Applied Physics Letters
Articles in this Issue
High-performance Ku-band thin-barrier AlGaN/GaN MIS-HEMTs on Si using high-stress LPCVD-SiN passivation for low-voltage applications
This paper reports on high-performance Ku-band AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) on a Si substrate for low-voltage applications. Benefiting from th...
Label-free, ultra-sensitive DNA biosensing using active two-mode microfiber ring laser functionalized by self-assembled DNA nanoprobes
A label-free, ultra-sensitive deoxyribonucleic acid (DNA) biosensor based on two-mode microfiber ring laser is proposed and demonstrated. A tapered two-mode fiber interferometer (TTMFI) is developed t...
Ferroelectrically reversible PL-AHE in multiferroic heterostructures of rare-earth iodides
Layer-polarized anomalous Hall effect (LP-AHE), arising from the coupling between valley-contrasting Berry curvature and the layer degree of freedom, is a fundamental phenomenon in condensed matter ph...
Neural network-assisted indirect probing of magnetic skyrmions in MnSi via magnetic entropy variation
Magnetic skyrmions emerge as promising candidates for next-generation magnetic storage technologies. However, their direct detection requires advanced techniques such as Lorentz transmission electron...
Auto-frequency-adaptive 3D ultrasonic phased-array imaging system for highly attenuative materials
In this paper, we propose an auto-frequency-adaptive three-dimensional (3D) ultrasonic phased-array system for visualizing internal defects in concrete. Given the high attenuation and diversity of agi...
Ionization energy of the oxygen donor in AlN
Oxygen is a ubiquitous impurity in AlN that influences its optical and electronic properties. A precise determination of its electronic levels is essential for device-specific material-engineering. In...
High-energy density in dielectric film capacitors via interface engineering and polarization behavior regulation
High-performance dielectric film capacitors are crucial for energy storage applications and the modern electronics industry due to their high power density and ultra-fast charge–discharge speed. Herei...
Superconducting infrared nanobolometers with on-chip photon-sorting metasurfaces
Superconducting bolometric detectors offer unrivaled sensitivity across a broad spectral range. However, their multispectral resolving capability is fundamentally constrained by a reliance on bulky ex...
Tunable terahertz beam splitter based on programmable liquid crystal integrated metasurface
As a kind of essential functional device, beam splitters can separate beams into desired directions and divide energy into two or more portions, which can find critical applications in interferometry,...
On-chip electrically tunable silicon whispering gallery mode resonator for THz integrated circuits
This study demonstrates an on-chip electrically tunable whispering gallery mode resonator (WGMR) operating in the terahertz (THz) band, fabricated on a silicon platform. The device consists of a micro...
Atomistic mechanisms of opposite threshold voltage shift induced by La and Al doping in HfO2-based gate stacks: First-principles insights
For multi-threshold voltage device integration, threshold voltage modulation is achieved by depositing La- and Al-based oxide capping layers on high-k dielectric surfaces to induce interfacial dipoles...
Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire
We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of 0.5°, 2°, 4°, and 10° toward m-axis. X-...
Engineering band topology of Dirac semimetal films via in-plane magnetic fields
Band structure engineering continues to be pursued in solid-state physics. Here, we study Dirac semimetal (DSM) thin films under in-plane magnetic fields and uncover an extrinsic mechanism for band co...
Highly efficient pixelated quantum-dot light-emitting diodes enabled by bi-color-converting cavities
Fabricating quantum-dot (QD) light-emitting diode (LED) arrays typically relies on direct QD patterning or costly color filters (CFs), highlighting the need for cost-effective patterning techniques to...
Improving coherence and stability of superconducting qubits by thermal annealing in vacuum
Superconducting qubits are prone to noise induced by material defects, which degrades their coherence and performance of gate operations. In this work, by thermally annealing a chip with 20 tunable tr...
Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
We investigate the influence of AlN buffer thickness on the structural, electrical, and thermal properties of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on semi-insulating SiC substrat...
Effect of movable <i>Paramecium caudatum</i> on the effective viscosity of aqueous polymer solution
The effective viscosity of an active suspension depends on the mobility of microswimmers. In addition, there is an inverse effect of the rheological properties of the liquid on the motion of the micro...
A low-cost, high-sensitivity WSPRi system using a multi-LED array and smoothness-constrained reconstruction algorithm
Conventional wavelength-modulated surface plasmon resonance imaging (WSPRi) systems rely on costly spectrometers or tunable filters, limiting their accessibility. We report a low-cost, high-performanc...
Photoluminescence properties of α-(Al <i>x</i> Ga1– <i>x</i> )2O3 thin films under excitation with synchrotron radiation
α-(AlxGa1−x)2O3 has great potential in deep ultraviolet (DUV) optoelectronic devices due to its ultra-wide bandgap. The α-(AlxGa1−x)2O3 films demonstrated good DUV photodetection but hardly exhibited...
Monolithic integration of graphene and lithium niobate layer grown by atomic layer deposition for uncooled infrared photodetectors
Graphene-based hybrid structures offer a promising platform to enhance device performance via unique phenomena such as the photogating effect. Lithium niobate (LiNbO3) has excellent optoelectronic pro...
Shubnikov–de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
AlYN and AlScN have recently emerged as promising nitride materials that can be integrated with GaN to form two-dimensional electron gases (2DEGs) at heterojunctions. Electron transport properties in...
Tunable spin-to-charge conversion across semiconductor–semimetal transition in large-area PtSe2 thin films
High-speed and low-power spin–orbit torque (SOT) devices necessitate materials with high spin-to-charge conversion efficiency. Transition metal dichalcogenides (TMDs) have emerged as a promising platf...