Room-temperature continuous-wave lasing at 318 nm on a relaxed AlGaN template grown on a sapphire substrate
Abstract
Continuous-wave (CW) lasing at 318 nm is achieved at 20 °C from an ultraviolet B (UVB) laser diode grown on a relaxed AlGaN template atop a sapphire substrate. The device incorporates a refractive index-guided ridge-waveguide structure, high-reflectivity SiO2/Ta2O5 distributed Bragg reflector mirrors, and junction-down mounting on a polycrystalline AlN submount for enhanced optical confinement and heat dissipation. Under CW operation at 20 °C, the threshold current density and current are 4.3 kA cm−2 and 64 mA, respectively. These results demonstrate stable room-temperature CW lasing in an AlGaN UVB laser diode, likely advancing compact and manufacturable laser sources for medical and industrial applications.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (24)
Rintaro Miyake
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Takumu Saito
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Shogo Karino
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Yusuke Sasaki
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Shundai Maruyama
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Shion Kamiya
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Ryota Watanabe
Seiya Kato
Naoki Kitta
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Yuma Miyamoto
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Rintaro Kobayashi
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Kenta Kitagawa
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Tomoya Tanikawa
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Sho Iwayama
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Hideto Miyake
Koichi Naniwae
Ushio, Inc 3 ., Gotenba 412-0038,
Yoshito Jin
The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,
Masamitsu Toramaru
The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,
Tatsuya Matsumoto
The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,
Yoshihiro Shimazaki
The Japan Steel Works, Ltd., Device Technology Laboratory 4 , Yokohama 236-0004,
Hironori Torii
JSW AFTY Corporation 5 , Yokohama 236-0004,
Tetsuya Takeuchi
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Satoshi Kamiyama
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,
Motoaki Iwaya
Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,