Improved electrical transport properties in Ga/Ta co-doped LLZO under high temperature and pressure

J Jialiang Jiang Q Qinglin Wang (Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,) J Jie Cui (Shanghai Sci-Tech Inno Center for Infection and Immunity, National Medical Center for Infectious Diseases, Huashan Hospital, Institute of Infection and Health, Fudan University) H Huiyuan Guo (Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,) H Haiwa Zhang (Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,) G Guozhao Zhang (Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,) X Xingtao Chen (School of Physics and Materials Science, Nanchang University 3 , Nanchang 330031,) Y Yue Jiang Y Yinwei Li (Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering) C Cailong Liu (Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,)

Abstract

As a solid electrolyte for all-solid-state lithium-ion batteries, Ga/Ta co-doped LLZO has garnered significant interest because of its high conductivity and dense microstructure. However, its conductivity is still lower than that of liquid organic electrolytes. In this work, Li6.4Ga0.2La3Zr1.75Ta0.25O12 (Ga/Ta-LLZO) was synthesized by solid-state reaction, and the combined effects of elevated temperature and pressure on the electrical transport and dielectric properties of Ga/Ta-LLZO were systematically investigated over the temperature range of 24–150 °C and the pressure range of 3.3–30.2 GPa. The findings indicate that grain boundary resistance is the main contributor affecting the total resistance. Under a given pressure, as the temperature increases from 24 to 150 °C, the grain conductivity, grain boundary conductivity, and total conductivity of Ga/Ta-LLZO increase by about two orders of magnitude. At room temperature, when the pressure increases from 3.3 to 30.2 GPa, the grain conductivity, grain boundary conductivity, and total conductivity all increase by approximately one order of magnitude. The dielectric loss of Ga/Ta-LLZO decreases with the increase in temperature and pressure. In addition, this paper reveals the dielectric relaxation behavior of Ga/Ta-LLZO under high temperature and high pressure. At low frequencies, a dielectric relaxation with a giant dielectric constant is observed, which is associated with the relaxation of dipole formation due to the spatial charge polarization of lithium ions.

Article Details

Volume / Issue Vol. 126, Issue 21
Published May 26, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

J

Jialiang Jiang

Q

Qinglin Wang

Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,

J

Jie Cui

Shanghai Sci-Tech Inno Center for Infection and Immunity, National Medical Center for Infectious Diseases, Huashan Hospital, Institute of Infection and Health, Fudan University

H

Huiyuan Guo

Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,

H

Haiwa Zhang

Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,

G

Guozhao Zhang

Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,

X

Xingtao Chen

School of Physics and Materials Science, Nanchang University 3 , Nanchang 330031,

Y

Yue Jiang

Y

Yinwei Li

Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering

C

Cailong Liu

Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University 1 , Liaocheng 252000,