ZnO-based active integrated photonic devices for the ultraviolet band

B Bingheng Meng (State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China 1 , Chengdu 611731,) X Xianfu Wang (State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 2006 Xinyuan Ave. Chengdu China) R Rui Chen L Longxing Su (School of Integrated Circuits (International School of Microelectronics), Dongguan University of Technology 2 , Dongguan 523808,)

Abstract

Ultraviolet (UV) communication offers significant advantages for military and industrial applications, such as non-line-of-sight transmission, enhanced security, and robust anti-jamming capabilities. However, the development of integrated UV photonics significantly lags behind visible and near-infrared systems, primarily due to a shortage of suitable active materials and a lack of effective on-chip integration strategies. This work addresses this critical gap by demonstrating a UV integrated photonic platform based on zinc oxide (ZnO) with a pistol-shaped microstructure. We successfully synthesized waveguide-connected microdisks that monolithically integrate a gain medium, a high-Q whispering-gallery-mode laser cavity (Q ≈ 1300), and a waveguide. The structure enables highly directional and on-chip transmission of UV laser emission. Furthermore, the coupled microdisk-waveguide system achieved a guided-propagation efficiency of 22.9%. The combination of spectroscopic measurements and finite-difference time-domain simulations confirms the lasing mechanism and efficient signal routing. This study not only establishes ZnO as a formidable material for active UV photonics but also provides a novel and robust architecture for realizing complex on-chip functionalities.

Article Details

Volume / Issue Vol. 128, Issue 19
Published May 11, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (4)

B

Bingheng Meng

State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China 1 , Chengdu 611731,

X

Xianfu Wang

State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 2006 Xinyuan Ave. Chengdu China

R

Rui Chen

L

Longxing Su

School of Integrated Circuits (International School of Microelectronics), Dongguan University of Technology 2 , Dongguan 523808,