Applied Physics Letters

Vol. 128, Issue 4 Issue 4 2026
48
Articles

Articles in this Issue

Unified catalysis and confinement in a Prussian blue analogue via anisotropic lattice distortion

Yawen Wu, Situo Cheng, Yuhu Wang et al. Jan 26, 2026 10.1063/5.0308000

Resolving the coupled challenges of parasitic polyiodide shuttling and sluggish redox kinetics is critical for advancing aqueous zinc-iodine (Zn-I2) batteries. This work demonstrates a unified physica...

Giant structure anisotropy and highly polarization-sensitive photodetection in quasi-1D van der Waals Nb4P2S21

Shun Wang, Zhou Zhou, Xin Wang et al. Jan 26, 2026 10.1063/5.0309099

High-performance polarization-sensitive photodetectors have attracted significant attention in optoelectronics. Low-dimensional semiconductors with asymmetric crystal lattices are ideal polarization d...

High-performance annealing-free InGaZnOx thin film transistors by thermal ALD

Hyeong Seok Choi, Dong Hee Han, Hyun Woo Jeong et al. Jan 26, 2026 10.1063/5.0299768

We report indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) fabricated entirely by thermal atomic layer deposition (TALD) within a low thermal budget (≤300 °C) and without post-deposition...

3.89-kV AlGaN/GaN Schottky barrier diodes on silicon substrate with BaTiO3 field plate termination

Xiancheng Liu, Ru Xu, Na Sun et al. Jan 26, 2026 10.1063/5.0309845

This Letter demonstrates a high breakdown voltage (VBK) lateral AlGaN/GaN Schottky barrier diode (SBD) on Si substrate. Using the high-permittivity material BaTiO3 in a field plate structure provides...

Development of fast-response flexible temperature sensor for air–sea interface monitoring

Yabing Li, JieFei Li, Yujian Jin et al. Jan 26, 2026 10.1063/5.0313072

Sea surface temperature plays a crucial role in the exchange of heat, gases, and materials between the ocean and atmosphere, profoundly influencing global climate, marine ecosystems, and atmospheric c...

1 kV vertical Al0.51Ga0.49N power Schottky diodes

Shuhui Zhang, Hang Chen, Yuchuan Ma et al. Jan 26, 2026 10.1063/5.0312199

We report 1 kV vertical Al0.51Ga0.49N-on-sapphire power Schottky barrier diodes (SBDs) with oxygen plasma treatment (OPT-SBDs). Compared with the reference AlGaN SBDs without treatment (C-SBDs), the f...

Quantum anomalous Hall state and Weyl nodal line semimetal state in room-temperature magnetic VTiCF2 monolayer

Jiahui Li, Yinong Liu, Yuqing Mao et al. Jan 26, 2026 10.1063/5.0307107

Two-dimensional MXenes exhibit exceptional magnetic and topological properties, making them promising candidates for spintronic devices. Herein, we investigate the electronic and magnetic characterist...

A magneto-droplet resonance spectroscopy method for monitoring the blood coagulation process

Kecai Lu, Li Wang, Yujie Hu et al. Jan 26, 2026 10.1063/5.0304294

Assessment of coagulation function is crucial for anticoagulant therapy, surgical procedures, and cardiovascular diseases. Changes in the mechanical properties during coagulation can directly reflect...

Effect of doping on the ferroelectric properties of wurtzite Al1 <b>−</b> xYxN

Yulin Zhao, Yulu Zhou, Yifang Ouyang et al. Jan 26, 2026 10.1063/5.0303096

Ferroelectric materials can be used to fabricate ferroelectric random-access memory with significant performance advantages. Recently, doped wurtzite-type ferroelectrics have attracted widespread atte...

The manipulations of light-induced chiral edge states in monolayer noncollinear antiferromagnet Sc3C6O6

Haoyue Bai, Yuqian Jiang, Wenpeng Wang et al. Jan 26, 2026 10.1063/5.0293590

The quantum anomalous Hall effect (QAHE) is a hallmark of topological quantum states, which has attracted significant attention due to its dissipationless transport characteristics. This study theoret...

Low turn-on and surge-robust <i>β</i> -Ga2O3 heterojunction barrier Schottky diodes enabled by conductivity modulation

Shengliang Cheng, Yuru Lai, Xing Lu et al. Jan 26, 2026 10.1063/5.0291577

We report β-Ga2O3 heterojunction barrier Schottky (HJBS) diodes featuring a low turn-on voltage (Von) and high surge robustness. A p-type NiO overlayer, fully covering the tungsten-based Schottky cont...

Bridging thermal innovations to the design of 2D materials-based electronic devices

Sikai Lei, Lena Fine, Zhiting Tian et al. Jan 26, 2026 10.1063/5.0302123

Two-dimensional (2D) materials hold significant promise for next-generation nanoelectronics while introducing critical thermal management challenges. The extreme thinness, anisotropic heat transport,...

