Applied Physics Letters

Vol. 128, Issue 2 Issue 2 2026
54
Articles

Articles in this Issue

Enhanced conductance linearity in HfS2-based optoelectronic memristors via a defective h-BN interlayer for high-performance neuromorphic visual system

Lingxin Meng, Jiaqi Han, Peng Li et al. Jan 12, 2026 10.1063/5.0303804

Two-dimensional materials offer potential for developing optoelectronic memristors and neuromorphic visual systems, benefitting from their atomically smooth surfaces and tailorable optoelectronic char...

Giant tunneling electroresistance and multistate data storage in two-dimensional ferroelectric tunnel junctions via polarization–anisotropy coupling

Guogang Liu, San-Huang Ke Jan 12, 2026 10.1063/5.0304739

Achieving large tunneling electroresistance (TER) and multistate data storage is crucial for advancing two-dimensional (2D) ferroelectric tunnel junctions (FTJs) toward high-density nonvolatile memori...

Stacking-engineering magnetoelectric coupling effects in van der Waals type-I multiferroics

Xuanyi Li, Zefang Li, Jing Xu et al. Jan 12, 2026 10.1063/5.0307981

Multiferroic materials have attracted significant attention for their potential applications in multifunctional spintronic devices. However, conventional multiferroics exhibit limited magnetoelectric...

Non-Hermitian optical bistability with polarization quantization in Sm3+:BiPO4

Usman Javed, Muhammad Qasim Khan, Faisal Munir et al. Jan 12, 2026 10.1063/5.0299133

In this study, we investigate non-Hermitian optical bistability in Sm3+:BiPO4 under the influence of polarization quantization. Our work focuses on how polarization affects this bistability, especiall...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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