Giant structure anisotropy and highly polarization-sensitive photodetection in quasi-1D van der Waals Nb4P2S21

S Shun Wang (Department of Mathematics) Z Zhou Zhou X Xin Wang Z Zhida Han (School of Electronic and Information Engineering, Suzhou University of Technology 1 , Changshu 215500,) Y Yong Fang Y Yiqi Hu (School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Soochow University 2 , Suzhou 215000,) Q Qiankun Li (School of Energy, School of Optoelectronic Science and Engineering, School of Physical Science and Technology) L Lu You (School of Energy, School of Optoelectronic Science and Engineering, School of Physical Science and Technology) Y Yuyan Weng (School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Soochow University 2 , Suzhou 215000,) L Liang Fang

Abstract

High-performance polarization-sensitive photodetectors have attracted significant attention in optoelectronics. Low-dimensional semiconductors with asymmetric crystal lattices are ideal polarization detection media due to their inherent optical and electronic anisotropies. Among them, the emerging quasi-one-dimensional van der Waals metal phosphorus sulfide, Nb4P2S21, exhibits prominent in-plane optical anisotropy and broad UV-visible light absorption. To validate its application potential for polarization-sensitive photodetection, herein, the anisotropic lattice vibrational and optical characteristics of Nb4P2S21 were systemically investigated by angle-resolved polarized Raman, transmission, and reflection spectroscopies. Leveraging these properties, we fabricate a planar two-terminal Nb4P2S21-based photodetector, which demonstrates a stable broadband photoresponse and pronounced polarization sensitivity, delivering a responsivity of 0.29 mA W−1 and a high anisotropic ratio of 2.53 at 405 nm. Beyond revealing fundamental correlations between crystal symmetry and optical response, these findings establish Nb4P2S21 as a promising candidate for next-generation polarization-sensitive optoelectronic devices.

Article Details

Volume / Issue Vol. 128, Issue 4
Published January 26, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

S

Shun Wang

Department of Mathematics

Z

Zhou Zhou

X

Xin Wang

Z

Zhida Han

School of Electronic and Information Engineering, Suzhou University of Technology 1 , Changshu 215500,

Y

Yong Fang

Y

Yiqi Hu

School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Soochow University 2 , Suzhou 215000,

Q

Qiankun Li

School of Energy, School of Optoelectronic Science and Engineering, School of Physical Science and Technology

L

Lu You

School of Energy, School of Optoelectronic Science and Engineering, School of Physical Science and Technology

Y

Yuyan Weng

School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Soochow University 2 , Suzhou 215000,

L

Liang Fang