Optimized flexible Bi2Te3/FeNi spintronic heterostructure for high-efficiency terahertz emission
Abstract
Flexible spintronic heterostructure based on topological insulators (TI) enables terahertz (THz) generation for spectroscopy and next-generation communications. Challenges remain in enhancing THz intensity and mechanical durability. Here, Bi2Te3(10 nm)/FeNi(3 nm) on polyimide substrates was optimized via growth temperature tuning and Pt interlayer insertion. The heterostructure shows a 3.8-fold THz enhancement over single layers, attributed to topological surface states (TSSs) of Bi2Te3. Pt interlayer (1.5 nm) boosts emission by 467% (vs no Pt) and 17% (vs Pt/FeNi bilayer) via the inverse spin Hall effect of Pt and preserved TSSs of the TI. Devices retain 98% THz emission after 1200 bending cycles, highlighting potential for flexible THz emission.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (13)
Yuhang Pu
Key Laboratory for Magnetism and Magnetic Functional Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University 1 , Lanzhou 730000,
Chenxia Guo
Key Laboratory for Magnetism and Magnetic Functional Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University , Lanzhou,
Qi Zhang
Xi Guo
Haiming Xu
Tong Li
Yong Xiao
Dezheng Yang
Key Laboratory for Magnetism and Magnetic Functional Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University , Lanzhou,
Yalu Zuo
Key Laboratory for Magnetism and Magnetic Functional Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University , Lanzhou,
Baoshan Cui
Key Laboratory for Magnetism and Magnetic Functional Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University , Lanzhou,
Li Xi
Huaping Zuo
National Key Laboratory on Vacuum Technology and Physics, Lanzhou Institute of Physics 2 , Lanzhou 730000,
Xiaoxi Liu