Applied Physics Letters

Vol. 127, Issue 10 Issue 10 2025
60
Articles

Articles in this Issue

Polar oxide/semiconductor heterojunction: MgO (111)/SiC (0001)

Julio A. do Nascimento, Daniel Pingstone, Adam Kerrigan et al. Sep 08, 2025 10.1063/5.0284175

The layered structures of polar oxides (i.e., metal/oxygen/metal/oxygen/…) can be utilized to engineer the atomic structures and thus tailor the electronic properties of polar oxide/semiconductor inte...

Generation of correlated quantum random number sequences with bright twin beams

Anirudh Shekar, Chirang R. Patel, Jerin A. Thachil et al. Sep 08, 2025 10.1063/5.0279909

Quantum random number generators play a vital role in securing communication and encryption. In the present work, we have produced bright twin beams using four-wave mixing in a double-Λ configuration...

Enhanced air stability and cycling stability of P'2-type layered cathodes for sodium-ion batteries via Pb–Mg synergistic doping

Chenglu Liu, Dongxiao Wang, Shiduo Yang et al. Sep 08, 2025 10.1063/5.0292351

Air stability issues in layered oxides present significant challenges for sodium-ion batteries due to the high activity in humid air. The fundamental instability arises from inherently weak Na–O bondi...

Thermal performance of Kresling origami structures as deployable heat fins

Ahmad F. Zueter, Hussam Sababha, Mohammed F. Daqaq Sep 08, 2025 10.1063/5.0259797

This paper investigates the thermal performance of Kresling origami structures as compact, deployable heat fins for adaptive thermal management applications. These fins are designed to actuate along t...

Plasma damage-free <i>in situ</i> etching of β-Ga2O3 using solid-source gallium in the LPCVD system

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan Sep 08, 2025 10.1063/5.0277909

This work demonstrates an in situ etching technique for β-Ga2O3 using solid-source metallic gallium (Ga) in a low-pressure chemical vapor deposition (LPCVD) system, enabling clean, anisotropic, plasma...

Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe

D. V. Ishchenko, E. L. Molodtsova, S. P. Suprun et al. Sep 08, 2025 10.1063/5.0280504

The peculiarities of the molecular-beam epitaxy of monocrystalline indium-doped Pb1−xSnxTe films grown on (111) BaF2 substrates were studied as a function of the indium incorporation rate in the growt...

Temperature-activated polar domain-wall evolution in non-polar perovskite

Zheyi An, Hiroko Yokota, Marek Paściak et al. Sep 08, 2025 10.1063/5.0289154

Polar domain boundaries in non-polar antiferroelectric crystals exhibit emergent tunable polarity, yet some fundamental questions remain to be answered—particularly the origin of the domain boundaries...

Strain-tunable chiral spin textures via magnetic anisotropy in two-dimensional Janus RuICl monolayer

Peng Han, Jingtong Zhang, Shengbin Shi et al. Sep 08, 2025 10.1063/5.0272907

Dzyaloshinskii–Moriya interaction (DMI) and magnetic anisotropy energy are widely recognized as the primary factors responsible for the formation of chiral magnetic structures. Here, using first-princ...

Transport properties of lattice-matched AlScN/GaN single- and multichannel heterostructures

Thai-Son Nguyen, Chandrashekhar Savant, Aias Asteris et al. Sep 08, 2025 10.1063/5.0281623

Lattice-matched aluminum scandium nitride (AlScN) on gallium nitride (GaN) is an attractive material platform for high-power, high-speed GaN electronics. This study investigates the molecular beam epi...

III-nitride thin film liftoff using electrochemical etching

Yifan Yao, Hanyu Bi, Toru Inatome et al. Sep 08, 2025 10.1063/5.0280302

We report a selective electrochemical etching-based liftoff technique for III-nitride thin films using a heavily Si-doped sacrificial layer. This method enables the detachment of the millimeter-sized...

Molecular coordination-driven interfacial engineering for high-efficiency CsPbI3 perovskite solar cells

Siye Lu, Xiaolong Geng, Jia Liu et al. Sep 08, 2025 10.1063/5.0288605

The intrinsic defects of CsPbI3 significantly degrade the photovoltaic performance of perovskite solar cells. Herein, a multifunctional interfacial modification strategy was developed using the nitrog...

Low loss 4H-SiC photonics for spin-quantum sensing

P. A. Stuermer, T. Steidl, R. Woernle et al. Sep 08, 2025 10.1063/5.0279259

This work presents a comprehensive study on the development of planar integrated photonics for 4H silicon carbide (SiC) quantum sensors, with a focus on achieving high-performance and scalable devices...

Enhancement of thermoelectric performance in Bi2S3 enabled by pressure-induced electronic topological transition

Jing Zou, Dianzhen Wang, Zheng Bi et al. Sep 08, 2025 10.1063/5.0288494

Achieving superior carrier transport is critical in thermoelectric (TE) materials. However, traditional strategies, such as doping and alloying, always generate a trade-off between carrier concentrati...

