THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure
Abstract
The recent discovery of highly conducting two-dimensional hole gases (2DHGs) in GaN/AlN heterojunctions has opened the door to efficient complementary GaN electronics, a long-standing challenge in wide-bandgap semiconductor device physics. Electrical transport studies and simulations indicate that both heavy- and light-hole valence bands are occupied in these 2DHGs, but direct experimental characterization of the fundamental parameters of the mobile holes remains at an early stage. Here, we use time-domain terahertz spectroscopy and pulsed magnetic fields up to 31 T to directly measure cyclotron resonance of the mobile 2D holes in these GaN-based 2DHGs at low temperature (8 K), revealing key material properties including effective masses, densities, scattering times, and mobilities.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
J. Wang
D. G. Rickel
National High Magnetic Field Laboratory, Los Alamos National Lab 1 , Los Alamos, New Mexico 87545,
C. F. C. Chang
Department of Physics, Cornell University 2 , Ithaca, New York 14853,
Z. Zhang
P. Peng
Center for Integrated Nanotechnologies, Los Alamos National Lab 4 , Los Alamos, New Mexico 87545,
Y. Huang
A. K. Azad
Center for Integrated Nanotechnologies, Los Alamos National Lab 4 , Los Alamos, New Mexico 87545,
D. Jena
School of Electrical and Computer Engineering, Cornell University 3 , Ithaca, New York 14853,
H. G. Xing
School of Electrical and Computer Engineering, Cornell University 3 , Ithaca, New York 14853,
S. A. Crooker
National High Magnetic Field Laboratory, Los Alamos National Lab 1 , Los Alamos, New Mexico 87545,