-based catalysts in oxygen reduction reactions (ORR), and fine-tuning their local electronic structure is an...

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

Rinat Yapparov, Alejandro Quevedo, Tanay Tak et al. May 26, 2025 10.1063/5.0271165

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole inject...

NiOx gate oxide for enhanced thermal stability of threshold voltage in GaN MIS-HEMTs up to 400 °C

Mritunjay Kumar, Ganesh Mainali, Vishal Khandelwal et al. May 26, 2025 10.1063/5.0251561

This study demonstrates the high-temperature operation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) based on nickel oxide (NiOx) as an intermediate gate ox...

Epitaxial growth of Yb/Er co-doped HfO2 films with coexisting ferroelectric and luminescent properties

Jie Tu, Yingjia Li, Erxiang Tang et al. May 26, 2025 10.1063/5.0264399

We report on the fabrication of high-quality Yb3+ and Er3+ co-doped HfO2 epitaxial films using pulsed laser deposition. The host material HfO2 has relatively low phonon energy, which is desirable to i...

High-field electron transport properties of β-Ga2O3: An integrated Monte Carlo and first-principles approach

Zhigao Xie, Chee-Keong Tan, Ming-Cheng Cheng May 26, 2025 10.1063/5.0271859

In this work, we investigate the high-field electron transport properties of monoclinic gallium oxide (β-Ga2O3) by integrating full-band Monte Carlo simulations with first-principles calculations. Our...

Investigation of thermoelectric transport properties of <i>c</i>-axis oriented SnSb2Te4 thin-film fabricated using pulsed laser deposition technology

Mingjing Chen, Yangyang Zhen, Zihao Chen et al. May 26, 2025 10.1063/5.0265325

The van der Waals layered compound SnSb2Te4 has attracted intense attention as a promising thermoelectric material, yet its thin-film thermoelectric performance remains unexplored. In this study, we r...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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