3.89-kV AlGaN/GaN Schottky barrier diodes on silicon substrate with BaTiO3 field plate termination
Abstract
This Letter demonstrates a high breakdown voltage (VBK) lateral AlGaN/GaN Schottky barrier diode (SBD) on Si substrate. Using the high-permittivity material BaTiO3 in a field plate structure provides the benefit of lowering the peak surface electric field from 2.9 to 1.9 MV/cm and improving VBK from 3.22 to 3.89 kV, when the anode–cathode distance (LAC) is 30 μm. Accompanied with a specific on-resistance (Rsp,on) of 3.89 mΩ cm2, the AlGaN/GaN SBD on Si substrate achieved a power figure-of-merit as high as 3.89 GW/cm2, indicating superior potential application in medium- to high-power devices.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (15)
Xiancheng Liu
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University , Jiangsu, Nanjing 210093,
Ru Xu
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University , Jiangsu, Nanjing 210093,
Na Sun
Jiahao Yao
Tong Xu
Jinyu Lu
Tianhao Niu
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University , Jiangsu, Nanjing 210093,
Dunjun Chen
Zili Xie
Jiandong Ye
School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,
Xiangqian Xiu
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University , Jiangsu, Nanjing 210093,
Yi Shi
School of Materials Science and Engineering, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, Guangdong Functional Biomaterials Engineering Technology Research Center
Rong Zhang
Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China
Youdou Zheng
School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,
Peng Chen