Impact of cavity tuning on lasing characteristics for GaN-based vertical-cavity surface-emitting lasers

Naoki Shibahara; Shoki Arakawa; Atsunori Tokushi; Taiki Kitamura; Taichi Nishikawa; Ruka Watanabe; Satoshi Kamiyama; Motoaki Iwaya; Toshihiro Kamei; Tetsuya Takeuchi

doi:10.1063/5.0315945

Impact of cavity tuning on lasing characteristics for GaN-based vertical-cavity surface-emitting lasers

N Naoki Shibahara (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) S Shoki Arakawa (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) A Atsunori Tokushi (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) T Taiki Kitamura (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) T Taichi Nishikawa (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) R Ruka Watanabe (Department of Materials Science and Engineering, Meijo University 1 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502,) S Satoshi Kamiyama (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) M Motoaki Iwaya (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,) T Toshihiro Kamei (Semiconductor Frontier Research Center (SFRC), National Institute of Advanced Industrial Science and Technology (AIST) 2 , 16-1 Onogawa, Tsukuba, Ibaraki 305-8569,) T Tetsuya Takeuchi (Department of Materials Science and Engineering, Meijo University 1 , Nagoya 468-8502,)

Abstract

We demonstrated that cavity tuning—i.e., the alignment of a resonance wavelength relative to a distributed Bragg reflector (DBR) center wavelength—is a key factor influencing the laser characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with AlInN/GaN DBRs. By utilizing in-plane cavity tuning variation across our VCSEL wafer, the effective mirror loss was monotonically increased from 25 to 50 cm−1, resulting in corresponding changes in differential external quantum efficiency, threshold current density, and wall plug efficiency (WPE). The in-plane cavity tuning variation was effectively utilized to extract the internal parameters and identify an optimal mirror loss for high WPE in our GaN-based VCSELs. As a result, an internal loss of 11 ± 6 cm−1, an injection efficiency of 85% ± 10%, and an optimal mirror loss around 40 cm−1, achieving a WPE over 25%, were obtained.

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Article Details

Journal Applied Physics Letters

Volume / Issue Vol. 128, Issue 17

Published April 27, 2026

DOI 10.1063/5.0315945

ISSN 0003-6951

Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences