Tunable ferrimagnetism and electrical transport properties in ferrimagnetic Mn3Si2Te6 through Cr doping

Z Zekun Zhou T Tao Han C Changsheng Jiang Q Qingge Mu (Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University 1 , Hefei 230601,) M Mingsheng Long (Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University 1 , Hefei 230601,) X Xingyuan Hou (Center of Free Electron Laser and High Magnetic Field, Anhui University 3 , Hefei 230601,) Y Yubing Tu (Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University 1 , Hefei 230601,) L Lei Shan

Abstract

The layered ferrimagnet Mn3Si2Te6 has emerged as a paradigm-breaking system combining topological nodal-line band and record-breaking colossal magnetoresistance effect (CMR). Here, we report the doping effects of magnetism and electrical transport properties in Mn3-xCrxSi2Te6. We find the Curie temperature Tc is significantly suppressed from 78 K for undoped sample to 57 K for x = 0.6 sample, and the magnetization and magnetic anisotropy are also suppressed upon Cr doping, respectively. However, for the electrical transport properties, the resistivity is increased monotonously upon Cr doping and the CMR is enhanced for low doped samples, which can be attributed to the strengthened coupling and doping-induced broadening of the activation energy gap. Our work reveals the ferrimagnetism and CMR in Mn3Si2Te6 can be effectively tuned by Cr doping, establishing a tunable knob for designing and modulating desired quantum phases in this layered topological magnet.

Article Details

Volume / Issue Vol. 126, Issue 21
Published May 26, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

Z

Zekun Zhou

T

Tao Han

C

Changsheng Jiang

Q

Qingge Mu

Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University 1 , Hefei 230601,

M

Mingsheng Long

Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University 1 , Hefei 230601,

X

Xingyuan Hou

Center of Free Electron Laser and High Magnetic Field, Anhui University 3 , Hefei 230601,

Y

Yubing Tu

Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University 1 , Hefei 230601,

L

Lei Shan