1 kV vertical Al0.51Ga0.49N power Schottky diodes
Abstract
We report 1 kV vertical Al0.51Ga0.49N-on-sapphire power Schottky barrier diodes (SBDs) with oxygen plasma treatment (OPT-SBDs). Compared with the reference AlGaN SBDs without treatment (C-SBDs), the fabricated vertical AlGaN OPT-SBDs feature a dramatically reduced reverse leakage current density by three orders of magnitude and a significantly boosted breakdown voltage of 1045 V. In addition, the fabricated AlGaN OPT-SBDs exhibit a high on/off ratio of ∼1010, a low turn-on voltage of 1.59 V, a low specific on-resistance of 0.18 Ω cm2, and an ideality factor of 2.36. These results demonstrate the great potential of AlGaN-based power devices for high-voltage and high-power applications.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (7)
Shuhui Zhang
Hang Chen
James Tarpo Jr. And Margaret Tarpo Department of Chemistry
Yuchuan Ma
School of Integrated Circuits, Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University 1 , Jinan 250100,
Tianpeng Yang
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , Changchun 130012,
Tingting Mi
EpiTop Optoelectronic Co., Ltd 3 ., Maanshan 243000,
Xiaowen Wang
Chao Liu