High-field electron transport properties of β-Ga2O3: An integrated Monte Carlo and first-principles approach

Abstract

In this work, we investigate the high-field electron transport properties of monoclinic gallium oxide (β-Ga2O3) by integrating full-band Monte Carlo simulations with first-principles calculations. Our approach dynamically generates electron–phonon transition rates eliminating the need for parameters fitting. The simulation results reveal a pronounced velocity overshoot at electric field strengths exceeding 100 kV/cm, with a peak drift velocity of 2.5 × 107 cm/s observed at 400 kV/cm along the a-axis at room temperature. The analysis underscores the significant contributions of both Bu and Ag optical phonon scattering in governing the transport phenomena under high electric fields. Moreover, the study identifies intrinsic anisotropy in electron transport characteristics, with distinct behaviors evident between high-field and low-field regimes. These findings provide critical insight into the optimization of β-Ga2O3-based electronic devices for high-frequency and high-power applications.