MXene-tailored CNT cold cathodes and self-powered electron emitters toward plasma generation

Xinyi Wang, Yarong Zhou, Yun Zhao et al. Sep 08, 2025 10.1063/5.0280628

The fabrication of carbon nanotube (CNT) field emitters usually involves a complicated process and shows poor adhesion to the substrate, which leads to inferior electron emission. Taking advantage of...

An optically transparent millimeter-wave absorber based on a double elliptical pattern

Qinglong Lan, Guang Lu, Xiaofeng Xu et al. Sep 08, 2025 10.1063/5.0281524

This study designed and fabricated a flexible and transparent microwave metasurface absorber. The absorber adopts a three-layer structure, consisting of patterned indium tin oxide–polyethylene terepht...

Design of high-absorption electromagnetic absorber through synergistic integration of frequency selective surfaces and 3D metastructures for broadband and wide-angle applications

Chao Jiang, Liwen Chen, Yanqiong Liu et al. Sep 08, 2025 10.1063/5.0285639

A wideband three-dimensional (3D) electromagnetic absorber with a large incidence angle is designed and experimentally investigated using a design methodology that integrates resistive frequency selec...

Resistive switching in SrFeO2.5/Nb:SrTiO3 heterostructures with growth-controlled film orientation

Keon Sahebkar, Chaitanya Sharma, Garrett Baucom et al. Sep 08, 2025 10.1063/5.0282706

Resistive switching, a behavior found in many oxide materials, has the potential to enable emerging computer hardware technologies and architectures. We present resistive switching devices fabricated...

Study on the preparation, formation mechanism, and permanent magnetic properties of anisotropic Nd–Fe–B spherical magnetic powder

Wenhao Zhang, Puyue Xia, Zhaomeng Wang et al. Sep 08, 2025 10.1063/5.0284140

The controllable preparation of anisotropic Nd–Fe–B spherical magnetic powder is a critical breakthrough in overcoming the technical bottleneck of high-performance bonded magnets. This study reports t...

Defect-annealing-induced optical gain recovery in electron-irradiated 4H-SiC UV phototransistors

Qunsi Yang, Yifu Wang, Xinghua Liu et al. Sep 08, 2025 10.1063/5.0287853

The ultraviolet (UV) response of a floating-base 4H-SiC n–p–n phototransistor is characterized before and after 10 MeV electron irradiation. The pristine device demonstrates visible-blind UV detection...

Pulse wave signal analysis and finding the quantitative indicators of cardiovascular health

Yijie Xia, Jiangtao Zuo, Xinming Lin et al. Sep 08, 2025 10.1063/5.0276845

In this study, a pulse wave acquisition system with a pezoresistive pressure sensor using indium tin oxide nanocrystal-plant fiber composites was constructed for acquiring human pulse wave signals and...

Electrocaloric effect at the second-order phase transition in triglycine sulfate: High-resolution measurements of the field dependence

J. Fischer, D. Hägele, J. Rudolph Sep 08, 2025 10.1063/5.0281426

The field dependence of the electrocaloric effect at the second-order phase transition in triglycine sulfate is investigated using a direct, high-resolution method. A characteristic ΔT∝E2/3 dependence...

Programming optimization for alleviating relaxation effect in RRAM high-resistance state

Jiale Wan, Xiaohu Wang, Yongbo Wang et al. Sep 08, 2025 10.1063/5.0259294

Resistive random access memory (RRAM) is considered a highly promising alternative for brain-inspired computing and next-generation memory technologies. However, the conductance states relaxation effe...

Spin-polarized flatband and second-order topological phases in fluorinated C3N

Qing Lin, Pan Zhou, Xiaoning Peng et al. Sep 08, 2025 10.1063/5.0279685

Flat band materials provide a fascinating platform for investigating phenomena such as strong correlations, magnetism, topology, and superconductivity. In this study, we introduce fluorination of C3N...

Deep-level point defects at Ga sites in dilute AlxGa1<b>−</b> <i>x</i>N alloys

P. Kruszewski, J. Coutinho, V. P. Markevich et al. Sep 08, 2025 10.1063/5.0272389

Deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS (L-DLTS) have been applied for studying electron traps in Si-doped dilute AlxGa1−xN films (0 ≤ x ≤ 0.063), grown by metal-orga...

Two-dimensional Cr-based kagomé family with extraordinary magnetic and topological property

Lin Liu, Yan-Nan Shi, Yu-Shan Song et al. Sep 08, 2025 10.1063/5.0268739

Two-dimensional (2D) materials incorporating a kagomé lattice provide a unique platform to explore some physical phenomena, but they are relatively rare. Herein, we theoretically propose a family of 2...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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