Applied Physics Letters

Vol. 128, Issue 2 Issue 2 2026
54
Articles

Articles in this Issue

TiSOH monolayer: A ferromagnetic semiconductor with multiple topological properties

Guang Song, Qingyu Yan, Guannan Li et al. Jan 12, 2026 10.1063/5.0304822

Two-dimensional (2D) Janus ferromagnetic (FM) materials have recently attracted considerable interest due to their intriguing properties. Their structural asymmetry and the resulting electronic struct...

Petroleum coke-derived porous carbon encapsulating phase change materials for solar-thermal-electricity output

Jianhua Bian, Lili Wang, Libing Liao et al. Jan 12, 2026 10.1063/5.0312880

Solar energy utilization is hindered by intermittency, highlighting the urgency of advanced thermal energy storage technologies. Phase change materials (PCMs) are promising candidates but suffer from...

Controllable intrinsic defect-induced electronic structure modulation in few-layer pentagonal PdPS

Zehao Yu, Pin Lyu, Meilin Li et al. Jan 12, 2026 10.1063/5.0305488

Palladium phosphide sulfide (PdPS), a two-dimensional (2D) semiconductor with a unique Cairo pentagonal lattice, shows great potential for optoelectronic and thermoelectric applications. However, its...

Solution-processed epitaxial PdRhO2 metallic films as Schottky electrodes

Renhuai Wei, Cheng Gao, Yuhao Meng et al. Jan 12, 2026 10.1063/5.0290502

Metallic delafossite PdRhO2 thin films were synthesized using a low-rhodium solution deposition strategy, achieving epitaxial growth despite a significant lattice mismatch. Comparative structural and...

Universal Ohmic contacts to <b> <i>β</i> </b> -Ga2O3 using interfacial dipoles of ultra-thin MgF2 layer and related defect passivation

Shivani, Vinit Sheokand, Jiya et al. Jan 12, 2026 10.1063/5.0308375

We report on the role of MgF2 as an interfacial buffer layer to achieve universal Ohmic contact on polycrystalline β-Ga2O3 thin film. Polycrystalline Ga2O3 thin films were deposited using RF magnetron...

Cu2+-facilitated formation of Mn2+–Mn2+ dimers inducing redshift of Mn2+ emission in Co-doped perovskite nanocrystals

Yunfeng Wang, Chenenze Jiang, Yunru Chen et al. Jan 12, 2026 10.1063/5.0311121

Transition metal doping in perovskite nanocrystals is an important means to regulate their photophysical properties. In particular, the underlying concentration effect and optical process deserve furt...

Single-frequency Raman vortex beam enabled by a frequency-locked off-axis diamond cavity

Zhenxu Bai, Hui Chen, Junhong Chen et al. Jan 12, 2026 10.1063/5.0294558

Benefiting from the excellent optothermal properties of diamond crystals and the absence of spatial hole burning effects in stimulated Raman scattering, diamond Raman lasers hold significant advantage...

Pressure-dependent photoluminescence study of band structure in germanium

Yuanhao Zhu, Xiuming Dou, Shaoteng Wu et al. Jan 12, 2026 10.1063/5.0306355

Germanium (Ge) has long been regarded as a promising laser material for silicon photonics due to its quasi-direct bandgap to make up for the deficiency of indirect bandgap silicon, but its energy band...

Quantum structure for efficient p-doping of AlGaN with Al content over 70%

Ziyue Qin, Ke Jiang, Bingxiang Wang et al. Jan 12, 2026 10.1063/5.0304708

The low p-doping efficiency of AlGaN due to its high activation energy limits the advancement of deep ultraviolet optoelectronics. The quantum engineering method has provided a new insight to address...

Negative in-plane Poisson's ratio in [001]-textured PMN-PZT ceramics

Mingyang Tang, Liqing Hu, Guangya Xie et al. Jan 12, 2026 10.1063/5.0309721

[001]-textured 0.4P(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 (PMN-PZT) ceramics were fabricated by templated grain growth using 3 vol. % BaTiO3. Full matrices of dielectric (εij), elastic (sij, cij), and p...

Red micro-LEDs on glass substrates for ultrahigh-luminance (&amp;gt;105 nits) transparent displays

Changdong Tong, Wenjie He, Jinfeng Zhang et al. Jan 12, 2026 10.1063/5.0311701

AlGaInP-based red micro-light-emitting diodes (micro-LEDs) with lateral dimensions of 28 × 52 µm2 were fabricated on transparent glass substrates via solder bonding for high-performance transparent di...

Spin wave interference-based efficient neuromorphic computing

Mohd S Sabir, Ayush K Gupta, Aman Khosla et al. Jan 12, 2026 10.1063/5.0300892

We demonstrate the design of a neuromorphic hardware, spin wave interference device (SWID), utilizing micromagnetic simulations, for performing feature extraction and classification of binary digit pa...

