Room-temperature ferromagnetism engineering in non-van der Waals Fe7S8 via molybdenum doping-induced sulfur vacancy control

Z Zhongxiao Hou (School of Materials Science and Engineering, Liaocheng University 1 , Hunan Road No. 1, Liaocheng 252000,) C Chenxu Gao (School of Materials Science and Engineering, Liaocheng University 1 , Hunan Road No. 1, Liaocheng 252000,) R Rui Peng Y Yangbo Wang (School of Materials Science and Engineering, Liaocheng University 1 , Hunan Road No. 1, Liaocheng 252000,) C Chuanyu Jin (School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics) H Hongtao Ren (Department of Management Science and Engineering, School of Business, East China University of Science and Technology) G Gang Xiang

Abstract

Non-van der Waals magnetic materials with tunable room-temperature ferromagnetism (RTFM) are essential for next-generation spintronic devices. However, achieving quantitative control of defects in experiments remains challenging. Here, we demonstrate reversible RTFM modulation in wrinkled, nonstoichiometric Fe7S8 thin films through molybdenum (Mo) doping. Using polymer-assisted deposition, we synthesize dual-phase Fe7S8 with controlled Mo incorporation, which systematically reduces sulfur vacancy concentration and drives the composition toward stoichiometric Fe7S8. Remarkably, the saturation magnetization exhibits a non-monotonic trend, reaching a maximum of 1.06 emu/g for a nominal 15 at. % Mo-doped sample, attributed to enhanced Fe–S–Fe superexchange pathways due to vacancy passivation. Concurrently, Mo doping triggers the in situ formation of MoS2 nanosheets and MoS2@Fe7S8 heterostructures without secondary crystalline phases. Our results establish Mo doping as a dual-function strategy for both magnetic engineering and heterointerface creation in non-layered transition metal sulfides, opening avenues for defect-driven spin functionality beyond van der Waals magnets.

Article Details

Volume / Issue Vol. 128, Issue 17
Published April 27, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

Z

Zhongxiao Hou

School of Materials Science and Engineering, Liaocheng University 1 , Hunan Road No. 1, Liaocheng 252000,

C

Chenxu Gao

School of Materials Science and Engineering, Liaocheng University 1 , Hunan Road No. 1, Liaocheng 252000,

R

Rui Peng

Y

Yangbo Wang

School of Materials Science and Engineering, Liaocheng University 1 , Hunan Road No. 1, Liaocheng 252000,

C

Chuanyu Jin

School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics

H

Hongtao Ren

Department of Management Science and Engineering, School of Business, East China University of Science and Technology

G

Gang Xiang