Applied Physics Letters
Articles in this Issue
High performance vertically integrated double barrier AlN memristive nonvolatile resistive random-access memory
As one of the most promising high-speed nonvolatile memristors, aluminum nitride-based memristors have shown ultrafast switching at or even below nanoseconds. However, the on/off ratio, lifespan, and...
Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
Terahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of...
Zero-field skyrmion creation via surface acoustic waves
We investigate the effect of high-frequency surface acoustic waves on skyrmion bubbles in Cr/Ta/Pt/CoFeB/Pt heterostructures on 128° Y cut lithium niobate. The as-deposited samples are in a single-dom...
Synergistic enhancement of ferroelectric–piezoelectric–photoelectric triad in Pb(Zr0.4, Ti0.6)O3 thin films through self-assembled monolayers
Perovskite oxide ferroelectric materials, such as lead zirconate titanate (PZT), are of critical importance in modern electronics, particularly for applications in nonvolatile memory, actuators, and s...
The barrier height formation mechanism and bulk inhomogeneity in ZnSnN2\Cu Schottky junctions
To reveal the formation mechanism of Schottky barrier heights, inter-diffusion and chemical reaction between ZnSnN2 and the metals (Cu or Ag) are studied. Nitrogen and selective cation out-diffusion a...
Strain-driven transition of phonon scattering mechanisms in BiOCl monolayer: From three-phonon to four-phonon scattering
The layered BiOCl, a star material for photocatalysis, possesses a large bandgap, low-symmetry lattice, and strong phonon anharmonicity induced by lone-pair electrons, which offers a suitable platform...
Probing complex decoherence processes in materials for quantum applications
The primary consideration in developing new material platforms for quantum applications is to optimize coherence. Despite its importance, decoherence processes remain challenging to experimentally int...
Improved electromagnetic wave absorbing in high-entropy few-layered MXene
Two-dimensional high-entropy (HE) MXenes are expected to be excellent electromagnetic wave absorbing (EWA) materials due to the good conductivity, surface functional groups, inherent defects/disorders...
All-optical band structure reconstruction and onset of Landau quantization of Dirac fermions
The nature of relativistic electrons in solids depends on the precise shape of the underlying band structure. Prominently, symmetry-related mechanisms, such as the breaking of time-reversal symmetry i...
Realization of tunable gaps in minimal topological electronic structure of MnBi2Te4 via synergistic Sb doping and surface K modification
Topological materials with minimized topological surface states and tunable energy gaps serve as an ideal platform for investigating topological quantum phenomena. In this study, we engineered a minim...
Sn-assisted epitaxial growth of high-crystallinity κ/ε-Ga2O3 on sapphire (0001) by low-pressure Mist-CVD
The ultrawide-bandgap gallium oxide (Ga2O3) polymorphs have opened frontiers in high-power electronics and multifunctional devices. Among these, the orthorhombic phase (commonly referred to as κ-Ga2O3...
Theoretical analysis of solar cell performance assisted by passive cooling
Passive cooling strategies, such as radiative cooling and evaporation cooling, have attracted lots of interest in the heat dissipation of solar cells. However, how to evaluate the effect of these pass...
Passive signal increase with improved signal-to-background ratio in nonlinear light microscopy through time stretching
This work presents a method to enhance signal intensity (SI) and improve the signal-to-background ratio (SBR) in nonlinear light microscopy (NLM) by employing a simple time-stretching technique applie...
High-performance InSnO tunneling contact transistors via oxygen partial pressure modulation
Thin-film transistors with a source barrier—such as source-gated transistors and tunneling contact transistors—exhibit ultrahigh intrinsic gain (Ai) and low power consumption, making them promising ca...
Emergent photo-thermoelectricity in localized bulk quantum Hall state of graphene
We demonstrate the generation of photovoltage from localized bulk quantum Hall states (QHS) of graphene. Using a graphene device with an inner contact geometry, conduction through the quantum Hall edg...
Redefining Fe-doping effects: Solution-phase redox cycling dominates pre-lattice Ni3<b>+</b> formation and 2/1.5D nanostructure for enhanced OER
Fe doping is widely known to enhance the oxygen evolution reaction (OER) activity of Ni-based electrocatalysts; however, the underlying mechanisms remain controversial, with interpretations focused on...
Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures
To improve the mobility of two-dimensional electron gas (2DEG) in an AlGaN/GaN heterostructure grown by metalorganic chemical vapor deposition, we characterized the defect distribution around the inte...
Thermal imaging of anomalous Ettingshausen effect at low temperatures using infrared lock-in thermography
Thermal imaging technology has significantly advanced the fields of thermal engineering and fundamental physics by enabling precise and non-contact temperature measurements. In the field of spin calor...
Dynamical thermal near-field routing with the non-reciprocal Weyl semi-metal Co3Sn2S2
We demonstrate theoretically the non-reciprocal heating dynamics of two nanoparticles (NPs) in the vicinity of a substrate, all made of the ferromagnetic Weyl semi-metal (WSM) Co3Sn2S2. We show that t...
Strain-modulated valley polarization and piezomagnetic effects in altermagnetic Cr2S2
Altermagnetism combines the advantages of both ferromagnetic and antiferromagnetic systems, offering unique spin-splitting properties in antiferromagnetic materials. Currently, it is established that...
Shear-strain-induced ferromagnetism in antiferromagnetic nickel oxide NiO
The effects of severe shear strain on the magneto-structural correlations in antiferromagnetic nickel oxide (NiO) were investigated using magnetic measurements and x-ray diffraction. The shear strain...
Analytical model of a Tellegen meta-atom
Tellegen response is a nonreciprocal effect that couples electric and magnetic responses of the medium and enables unique optical properties. Here, we develop a semi-analytical model of a Mie-resonant...
Evaluation of exchange stiffness constant in iron garnet film using micromagnetic simulation
Measurement of exchange stiffness constants (ESCs) is crucial for describing magnetization phenomena. Large-scale micromagnetic simulations (MMSs) are used to determine the ESC of iron garnet thin fil...
Negative bias threshold voltage instability and gate reliability in GaN tri-gate HEMTs with ferroelectric charge-trap gate stack
This study demonstrates trap-induced threshold voltage (VTH) instability in hybrid ferroelectric charge-trap tri-gate high-electron-mobility transistors under temperature and negative bias stress. By...
Expanding medium compatibility with lateral-field optoelectronic tweezers
A circuit model and impedance analysis of lateral field optoelectronic tweezers (LOETs) are presented. The circuit elements are derived in terms of the geometrical and material properties of the syste...