Strain-modulated valley polarization and piezomagnetic effects in altermagnetic Cr2S2

C Chen Chen X Xiaoyang He Q Qizhen Xiong (The Faculty of Mathematical & Physical Sciences, University College London (UCL) 2 , London WC1E6BT,) C Chuye Quan (Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT) 3 , Nanjing 210023,) H Haojie Hou (School of Science, Nanjing University of Posts and Telecommunications (NJUPT) 1 , Nanjing 210023,) S Shilei Ji (School of Science, Nanjing University of Posts and Telecommunications (NJUPT) 1 , Nanjing 210023,) J JianPing Yang X Xing'ao Li (Jiangsu Provincial Engineering Research Center of Low Dimensional Physics and New Energy & Institute of Advanced Materials & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,)

Abstract

Altermagnetism combines the advantages of both ferromagnetic and antiferromagnetic systems, offering unique spin-splitting properties in antiferromagnetic materials. Currently, it is established that valley polarization in altermagnetism remains largely insensitive to spin–orbit coupling and spin. We select monolayer Cr2S2 as a model altermagnetic system to investigate the mechanism through which an external field modulates valley polarization in altermagnetism. This effect arises from breaking the diagonal mirror symmetry Mxy under uniaxial strain, which lifts the degeneracy of the X and Y valleys, inducing significant valley polarization. Crucially, biaxial strain preserves Mxy symmetry and fails to induce polarization. Uniaxial strain simultaneously induces valley polarization and a nearly uniform Zeeman-like field in the reciprocal lattice space, reaching up to 118.39T under 5% uniaxial strain. Moreover, the symmetry breaking in the monolayer Cr2S2 leads to strong piezomagnetic effects, merging piezomagnetic and altermagnetic characteristics in two-dimensional materials.

Article Details

Volume / Issue Vol. 127, Issue 10
Published September 08, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

C

Chen Chen

X

Xiaoyang He

Q

Qizhen Xiong

The Faculty of Mathematical & Physical Sciences, University College London (UCL) 2 , London WC1E6BT,

C

Chuye Quan

Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT) 3 , Nanjing 210023,

H

Haojie Hou

School of Science, Nanjing University of Posts and Telecommunications (NJUPT) 1 , Nanjing 210023,

S

Shilei Ji

School of Science, Nanjing University of Posts and Telecommunications (NJUPT) 1 , Nanjing 210023,

J

JianPing Yang

X

Xing'ao Li

Jiangsu Provincial Engineering Research Center of Low Dimensional Physics and New Energy & Institute of Advanced Materials & School of Science, Nanjing University of Posts and Telecommunications 1 , Nanjing 210023,