Epitaxial growth of Yb/Er co-doped HfO2 films with coexisting ferroelectric and luminescent properties
Abstract
We report on the fabrication of high-quality Yb3+ and Er3+ co-doped HfO2 epitaxial films using pulsed laser deposition. The host material HfO2 has relatively low phonon energy, which is desirable to inhibit the nonradiative relaxation. The dopant Yb3+ is used to stabilize the ferroelectric o-phase and also acts as the sensitizer to enhance the optical absorption cross section, while Er3+ is the luminescence activator. The films exhibit robust ferroelectricity with a remanent polarization of 12 μC/cm2 and comparable endurance performance to HfO2-based epitaxial films reported before. The up- and downconversion luminescence properties were ascertained by photoluminescence spectroscopy. The Yb3+/Er3+ co-doped HfO2 films with coexisting ferroelectric and luminescent functionalities may suggest a promising approach toward electric field tunable phosphors.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
Jie Tu
Yingjia Li
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University , 200241 Shanghai,
Erxiang Tang
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University , 200241 Shanghai,
Xiaoyu Qiu
Xiang Xu
Zijian Chen
State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, School of Chemical Engineering
Yujie Zhou
Chen Zhou
Department of Chemistry
Zhao Guan
Ni Zhong
Pinghua Xiang
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University , 200241 Shanghai,
Binbin Chen
School of Engineering, Westlake University, Hangzhou, China.