A general approach to modeling graphene field-effect transistors for photothermoelectric detection

Jinduo Zhang, Meng Chen, Xiaoyu Hu et al. Jan 26, 2026 10.1063/5.0308089

Owing to the unique linear Dirac-cone dispersion of graphene, graphene field-effect transistors (GFETs) exhibit advantages including high carrier mobility and ambipolar transport. Leveraging these pro...

Investigation of long-range superconducting proximity effects in Sb2Te3/FeSe0.5Te0.5 heterostructures with topological surface states

Yalin Zhang, Genhong Dai, Yilin Zhang et al. Jan 26, 2026 10.1063/5.0300607

This study investigates the interplay between superconductivity and topological surface states in heterostructures formed by combining the well-known three-dimensional topological insulator Sb2Te3 wit...

The cooperative cation– <b> <i>π</i> </b> interaction in two-dimensional THD-C as a high-capacity anode material for Li-ion batteries

Zihao Wang, Haoxuan Chen, Zhenjie Zhao et al. Jan 26, 2026 10.1063/5.0312468

Two-dimensional (2D) carbon allotropes for high-performance electrode materials in lithium-ion batteries (LIBs) are attracting a great deal of research interest due to their unique architectures. Here...

Surface contact doping effect of Si on AlGaN/GaN heterojunction

Heng Wang, Junmin Xue, Yifang Hong et al. Jan 26, 2026 10.1063/5.0295985

A thin layer of Si was deposited on a series of AlGaN/GaN heterojunctions with sub-critical barrier thicknesses, resulting in the formation of a two-dimensional electron gas (2DEG) at the heterointerf...

Inverse design of terahertz amplitude modulator using tandem deep neural networks

Tae-In Jeong, Eunji Choi, Robert A. Taylor et al. Jan 26, 2026 10.1063/5.0302765

The terahertz (THz) frequency range has emerged as a promising spectral window for broad applications, including next-generation wireless communication, high-resolution imaging, and ultrafast spectros...

Enhanced lifetime of flexible organic light-emitting diodes by pressure assisted interfacial adhesion

Hao-Yang Zhang, Da Yin, Shi-Xin Jia et al. Jan 26, 2026 10.1063/5.0311925

Environmental stability and lifetime are important for the applications of flexible organic light-emitting diodes (OLEDs). This work investigates the effects of external pressure on the stability and...

Ultra-low damping of the translational motion of a composite graphite rod in a magneto-gravitational trap

Connor E. Murphy, Cody Jessup, Tahereh Naderishahab et al. Jan 26, 2026 10.1063/5.0287198

We demonstrate an ultra-low dissipation, one-dimensional mechanical oscillator formed by levitating a millimeter-scale composite graphite rod in a room-temperature magneto-gravitational trap. The trap...

Quantum oscillations and ultrahigh mobility in rare-earth tritellurides SmTe3

Hao Wang, Yang Chen, Fang Tang et al. Jan 26, 2026 10.1063/5.0306708

Rare-earth tritellurides (RTe3, R = lanthanide) represent an ideal platform for investigating charge density wave (CDW) order and associated Fermi surface reconstructions. While quantum oscillations h...

Extending channel attention to kernel space for fluorescence microscopy image denoising

Xiangyu Zhou, Wenlong Chen, Zixiong Fan et al. Jan 26, 2026 10.1063/5.0311220

Deep learning has demonstrated significant potential in fluorescence microscopy imaging. However, most existing methods primarily enhance channel or spatial features, overlooking the capabilities of k...

Achieving analog and digital resistive switching for quasi-2D perovskite memristors by compositional regulation and crystalline manipulation

Chenhui Su, Xuemiao Wen, Wen Lei et al. Jan 26, 2026 10.1063/5.0276050

With the advent of the information age, the demand for memristors in neuromorphic circuits and artificial intelligence has become increasingly urgent. In this Letter, analog- and digital-type resistiv...

62.6 GHz ScAlN solidly mounted acoustic resonators

Yinan Wang, Byeongjin Kim, Nishanth Ravi et al. Jan 26, 2026 10.1063/5.0306947

We demonstrate a record-high 62.6 GHz solidly mounted acoustic resonator (SMR) incorporating a 67.6 nm scandium aluminum nitride (Sc0.3Al0.7N) piezoelectric layer on a 40 nm buried platinum (Pt) botto...

Integrated AlGaAs/GaAs betavoltaic arrays with low self-discharge LiCoO2 batteries for efficient β-energy conversion and storage

Hongyi Tian, Ke Zhang, Jingbin Lu et al. Jan 26, 2026 10.1063/5.0302314

Nuclear batteries are emerging power devices that convert radioactive decay energy into electricity. In this study, we developed a six-layer AlGaAs/GaAs heterostructure betavoltaic cell array by seria...

Role of Rashba spin–orbit coupling for voltage-controlled magnetic anisotropy at magnetic tunnel junction interface Fe/MgO

Y.-N. Apriati, M. Tsuchida, K. Nawa et al. Jan 26, 2026 10.1063/5.0304651

At the Fe/MgO interface in magnetic tunnel junctions (MTJs), a sharp electrostatic potential gradient results in the breaking of inversion symmetry of the system and gives rise to the Rashba-type spin...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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