Applied Physics Letters
Articles in this Issue
MOCVD growth of p-GaN-gated N-polar GaN HEMT heterostructures
This study investigates Mg-doped p-GaN gates integrated into N-polar GaN HEMT heterostructures grown by metal–organic chemical vapor deposition. Three epitaxial designs were compared to identify p-GaN...
Enhancing single-mode stability and optical power of AlGaN-based DUV lasers by 1/4λ phase-shifted surface DFB gratings
AlGaN-based distributed-feedback (DFB) laser diodes (LDs) operating at 280 nm and incorporating surface gratings with different phase shifts were designed and investigated. Compared to Fabry–Pérot (FP...
Electron localization in Janus structure enhances phonon thermal transport in M2C (M = V, Nb, Ta) MXene
Despite Janus materials showing great potential for thermal conductivity tuning, the mechanisms remain poorly understood, as structural asymmetry challenges conventional symmetric theories. Here, we i...
AlN/GaN/InGaN interface engineering for high-efficiency InGaN-based red quantum wells grown on Si
InGaN-based red light-emitting diodes (LEDs) grown on Si have gained tremendous interest for full-color micro-display applications. To achieve efficient red pixels, a major challenge in realizing high...
Temperature-dependent carrier dynamics in red InGaN quantum wells revealed by cathodoluminescence
In this work, we investigate carrier recombination dynamics and defect-related emission behavior in high-indium content InGaN platelets containing a single quantum well (QW) and a transition layer (TL...
Bioinspired acoustic flow sensor for low-frequency underwater acoustic vector detection
Spider webs can couple acoustic signals with maximum physical efficiency over a broad frequency range. Inspired by the acoustic flow sensing mechanism of spider webs, a fiber-optic Fabry–Pérot (F–P) h...
Ammonia source molecular beam epitaxy of ScAlN/GaN HEMTs with AlN exclusion layers
In this work, ScAlN/GaN high electron mobility transistor heterostructures were grown by molecular beam epitaxy with an ammonia source. The impact of inserting an AlN exclusion layer between the ScAlN...
MnBi2Te4/3D-microstructure hybrid for THz detection
Terahertz (THz) detectors are critical for frontier applications such as material characterization, nondestructive testing, and high-speed sensing, demanding ultra-high responsivity, low noise, and ro...
Study on the synergistic effect of electrical bias and proton irradiation on the electrical performance degradation of <b> <i>β</i> </b> -Ga2O3 Schottky barrier diodes
In this work, the synergistic effect of 5 MeV proton irradiation and different biases on the electrical performance of a β-Ga2O3 Schottky barrier diode was studied. Experimental results demonstrate th...
Structure-defined molecular heat transport in a two-dimensional conjugated metal–organic framework
Understanding thermal transport in two-dimensional metal–organic frameworks (2D MOFs) is of both fundamental and technological importance. Although coordination chemistry and framework architecture of...
Orbital torque effect in Mo-based magnetic heterostructures
Utilizing the orbital current effect represents an effective strategy for enhancing current-induced torque in magnetic heterostructures. Molybdenum (Mo) is theoretically predicted to exhibit a large o...
Unraveling water-induced degradation mechanisms in lead-free perovskites toward durable solar cells
Despite their outstanding optoelectronic properties, lead-based perovskites suffer from poor environmental stability and intrinsic lead toxicity, which severely hinder their practical applications. Th...
FinLN: 3D fin lithium niobate acoustic resonators
We demonstrate a three-dimensional fin lithium niobate (FinLN) acoustic resonator fabricated from thick lithium niobate on insulator using deep ion etching and sidewall electrode patterning. The FinLN...
Floquet quantum anomalous Hall effect with a high Chern number in nonmagnetic K2NaAs monolayer
Featuring multiple dissipationless edge channels, the high-Chern number quantum anomalous Hall effect (QAHE) offers a highly promising platform for low-power spintronic applications. Here, we propose...
Investigation on compositional pulling effect of InGaN red multiple quantum wells and its remedy
Achieving InGaN quantum wells (QWs) with high indium compositions for red emission presents significant challenges. One challenge is that the red peak is often accompanied by a short-wavelength emissi...
Thermal redistribution of valence-band holes and optical polarization in AlGaN (225–230 nm) far-UVC quantum wells on sapphire and IQE evaluation
Accurate evaluation of internal quantum efficiency (IQE) in far-ultraviolet-C AlGaN light-emitting diodes relies on proper treatment of light extraction efficiency, which is commonly assumed to be tem...
Spatial imaging of spin-dephasing time of nitrogen-vacancy centers around single dislocation in diamonds
We spatially measured the spin-dephasing time (T2*) of nitrogen-vacancy centers around a single 45° mixed dislocation in a 12C-enriched diamond film. At distances greater than 2 μm from the dislocatio...
ZnO-based active integrated photonic devices for the ultraviolet band
Ultraviolet (UV) communication offers significant advantages for military and industrial applications, such as non-line-of-sight transmission, enhanced security, and robust anti-jamming capabilities....
Origin of donor compensation in monoclinic (Al <i>x</i> Ga1−x)2O3 alloys
(AlxGa1−x)2O3 alloys are frequently used in heterostructures with monoclinic Ga2O3, resulting in a large conduction-band offset, which leads to charge-carrier confinement, a property that is desirable...
Field-free and efficient nanosecond spin–orbit torque switching in optimized WTe2/Fe3GaTe2 heterostructures
Spin–orbit torque (SOT) driven magnetization switching in all-van der Waals (vdW) heterostructures is a promising route toward next-generation, high-density spintronic memories. Improving switching ef...
Ultra-wideband phononic frequency combs in AlScN-on-Si via Duffing-enhanced four-wave mixing
This work reports the generation of an ultra-wideband phononic frequency comb in aluminum scandium nitride (AlScN)-on-silicon resonators by single-tone excitation. The generated comb spans a bandwidth...
Superlattice-like Ge2Sb2Te5/Sb2S3 based phase-change memory enabling linear conductance modulation for neuromorphic computing
Artificial synaptic devices that emulate biological synaptic behavior have garnered significant research interest for their potential in enabling efficient and low-power computing architectures. Phase...
Enhanced resistive switching performance via air-stable FA3Sb2I9 thin films for flexible and multilevel memory applications
Organic–inorganic hybrid perovskites show promise for resistive random-access memory, especially antimony-based types due to their excellent optoelectronic properties and low toxicity. Herein, FA3Sb2I...
Microcavity VCSELs for cryogenic single-mode optical data link to achieve 28 fJ/bit at 136 Gbps
We report on the development of microcavity vertical-cavity surface-emitting lasers (VCSELs) for cryogenic operation based on a 1/2-λ cavity and a &lt;2-μm oxide aperture. Optical spectra show sin...
Electron spin relaxation via tunneling-activated Dresselhaus spin–orbit fields in semiconductor superlattices
Controlling electron spin relaxation is a critical technology in semiconductor spintronics. In (110)-oriented GaAs/AlGaAs quantum wells (QWs), the D'yakonov–Perel (DP) mechanism—a relevant relaxation...