Room-temperature continuous-wave lasing at 318 nm on a relaxed AlGaN template grown on a sapphire substrate

R Rintaro Miyake (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) T Takumu Saito (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) S Shogo Karino (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) Y Yusuke Sasaki (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) S Shundai Maruyama (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) S Shion Kamiya (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) R Ryota Watanabe S Seiya Kato N Naoki Kitta (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) Y Yuma Miyamoto (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) R Rintaro Kobayashi (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) K Kenta Kitagawa (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) T Tomoya Tanikawa (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) S Sho Iwayama (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) H Hideto Miyake K Koichi Naniwae (Ushio, Inc 3 ., Gotenba 412-0038,) Y Yoshito Jin (The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,) M Masamitsu Toramaru (The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,) T Tatsuya Matsumoto (The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,) Y Yoshihiro Shimazaki (The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,) H Hironori Torii (JSW AFTY Corporation 5 , Yokohama 236-0004,) T Tetsuya Takeuchi (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) S Satoshi Kamiyama (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) M Motoaki Iwaya (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,)

Abstract

Continuous-wave (CW) lasing at 318 nm is achieved at 20 °C from an ultraviolet B (UVB) laser diode grown on a relaxed AlGaN template atop a sapphire substrate. The device incorporates a refractive index-guided ridge-waveguide structure, high-reflectivity SiO2/Ta2O5 distributed Bragg reflector mirrors, and junction-down mounting on a polycrystalline AlN submount for enhanced optical confinement and heat dissipation. Under CW operation at 20 °C, the threshold current density and current are 4.3 kA cm−2 and 64 mA, respectively. These results demonstrate stable room-temperature CW lasing in an AlGaN UVB laser diode, likely advancing compact and manufacturable laser sources for medical and industrial applications.

Article Details

Volume / Issue Vol. 128, Issue 2
Published January 12, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (24)

R

Rintaro Miyake

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

T

Takumu Saito

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

S

Shogo Karino

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

Y

Yusuke Sasaki

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

S

Shundai Maruyama

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

S

Shion Kamiya

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

R

Ryota Watanabe

S

Seiya Kato

N

Naoki Kitta

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

Y

Yuma Miyamoto

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

R

Rintaro Kobayashi

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

K

Kenta Kitagawa

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

T

Tomoya Tanikawa

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

S

Sho Iwayama

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

H

Hideto Miyake

K

Koichi Naniwae

Ushio, Inc 3 ., Gotenba 412-0038,

Y

Yoshito Jin

The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,

M

Masamitsu Toramaru

The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,

T

Tatsuya Matsumoto

The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,

Y

Yoshihiro Shimazaki

The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,

H

Hironori Torii

JSW AFTY Corporation 5 , Yokohama 236-0004,

T

Tetsuya Takeuchi

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

S

Satoshi Kamiyama

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,

M

Motoaki Iwaya

Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,