Sc0.2Al0.8N Lamb wave filter with a high temperature stability using the strategy of double-layer SiO2 and groove structure

H Haiyang Li Q Qinwen Xu B Binghui Lin X Xiang Chen J Jie Zhou T Tingting Yang (The MOE Basic Research and Innovation Center for the Targeted Therapeutics of Solid Tumors, School of Basic Medical Sciences, The Second Affiliated Hospital, Jiangxi Medical College, Nanchang University, Nanchang, Jiangxi, China.) Z Zesheng Liu (The Institute of Technological Sciences, Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University 1 , Wuhan 430072,) Y Yan Liu S Shishang Guo Y Yao Cai (Institute of Chemistry) C Chengliang Sun

Abstract

The Lamb wave filter (LWF) has a moderate bandwidth, and the conventional temperature compensation method with one layer of SiO2 on the Lamb wave resonator (LWR) will significantly reduce its effective electromechanical coupling coefficient. This, in turn, narrows the bandwidth of the LWF and limits its application range. This paper achieves high temperature stability for both the LWR and LWF by employing a strategy that combines a double-layer SiO2 and a groove structure based on a Sc0.2Al0.8N film. Finite element analysis is employed to investigate the effect of adding single or double layers of SiO2 films on the temperature stability of the Sc0.2Al0.8N LWR. The simulation results show that applying SiO2 to both the top and bottom of the Sc0.2Al0.8N film can mitigate the reduction in k2 while enhancing temperature stability. The groove structure in the piezoelectric layer can simultaneously improve the temperature coefficient of frequency (TCF) and k2 by altering the electric field distribution and boundary conditions. Measurement results show that the double-layer SiO2 improves the TCF of the LWR to approximately –10 ppm/°C. The grooves can further improve the TCF toward 0 ppm/°C and increase the k2 of LWR.

Article Details

Volume / Issue Vol. 126, Issue 23
Published June 09, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

H

Haiyang Li

Q

Qinwen Xu

B

Binghui Lin

X

Xiang Chen

J

Jie Zhou

T

Tingting Yang

The MOE Basic Research and Innovation Center for the Targeted Therapeutics of Solid Tumors, School of Basic Medical Sciences, The Second Affiliated Hospital, Jiangxi Medical College, Nanchang University, Nanchang, Jiangxi, China.

Z

Zesheng Liu

The Institute of Technological Sciences, Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University 1 , Wuhan 430072,

Y

Yan Liu

S

Shishang Guo

Y

Yao Cai

Institute of Chemistry

C

Chengliang Sun