Applied Physics Letters
Articles in this Issue
Experimental evidence of dominant ultrafast diffusive energy transport by hot electrons in Cu
When the dimensions of structures shrink to the order of the inelastic mean free path of the energy-carrying quasi-particles, the character of energy transport changes from diffusive to ballistic. How...
A bioinspired metal–semiconductor–metal metasurface design: Selective near-infrared photoelectric response and tailored mid-infrared radiation
Reducing noise and enhancing selective sensitivity represent pivotal yet challenging goals in photoelectric-sensing, particularly for infrared detection. Optical-resonant metasurfaces and metal gratin...
Density-controlled Stranski–Krastanow GaN quantum dots grown on in-plane ordered AlN nanowires
GaN quantum dots (QDs) emitting in the ultraviolet (UV) range have been studied both as ensembles and single emitters, but achieving precise tunability over their density and spatial location remains...
Unraveling medium-entropy alloy–ceria heterostructures for oxygen reduction reaction electrocatalysis
The development of highly efficient medium-entropy alloy (MEA)-based electrocatalysts for the oxygen reduction reaction (ORR) is of paramount importance in advancing sustainable energy technologies, i...
Competition-induced bipolar transient photocurrent as a probe of quasi-Fermi level dynamics
Transient photocurrents are promising for applications in intelligent sensing and high-performance photovoltaics due to their fast response and high efficiency. However, the physical origin of transie...
All-optical physiological sensing and communication system on GaN
Multiple-quantum-well (MQW) diodes inherently exhibit both light-emitting and light-detecting capabilities due to the overlap between their emission and detection spectra. In this work, an integrated...
Quantum oscillation in epitaxial Bi2O2Se thin film prepared by pulsed laser deposition
Bi2O2Se (BOS), due to its high carrier mobility, strong spin–orbit coupling effect, and air stability, has garnered significant attention in the field of 2D semiconductors for next-generation electron...
Robust iterative phase retrieval for x-ray in-line holography beyond the weak absorption and noise limits via dynamic physical constraints
Quantitative phase retrieval in x-ray in-line holography is crucial for imaging weakly absorbing samples, yet conventional methods suffer from the breakdown of weak-absorption approximation and severe...
Microscopic origin of dopant-dependent defect states and carrier compensation in Si- and Sn-doped <b> <i>β</i> </b> -Ga2O3
This work reports a systematic investigation of the defect states and carrier compensation mechanisms in Si- and Sn-doped β-Ga2O3 using hybrid density functional theory calculations combined with high...
Spectroscopic imaging- and micro-ellipsometry of MXene-based microelectronic devices
MXenes are two-dimensional (2D) nanomaterials whose optical, structural, and charge-transport properties can be finely tuned through composition and surface chemistry. MXetronics builds on this tunabi...
Scalable van der Waals photonics: High-refractive-index gallium sulfide films with single-crystal optical properties
The integration of high-refractive-index dielectrics into scalable photonic architectures is foundational to advancing integrated circuits and augmented reality displays. Van der Waals (vdW) materials...
GaN quasi-vertical p–i–n diode with polarized bevel termination by sidewall passivation
The bevel edge termination technique has been widely applied in Si-based power devices to enhance the off-state properties, which has been also been adopted in the design of vertical GaN power devices...
High-performance HfO2 dielectric gated Ge-doped <b> <i>κ</i> </b> -Ga2O3 thin-film transistors
Orthorhombic κ-Ga2O3 has emerged as a promising candidate for next-generation power electronics due to its ultra-wide bandgap and high breakdown field. Herein, Ge-doped Ga2O3 thin films were grown via...
Surface oxide charge accumulation induced current suppression in LaB6 thermionic cathodes at high temperature
Thermionic cathodes are widely used in applications ranging from electron microscopes and x-ray tubes to microwave power tubes. However, their short lifetime remains a significant limitation that urge...
Analysis of scanning thermal microscopy measurements on CVD graphene
Scanning thermal microscopy (SThM) results on chemical vapor-deposited graphene supported by different substrates have been analyzed by the finite-element method (FEM). The analysis has been validated...
Reconfigurable threshold voltage and excellent anti-single-event transient performance in the HfO2-based ferroelectric FlexFET
Ferroelectric field effect transistor (FeFET) memory, integrated with the recently discovered HfO2-based ferroelectric thin films, has attracted significant interest as a promising technology for next...
Enhancing lifetimes of thermally modulated active plasmonic sensors
Active plasmonic sensors are an intriguing method of enhancing the sensitivity of traditional plasmonic sensors. One method of introducing active control over surface plasmon excitation is Joule heati...
Experimental study of acoustic loss at microwave frequencies in thin-film lithium niobate
Thin-film lithium niobate (TFLN) has emerged as a versatile platform for phononic and photonic devices with applications ranging from classical signal processing to quantum technologies. However, acou...
An electrothermally actuated high-power MOEMS optical switch with a state-latching mechanism
Optical switches serve as a critical core component in laser ignition systems (LISs), responsible for controlling the ON/OFF state of the optical path. Its performance directly impacts the operational...
Wavefront astigmatism sensing via spin–orbit coupling induced by a <i>q</i> -plate
The q-plate is a new type of polarization optical element with engineered optical anisotropy. New and wide-ranging applications, such as spin–orbit beam generation, angular momentum coupling, signal p...
Physics-integrated inference for signal recovery in non-Gaussian regimes
High-performance room-temperature sensing is often limited by non-stationary 1/f fluctuations and non-Gaussian stochasticity. In spintronic devices, thermally activated Néel switching creates heavy-ta...
Probing the transitions between 2D and 3D states in InGaN/GaN quantum wells via admittance spectroscopy
Carrier transport and recombination mechanisms in InGaN/GaN multiple quantum well (MQW) structures are fundamental to the performance of advanced optoelectronic devices. Thermally activated signals wi...
Low-Reynolds-number fluid–structure interactions in a check valve
Check valves are hydraulic elements that allow fluid to flow in only one direction. Flow control is enabled by fluid–structure interactions that link fluid motion to the deformation of a flexible elem...
Impact of cavity tuning on lasing characteristics for GaN-based vertical-cavity surface-emitting lasers
We demonstrated that cavity tuning—i.e., the alignment of a resonance wavelength relative to a distributed Bragg reflector (DBR) center wavelength—is a key factor influencing the laser characteristics...
Temperature-driven crossover from abrupt thermal to gradual field-driven RESET in single-layer HfO2 RRAMs
We investigate the temperature-dependent resistive switching behavior of single-layer ITO/HfO2/TiN resistive random access memory devices down to 10 K. Devices formed at room temperature exhibit abrup...