Coherent transport in strongly correlated perovskite-manganite quantum wells

T Tatsuro Endo Y Yasufumi Araki (Advanced Science Research Center, Japan Atomic Energy Agency , Tokai 319-1195,) M Munetoshi Seki (Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656,) H Hitoshi Tabata (Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656,) M Masaaki Tanaka (Department of Electrical Engineering & Information Systems, The University of Tokyo 2 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656,) S Shinobu Ohya (Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656,)

Abstract

Perovskite transition metal oxides (TMOs) are hallmark systems for studying electron correlations, with strong Coulomb interactions reaching the electron volt scale. Such interactions generally hinder coherent charge transport, limiting its observation to only moderately correlated TMOs. Among TMOs with strong electron correlations, the ferromagnetic perovskite manganite La1−xSrxMnO3 (LSMO) has attracted significant attention for spintronics applications due to its half-metallic nature and robust ferromagnetism, with a Curie temperature above room temperature. In this Letter, we report the emergence of oscillatory conduction in tunnel diodes incorporating an epitaxial thin LSMO layer—a phenomenon not previously observed in strongly correlated oxides. The observed oscillations originate from discrete quantum-well states formed via quantum confinement, indicating coherent transport across the LSMO layer. These quantum-well states are quantitatively explained using a tight-binding model tailored for the electronic structure of LSMO. Our findings demonstrate that high-quality epitaxial perovskite manganites can sustain coherent transport, even in the presence of strong electron correlations, offering avenues for oxide-based quantum and spintronics devices.

Article Details

Volume / Issue Vol. 128, Issue 2
Published January 12, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

T

Tatsuro Endo

Y

Yasufumi Araki

Advanced Science Research Center, Japan Atomic Energy Agency , Tokai 319-1195,

M

Munetoshi Seki

Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656,

H

Hitoshi Tabata

Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656,

M

Masaaki Tanaka

Department of Electrical Engineering & Information Systems, The University of Tokyo 2 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656,

S

Shinobu Ohya

Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656,