Coherent transport in strongly correlated perovskite-manganite quantum wells

Tatsuro Endo, Yasufumi Araki, Munetoshi Seki et al. Jan 12, 2026 10.1063/5.0303809

Perovskite transition metal oxides (TMOs) are hallmark systems for studying electron correlations, with strong Coulomb interactions reaching the electron volt scale. Such interactions generally hinder...

Twist angle control of charge density wave transitions in 1T–TaS2 homostructures

Zhiqin Li, Li Liu, Minxin Li et al. Jan 12, 2026 10.1063/5.0303061

Twisted homostructures provide a versatile platform to engineer interlayer coupling and collective orders via moiré superlattices. While the effectiveness of the moiré potential in modulating charge d...

Temperature-dependent wake-up phenomena in AlScN ferrodiode memory devices

David C. Moore, Spencer Ware, Zachary Anderson et al. Jan 12, 2026 10.1063/5.0303160

Ferroelectric aluminum scandium nitride (AlScN) is a promising material for use in nonvolatile digital memory operating at temperatures well above the limits of current commercial technology. Ferrodio...

Pressure-induced polar–nonpolar–polar phase conversion in Na0.5Bi0.5TiO3

Xin Zhang, Lin Zhao, Zhenfang Xing et al. Jan 12, 2026 10.1063/5.0294308

Na0.5Bi0.5TiO3 (NBT) is a promising lead-free ferroelectric material and has a unique A-site substitution structure with rhombohedral (R3c) symmetry at ambient conditions. Combining in situ polarizati...

Atomistic nonequilibrium Green's function study of radiation-induced charge loss in floating gate flash memories

X. C. Chen, L. Li Jan 12, 2026 10.1063/5.0297525

This study presents an atomistic nonequilibrium Green's function (NEGF) approach for modeling radiation-induced charge loss in floating-gate flash memories, which become increasingly vulnerable to rad...

Magnetic particle optical imaging method based on magnetic linear dichroism effect

Xinchao Cui, Joanna Chwiej, Ryszard Buczynski et al. Jan 12, 2026 10.1063/5.0308244

Magnetic particle imaging (MPI) has attracted considerable attention in recent years because it can achieve functional imaging of magnetic nanoparticles (MNPs) within biological tissues. Developing ef...

Modulation of interfacial Schottky barrier of In2Se3/Ti3C2X2 (X <b>=</b> Cl; F; O; OH) ferroelectric heterostructure

Jinqi Gao, Xiangxiang Feng, Qianwei Wang et al. Jan 12, 2026 10.1063/5.0308759

Reducing the interface barrier between metals and semiconductors is crucial for designing high-performance optoelectronic devices based on van der Waals heterostructures. In this study, the van der Wa...

Single-sided non-collinear shear wave mixing for material characterization

Junzhen Wang, Hendrik M. Carius, Peter B. Nagy et al. Jan 12, 2026 10.1063/5.0312567

This Letter develops a single-sided non-collinear shear wave mixing technique for material characterization based on the phase-matching interface condition. Analytical modeling reveals that the interf...

Room-temperature continuous-wave lasing at 318 nm on a relaxed AlGaN template grown on a sapphire substrate

Rintaro Miyake, Takumu Saito, Shogo Karino et al. Jan 12, 2026 10.1063/5.0307059

Continuous-wave (CW) lasing at 318 nm is achieved at 20 °C from an ultraviolet B (UVB) laser diode grown on a relaxed AlGaN template atop a sapphire substrate. The device incorporates a refractive ind...

Ultrafast atomic dimerization of Peierls distortion in semimetal molybdenum ditelluride

Zhong Wang, Chunlong Hu, Changchang Gong et al. Jan 12, 2026 10.1063/5.0289803

Semimetal molybdenum ditelluride (1T′-MoTe2) possesses diverse phase transitions, enriching its application prospects. The structural response during these transitions is crucial to understanding the...

Shallow trap dynamics and non-thermal spectral shift in sub-10- <i>μ</i> m InGaN micro-LEDs

Runan Zhang, Yujia Gong, Liang Zhang et al. Jan 12, 2026 10.1063/5.0301981

Miniaturized InGaN micro-light-emitting diodes suffer reliability drifts that are not fully captured by conventional optical/electrical reporting. This study shows that, after 500-h direct current (DC...

Second-harmonic vortex beam generation via parallel continuous-wave all-optical domain structuring

E. Asché, C. Denz, J. Imbrock Jan 12, 2026 10.1063/5.0302503

We report the generation of second-harmonic vortex beams using nonlinear pitchfork holograms directly induced via a parallel all-optical domain structuring technique in lithium niobate. The method emp...

Electric field dependence of nanoscale cathodoluminescence inside Cr doped β-Ga2O3 interfaces

Dheeraj Sapkota, Daniel Halbing, John S. McCloy et al. Jan 12, 2026 10.1063/5.0311203

Chromium (Cr) is a common impurity in β-Ga2O3 crystals, where its characteristic R1 and R2 luminescence lines are susceptible to both the host crystal field and externally applied fields. In this work...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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