Achieving analog and digital resistive switching for quasi-2D perovskite memristors by compositional regulation and crystalline manipulation
Abstract
With the advent of the information age, the demand for memristors in neuromorphic circuits and artificial intelligence has become increasingly urgent. In this Letter, analog- and digital-type resistive switching is concurrently obtained in quasi-2D perovskite memristors by regulating elemental composition and crystallinity. For the high Pb sample treated with MACl, continuous enhancement and suppression of analog-type conductance are achieved under direct current voltage sweep and voltage pulse stimulation, which shows 62.2% enhancement and 68.4% inhibition after long-term synaptic plasticity. The analog-type memristor also presents good spike voltage-dependent and frequency-dependent plasticities with a paired-pulse facilitation index of 55.5%. In contrast, for the low Pb sample treated with MACl, the lattice distortion and crystal defects are further decreased, leading to a sudden change of digital-type resistance in the current−voltage curve. The digital-type memristor has very good non-volatile memory performance with a resistance-to-switch ratio of 5 × 103, an endurance of more than 2100 cycles, a retention characteristic of more than 104 s, a statistical set voltage of 0.55 V, and a reset voltage of −1 V. This study elucidates analog and digital resistive switching mechanism in quasi-2D perovskites and demonstrates their significant potential and prospects in neuronal circuit and storage-computing technologies.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (15)
Chenhui Su
Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, College of Physics and Optical Engineering, Jinan University 1 , Guangzhou 510632,
Xuemiao Wen
Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, College of Physics and Optical Engineering, Jinan University 1 , Guangzhou 510632,
Wen Lei
Guanglu Lin
Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, College of Physics and Optical Engineering, Jinan University 1 , Guangzhou 510632,
Tianjiao Liu
Yijing Fan
Yibo Peng
Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, College of Physics and Optical Engineering, Jinan University 1 , Guangzhou 510632,
Cuiying Hu
Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, College of Physics and Optical Engineering, Jinan University 1 , Guangzhou 510632,
Zhenfang Tang
Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, College of Physics and Optical Engineering, Jinan University 1 , Guangzhou 510632,
Zhichao Chen
Department of Pharmaceutics, Wuya College of Innovation
Shuyan Fang
Renqiang Yang
Dongping Yang
Research Centre for Frontier Fundamental Studies, Zhejiang Lab
Xingui Tang
Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou Higher Education Mega Center 5 , Guangzhou 510006,
Lintao Hou