Strain-induced orientational dependent ferroelectric phase transition in anisotropic NbOCl2 flakes

W Wei Chen M Muyang Huang (Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University , Hunan 411105,) S Siwei Luo F Fan Li R Rong Hu (Department of Systems Biology, School of Life Sciences, Southern University of Science and Technology) J Juzheng Zhang (Hubei Key Laboratory of Electrochemical Power Sources, College of Chemistry and Molecular Sciences) Y Yang Chen X Xiang Qi

Abstract

Strain engineering demonstrates remarkable precision in inducing phase transitions, as well as high orientability, enabling tunable phase transitions with low energy consumption and rapid response. NbOCl2, an emerging ferroelectric (FE) layered two-dimensional (2D) material, exhibits pronounced in-plane FE properties and demonstrates a significant anisotropic second harmonic generation response. Here, we demonstrate that the FE phase transition in NbOCl2 can be modulated by applying strain relative to its intrinsic lattice orientation. It has been discovered that the strain-induced FE phase transition in NbOCl2 crystals depends on the direction of the polar axis. Specifically, when strain is applied along the polar axis and reaches a minimal threshold of just 0.65%, it induces a transition from the FE phase to the antiferroelectric phase. By releasing the strain, NbOCl2 reverts to the FE phase, enabling a tunable phase transition along the polar axis. Furthermore, it was discovered that the challenge in inducing phase transition behavior by applying uniaxial strain along the nonpolar axis is due to the difficulty in effectively coupling the strain field to the key atomic interaction system that determines the FE properties. This work not only provides valuable strategies and insights for inducing reversible phase transitions in other 2D materials but also establishes a robust foundation for the development of FE memory devices with enhanced directional controllability.

Article Details

Volume / Issue Vol. 126, Issue 21
Published May 26, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

W

Wei Chen

M

Muyang Huang

Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University , Hunan 411105,

S

Siwei Luo

F

Fan Li

R

Rong Hu

Department of Systems Biology, School of Life Sciences, Southern University of Science and Technology

J

Juzheng Zhang

Hubei Key Laboratory of Electrochemical Power Sources, College of Chemistry and Molecular Sciences

Y

Yang Chen

X

Xiang Qi