Negative in-plane Poisson's ratio in [001]-textured PMN-PZT ceramics

M Mingyang Tang (Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,) L Liqing Hu G Guangya Xie (Science and Technology on Sonar Laboratory, Hangzhou Applied Acoustics Research Institute 2 , Hangzhou 310023,) X Xin Liu Y Yike Wang (Key Lab of Biomass Chemical Engineering of Ministry of Education, College of Chemical and Biological Engineering) X Xinran Xu Z Zhuo Xu (PharmaEase Tech Limited) Y Yongke Yan (Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,)

Abstract

[001]-textured 0.4P(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3 (PMN-PZT) ceramics were fabricated by templated grain growth using 3 vol. % BaTiO3. Full matrices of dielectric (εij), elastic (sij, cij), and piezoelectric (dij) parameters were obtained by the resonance–antiresonance method. The ceramics exhibit a quasi-static piezoelectric coefficient d33 of 1490 pC/N and an electromechanical coupling factor k33 of 0.92, approaching the performance levels of piezoelectric single crystals. Notably, the textured PMN-PZT demonstrates an in-plane negative Poisson's ratio of ν12 = −0.13, representing a strong auxetic behavior that has been experimentally confirmed through direct strain–stress measurement. This distinctive characteristic is further corroborated by both laser scanning vibrometer and finite element analysis. Theoretical interpretation suggests that the negative Poisson's ratio stems primarily from stress-induced polarization rotation along the ⟨110⟩ direction. In [001]-textured ceramics, the transverse direction inherently contains this orientation, typically resulting in a low or negative Poisson's ratio. This abnormal Poisson's ratio property may affect device design approaches for transducers, sensors, and energy harvesting applications.

Article Details

Volume / Issue Vol. 128, Issue 2
Published January 12, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

M

Mingyang Tang

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,

L

Liqing Hu

G

Guangya Xie

Science and Technology on Sonar Laboratory, Hangzhou Applied Acoustics Research Institute 2 , Hangzhou 310023,

X

Xin Liu

Y

Yike Wang

Key Lab of Biomass Chemical Engineering of Ministry of Education, College of Chemical and Biological Engineering

X

Xinran Xu

Z

Zhuo Xu

PharmaEase Tech Limited

Y

Yongke Yan

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,