Strain-driven transition of phonon scattering mechanisms in BiOCl monolayer: From three-phonon to four-phonon scattering

P Pin-Zhen Jia (School of Science, Hunan Institute of Technology 1 , Hengyang 421002,) L Li-Qin Deng (School of Science, Hunan Institute of Technology 1 , Hengyang 421002,) X Xue-Kun Chen (School of Mathematics and Physics, University of South China 2 , Hengyang 421001,) Z Zhong-Xiang Xie (School of Science, Hunan Institute of Technology 1 , Hengyang 421002,) K Ke-Qiu Chen (Department of Applied Physics, School of Physics and Electronics, Hunan University 3 , Changsha 410082,)

Abstract

The layered BiOCl, a star material for photocatalysis, possesses a large bandgap, low-symmetry lattice, and strong phonon anharmonicity induced by lone-pair electrons, which offers a suitable platform for investigating the relationship between the high-order anharmonicity and structural symmetry. In this work, the thermal conductivity (κl) of the BiOCl monolayer was studied using first-principles calculations and the linearized Boltzmann transport equation, in which four-phonon scattering processes are explicitly considered. Our results indicate that the predicted κl is reduced from 7.1 to 5.2 W/(mK) after including four-phonon scattering (a 27% reduction). When introducing a tensile strain of 3%, the room temperature κl can be further reduced by 77% as compared to that of the strain-free case. Such a huge reduction primarily arises from the flattening transverse acoustic branch and the densified low-frequency phonons in the strained BiOCl monolayer, which enables qualitative changes in the dominant mechanism of phonon scattering: from three-phonon scattering to four-phonon scattering. These findings provide deeper insights into the thermal transport behavior of the BiOCl monolayer and underscore the significant potential of strain engineering as a power tool to tailor high-order anharmonic effects for symmetry-breaking 2D materials.

Article Details

Volume / Issue Vol. 127, Issue 10
Published September 08, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

P

Pin-Zhen Jia

School of Science, Hunan Institute of Technology 1 , Hengyang 421002,

L

Li-Qin Deng

School of Science, Hunan Institute of Technology 1 , Hengyang 421002,

X

Xue-Kun Chen

School of Mathematics and Physics, University of South China 2 , Hengyang 421001,

Z

Zhong-Xiang Xie

School of Science, Hunan Institute of Technology 1 , Hengyang 421002,

K

Ke-Qiu Chen

Department of Applied Physics, School of Physics and Electronics, Hunan University 3 , Changsha 410082,