Applied Physics Letters
Articles in this Issue
Direct SMA-fed gradient-index metasurface array for efficient microwave power reception
Achieving a balance between efficiency and structural simplicity remains a challenge in conventional long-range wireless power reception systems. This study introduces a microwave power reception (MPR...
Operando spectroscopic monitoring the dynamic transformation of CoNiMoO4 precatalyst toward efficient oxygen evolution
Electrochemical water splitting plays a pivotal role in sustainable hydrogen generation, but its efficiency remains constrained by kinetically sluggish oxygen evolution reaction (OER). Herein, CoNiMoO...
An incoherent superconducting nanowire phonon detector revealing the controversial gate-controlled supercurrent
Superconductor nanodevices are widely applied in quantum computers and quantum detectors. Gate-controlled supercurrent (GCS) provides a potential platform for developing quantum systems, but the mecha...
Dual passivation in air for constructing high-efficiency wide-bandgap perovskite solar cell modules
Wide-bandgap perovskites (WB-PVKs) are highly promising materials for tandem photovoltaic applications, yet their practical performance is significantly hindered by critical issues such as non-radiati...
Exploring the full magneto-ionic oxidation spectrum in Pt/CoFeB/HfO2
We show that in Pt/CoFeB/HfO2 a wide range of oxidation levels at the ferromagnet/oxide interface can be accessed through magneto-ionic gating using ionic liquid gates. Perpendicular magnetic anisotro...
Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas
We investigated low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas (2DEG), which have extremely high sheet resistances of ∼1012 Ω/□. T...
Spontaneous ordering in ultra-large anion size-mismatched BaZr (S1−xOx)3
Chalcogenide perovskite semiconductors, with their excellent optical absorption, chemical stability, and lack of toxicity, have emerged as a promising alternative to traditional halide perovskites. Th...
Field-dependent anisotropic microwave responses in van der Waals ferromagnet Fe4GeTe2
The exploration of two-dimensional van der Waals (2D-vdW) ferromagnets with high Curie temperature (TC) is crucial for the development of high-performance, non-volatile, and low-power spintronic devic...
Defect enhancement of Er emission in single crystal Er2O3
We report observations of crystal defect induced modifications in the laser-excited Er3+ photoluminescence spectra of single-crystal Er2O3 thin films. These include marked enhancement of transition in...
Nonlinear transport in carbon quantum dot electronic devices: Experiment and theory
Carbon quantum dots (CQDs) are a promising material for electronic applications due to their easy fabrication and interesting semiconductor properties. Further, CQDs exhibit quantum confinement and ch...
Enhanced electrocaloric effect in lead-free relaxor ferroelectrics via point defect engineering
The electrocaloric effect enables solid-state refrigeration technology with high energy efficiency and zero global warming potential. Normal displacive ferroelectric materials exhibit the highest elec...
Microscopic-scale defect analysis on <b>β</b>-Ga2O3 through microscopy
β-Ga2O3 is a wide bandgap semiconductor with potential for surpassing current-generation high-power device performance and cost-effectiveness, due to its unique properties and availability of large hi...
High-linearity on-chip GaN-on-Si temperature sensors based on an E-mode-compatible process
In this work, we present GaN-on-Si on-chip temperature (T) sensors and ICs based on field-effect rectifiers (FERs) using an e-mode-compatible process. The single-FER T sensor presents a high sensitivi...
Enhanced flexoelectric response of BaHf<i>x</i>Ti1−<i>x</i>O3 ceramics through polymorph phase boundary in spontaneously polarized surface
Ferroelectric ceramics typically exhibit ultrahigh flexoelectric coefficients that far exceed theoretical values due to various extrinsic factors. It has been demonstrated that the high values are mos...
Low-temperature microwave annealing stabilizes the morphotropic phase boundary in HfO2/ZrO2 superlattice heterostructures
This study presents a method for achieving stable morphotropic phase boundary characteristics in superlattice HfO2/ZrO2 (SL-HZO)-based metal-ferroelectric-metal (MFM) capacitors using low-temperature...
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lac...
Erratum: “Enhancement of second harmonic generation in two-dimensional monolayer materials empowered by merging BICs of photonic crystals” [Appl. Phys. Lett. <b>126</b> , 201702 (2025)]
Dielectric breakdown of atmospheric-pressure grown hexagonal boron nitride single crystals
High-quality hexagonal boron nitride (hBN) has emerged as a reliable dielectric material for two-dimensional (2D) electronic devices because of its atomic flatness, ultrahigh optical transparency, wid...
Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate
In this work, high-performance double-channel AlGaN/GaN Schottky barrier diodes with AlN super back barrier are demonstrated, and the corresponding current transport mechanisms at various anode bias v...
<i>In situ</i> growth of carbon nanotubes in biomass carbon for energy storage: The denser the better?
Carbon nanotubes (CNTs) and their allotropes have been regarded as promising materials for electric double-layer supercapacitors (EDLCs). It is well accepted that the higher surface area of carbon wil...
Quantitative characterization of ZrO2 gate dielectric interface with tellurium
Tellurium (Te) has recently emerged as a promising p-type semiconductor that can be processed at low temperatures, compatible with back end of line CMOS integration. Characterization of tellurium–diel...
The chronic degeneration mechanism of NbOx-based artificial neurons in the active state
The stable operation of the neuromorphic system is significantly constrained by the response imbalance of artificial neurons, which originates from the degradation of devices as switching voltage shif...
Influence of different imaging scales on machine learning-based determination of magnetic parameters from magnetic images
The determination of material parameters is significantly important in material science, which is often a challenging task. Recently, advancements have shown that magnetic parameters, such as the Dzya...
Sc0.2Al0.8N Lamb wave filter with a high temperature stability using the strategy of double-layer SiO2 and groove structure
The Lamb wave filter (LWF) has a moderate bandwidth, and the conventional temperature compensation method with one layer of SiO2 on the Lamb wave resonator (LWR) will significantly reduce its effectiv...
Twist angle dependence of flatbands in trilayer graphene: A first-principles study
Among the most classical two-dimensional (2D) heterostructures, graphene stands out to exhibit unique electronic properties through manipulations of stacking layers, twist angles, strain, and external...