Applied Physics Letters
Articles in this Issue
Accessibility of doping ranges of semiconductors by terahertz spectroscopy
While established semiconductor measurement techniques such as four-point probe or capacitance-voltage measurements require a physical contact to the material, terahertz spectroscopy is completely con...
Trace alkynyl diol mediated interfacial engineering for ultrastable zinc metal anodes
The uncontrolled growth of Zn dendrites remains a significant obstacle to the advancement of aqueous Zn-ion batteries (AZIBs). Here, we introduce 1,4-butynediol (BTDA) as an electrolyte additive that...
Neutral VC defect qubit in two-dimensional hexagonal GeC monolayer
The controlled realization of defect-based qubits in two-dimensional (2D) semiconductors is crucial for scalable quantum information and sensing technologies. Using first-principles calculations, we i...
Synergistic chlorophyll-derived polymer/NiOx hybrid electrodes for enhanced-performance biobased supercapacitors
Chlorophyll (Chl) and its derivatives have emerged as promising pseudocapacitive electrode materials. Nevertheless, substantial challenges remain in further improving their electrochemical performance...
Can elemental selenium act as optical phase-change material? An insight into its optical behavior
This study investigates the optical properties of monochalcogenide selenium (Se) and assesses its potential as a nonvolatile optical phase-change material (PCM). By leveraging spectroscopic ellipsomet...
All-optical bidirectional synaptic plasticity based on an IGZO voltage-divider architecture for neuromorphic visual perception
In the biological visual retina, the ON/OFF pathways formed by photoreceptors and bipolar cells can exploit incident light stimuli to generate excitatory and inhibitory signals in parallel, enabling i...
High-field electron transport properties of <b> <i>α</i> </b> -Ga2O3
The high-field electron transport properties of alpha-phase gallium oxide (α-Ga2O3) under electric fields up to 1 MV/cm have been investigated using an integrated approach combining full-band first-pr...
Longitudinal evaluation of a precise ciliary body radiofrequency ablation for glaucoma treatment using multimodal imaging
Glaucoma is a progressive optic neuropathy that is accompanied by the development of visual functional defects induced by elevated intraocular pressure (IOP). In the clinic, glaucoma is generally trea...
Electrostatic effects of self-trapped holes in β-Ga2O3 devices
β-Ga2O3 is an ultra-wide bandgap semiconductor with exceptional properties for power electronics and UV-C optoelectronics, but its behavior under illumination remains poorly understood. In this work,...
Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density
Enhancement-mode (E-mode) p-channel field-effect transistors (p-FETs) remain challenging for GaN complementary logic (CL) technology due to their unstable threshold voltage (Vth), low current density,...
Lattice thermal conductivity below Cahill limit: Negative thermal expansion in Pr doped BiCuSeO
Fundamental understanding of lattice softening and phonon transport in crystalline solids is crucial for thermoelectric applications, since the design of thermally insulating solids has gained signifi...
Spin-polarized excitonic luminescence of oriented cesium lead bromine nanowires near the quantum confinement regime
Perovskite nanowires with unique properties, including strong spin–orbit coupling and bright excitonic photoluminescence, are promising for spin-photonics. However, the link between their spin-related...
Atomically thin quantum sensors
Atomically thin two-dimensional materials, with their ultra-thin structure and exceptional sensitivity to the local environment, are emerging as an important platform for next-generation quantum sensi...
Effects of gate-electrode plasmons on remote phonon scattering in thin-film transistor with perovskite barium titanate as high-k gate dielectric
Pentacene thin-film transistors (TFTs) with perovskite barium titanate (BTO) as a high-k gate dielectric have been fabricated on n-type silicon substrates (as gate electrode) at four different carrier...
Beyond conventional Landau scaling in tuning-induced ferroelectric transitions
Recent experiments on quantum paraelectrics have reported deviations from the conventional Landau scaling in tuning-induced ferroelectric transitions, which were attributed to quantum fluctuations mod...
Gamma-ray radiation hardness of Ir contacts in H-terminated diamond MESFETs
We investigate the radiation hardness and electrical stability of Ir-based source and drain contacts employed in hydrogen-terminated diamond MESFETs under 100 kGy γ-ray irradiation followed by thermal...
Tracking visible pulsed laser annealing of Hf0.5Zr0.5O2 heterostructures with <i>in situ</i> transmission electron microscopy
Laser annealing offers a promising route to investigate and control phase formation in hafnium-zirconium oxide (HZO) thin films under rapid thermal conditions. Due to the wide bandgap of this material...
Slowing and storing microwaves in a single superconducting fluxonium artificial atom
Three-level Λ systems provide a versatile platform for quantum optical phenomena such as electromagnetically induced transparency (EIT), slow light, and quantum memory. Such Λ systems have been realiz...
Strain effects on <i>n</i> -type doping in AlN
Controllable doping in aluminum nitride (AlN) and its alloys is essential for deep-ultraviolet light sources. Ionization energies for donors in AlN (SiAl, SN, and SeN) are high. We report first-princi...
Stable ferroelectric domains with uncompensated bound charges in mixed-phase BiFeO3 films
The rapid development of artificial intelligence places high demands on memory devices with low power consumption, which drives the need for non-volatile ferroelectric memory. However, traditional vie...
Temperature-dependent orbital torque in Ru/Co bilayers
Efficient orbital transport in transition metals is central to the advancement of next-generation orbitronics. However, the fundamental scattering mechanisms governing orbital generation and relaxatio...
Gate-length scaling of AlGaN/GaN HEMTs for cryogenic low-noise operation
This work investigates gate-length (LG) scaling of AlGaN/GaN high electron mobility transistors (HEMTs) for cryogenic low-noise radio frequency (RF) operation at 4 K, targeting applications in radio a...
Enhanced energy storage of BaBi4Ti4O15 thin films via non-stoichiometric Ti-excess design
High energy density and high efficiency have long been the pursuit in the development of dielectric capacitors. In this work, energy density and efficiency are synergistically improved by non-stoichio...
Optimized flexible Bi2Te3/FeNi spintronic heterostructure for high-efficiency terahertz emission
Flexible spintronic heterostructure based on topological insulators (TI) enables terahertz (THz) generation for spectroscopy and next-generation communications. Challenges remain in enhancing THz inte...
Room-temperature ferromagnetism engineering in non-van der Waals Fe7S8 via molybdenum doping-induced sulfur vacancy control
Non-van der Waals magnetic materials with tunable room-temperature ferromagnetism (RTFM) are essential for next-generation spintronic devices. However, achieving quantitative control of defects in exp...