Applied Physics Letters

62.6 GHz ScAlN solidly mounted acoustic resonators

Y Yinan Wang (Department of Information and Computing Sciences, School of Mathematical Science, Peking University) B Byeongjin Kim N Nishanth Ravi (University of California at Los Angeles 2 , Los Angeles, California 90095,) K Kapil Saha (Northeastern University 3 , Boston, Massachusetts 02115,) S Supratik Dasgupta (Bühler Leybold Optics 4 , Cary, North Carolina 27513,) V Vakhtang Chulukhadze (University of Texas at Austin 1 , Austin, Texas 78758,) E Eugene Kwon (University of California at Los Angeles 2 , Los Angeles, California 90095,) L Lezli Matto (University of California at Los Angeles 2 , Los Angeles, California 90095,) P Pietro Simeoni (Northeastern University 3 , Boston, Massachusetts 02115,) O Omar Barrera (University of Texas at Austin 1 , Austin, Texas 78758,) I Ian Anderson (California Institute of Technology) T Tzu-Hsuan Hsu (Department of Electrical and Computer Engineering, The University of Texas at Austin 2 , Austin, Texas 78712,) J Jue Hou (Department of Applied Chemistry and Environmental Science RMIT University Melbourne VIC 3000 Australia) M Matteo Rinaldi M Mark S. Goorsky (Department of Materials Science and Engineering, University of California 3 , Los Angeles, California 90095,) R Ruochen Lu (Department of Electrical and Computer Engineering, The University of Texas at Austin 2 , Austin, Texas 78712,)

Abstract

We demonstrate a record-high 62.6 GHz solidly mounted acoustic resonator (SMR) incorporating a 67.6 nm scandium aluminum nitride (Sc0.3Al0.7N) piezoelectric layer on a 40 nm buried platinum (Pt) bottom electrode, positioned above an acoustic Bragg reflector composed of alternating SiO2 (28.2 nm) and Ta2O5 (24.3 nm) layers in 8.5 pairs. The Bragg reflector and piezoelectric stack above are designed to confine a third-order thickness-extensional bulk acoustic wave mode, while efficiently transducing with thickness-field excitation. The fabricated SMR exhibits an extracted piezoelectric coupling coefficient (k2) of 0.8% and a maximum Bode quality factor (Q) of 51 at 63 GHz, representing the highest operating frequency reported for an SMR to date. These results establish a pathway toward mmWave SMR devices for filters and resonators in next-generation RF front ends.

Download PDF View Original
APA MLA Chicago BibTeX RIS

Article Details

Volume / Issue Vol. 128, Issue 4
Published January 26, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (16)

Y

Yinan Wang

Department of Information and Computing Sciences, School of Mathematical Science, Peking University

B

Byeongjin Kim

N

Nishanth Ravi

University of California at Los Angeles 2 , Los Angeles, California 90095,

K

Kapil Saha

Northeastern University 3 , Boston, Massachusetts 02115,

S

Supratik Dasgupta

Bühler Leybold Optics 4 , Cary, North Carolina 27513,

V

Vakhtang Chulukhadze

University of Texas at Austin 1 , Austin, Texas 78758,

E

Eugene Kwon

University of California at Los Angeles 2 , Los Angeles, California 90095,

L

Lezli Matto

University of California at Los Angeles 2 , Los Angeles, California 90095,

P

Pietro Simeoni

Northeastern University 3 , Boston, Massachusetts 02115,

O

Omar Barrera

University of Texas at Austin 1 , Austin, Texas 78758,

I

Ian Anderson

California Institute of Technology

T

Tzu-Hsuan Hsu

Department of Electrical and Computer Engineering, The University of Texas at Austin 2 , Austin, Texas 78712,

J

Jue Hou

Department of Applied Chemistry and Environmental Science RMIT University Melbourne VIC 3000 Australia

M

Matteo Rinaldi

M

Mark S. Goorsky

Department of Materials Science and Engineering, University of California 3 , Los Angeles, California 90095,

R

Ruochen Lu

Department of Electrical and Computer Engineering, The University of Texas at Austin 2 , Austin, Texas 78712,

Related Articles from this Journal

Interface engineering with an rGO electron extraction layer for high-efficiency and stable Cu2ZnSnS4-based photocathode

Zhenyan Xiao, Piao Zhang et al. Aug 2026 10.1063/5.0312010

Transmission diffuse EUV scattering by nanoscale Lamb waves in thin membranes

Alessandra Milloch, Naman Agarwal et al. Aug 2026 10.1063/5.0343558

Optimized Nb-doped SnO2 buffer layer for enhanced carrier extraction and Sb2S3 photovoltaic responses

Xinsheng Liu, Xiangyang Liu et al. Aug 2026 10.1063/5.0343471

Exceptionally high thermoelectric power factors at low temperatures in heavily doped p- and n-type Ge-rich Ge1−xSnx films

Masashi Kurosawa, Takayoshi Katase et al. Aug 2026 10.1063/5.0346412

Unlocking room-temperature magnetoelectricity in Ba1.5Sr1.5-based Z-type hexaferrites via magnetic anisotropy modulation

Huantong Wu, Jun Li et al. Aug 2026 10.1063/5.0314711