Temperature-dependent orbital torque in Ru/Co bilayers

W Wenqi Xu Y Yumin Yang Y Yu Zhang (Xiangya Hospital, Central South University Changsha China) G Gengchen Meng (State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,) Z Zhicheng Xie (Department of Medicine, The University of Chicago, Chicago, IL, USA.) D Dahai Wei (State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,)

Abstract

Efficient orbital transport in transition metals is central to the advancement of next-generation orbitronics. However, the fundamental scattering mechanisms governing orbital generation and relaxation remain elusive. Here, we report a comprehensive study of the temperature-dependent orbital torque in Ru/Co bilayer using spin–torque ferromagnetic resonance. We observe a pronounced enhancement in orbital torque efficiency upon cooling from 300 to 60 K, reaching an increase of approximately 55% in thick films. Thickness-dependent analysis reveals that this performance boost stems from a synergistic increase in both the effective orbital Hall conductivity and the orbital diffusion length. Scaling relations identify extrinsic skew scattering as the dominant generation mechanism and the Elliott–Yafet-like process as the primary relaxation pathway. These findings establish the fundamental scaling laws characterizing orbital transport in light metals, providing critical guidelines for designing thermally robust orbitronic applications.

Article Details

Volume / Issue Vol. 128, Issue 17
Published April 27, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

W

Wenqi Xu

Y

Yumin Yang

Y

Yu Zhang

Xiangya Hospital, Central South University Changsha China

G

Gengchen Meng

State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,

Z

Zhicheng Xie

Department of Medicine, The University of Chicago, Chicago, IL, USA.

D

Dahai Wei

State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,