Low turn-on and surge-robust <i>β</i> -Ga2O3 heterojunction barrier Schottky diodes enabled by conductivity modulation
Abstract
We report β-Ga2O3 heterojunction barrier Schottky (HJBS) diodes featuring a low turn-on voltage (Von) and high surge robustness. A p-type NiO overlayer, fully covering the tungsten-based Schottky contacts, enables efficient minority carrier injection, thereby lowering Von and enhancing surge performance. Fabricated small-area diodes (0.15 × 0.12 mm2) exhibit a breakdown voltage of 1.4 kV and a Von of 0.51 V. Packaged large-area devices (3 × 3 mm2) deliver 6 A at a 2 V forward bias and sustain surge currents up to 50 A, attributed to conductivity modulation by the p-NiO overlayer. Technology computer-aided design (TCAD) simulations confirm that the proposed HJBS structure significantly reduces peak lattice temperatures compared to conventional designs. These results demonstrate the strong potential of β-Ga2O3 HJBS diodes for high-efficiency, low-loss power switching applications with enhanced transient tolerance.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (13)
Shengliang Cheng
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University 1 , Guangzhou 510275,
Yuru Lai
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University 1 , Guangzhou 510275,
Xing Lu
Huichao Hu
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University 3 , Guangzhou 510275,
Rui Zhou
Rui Xie
School of Economics and Trade
HaoWen Luo
Huaxing Jiang
School of Integrated Circuits, South China University of Technology 1 , Guangzhou,
Zhisheng Wu
Department of Electrical and Electronic Engineering
Jun Liang
Zimin Chen
Department of Emergency Medicine, State Key Laboratory of Biotherapy, West China Hospital, Sichuan University
Gang Wang
Yanli Pei
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University 1 , Guangzhou 510275,