Applied Physics Letters

Vol. 128, Issue 19 Issue 19 2026
60
Articles

Articles in this Issue

Atomic-scale insight into GaAs-based heterostructures in vertical-cavity surface-emitting lasers

Li Tan, Chuyu Zhong, Victoria Cao et al. May 11, 2026 10.1063/5.0334497

Vertical-cavity surface-emitting lasers (VCSELs) are key light sources for short-reach optical interconnects, sensing, and three-dimensional imaging, where device performance and reliability criticall...

An optical displacement transducer with system-intrinsic linearity achieved by a laser diode

Can Fang, Yuxi Ruan, Yanguang Yu et al. May 11, 2026 10.1063/5.0324212

High-fidelity state tracking with minimal latency and compact hardware is essential for advanced vehicle suspension control systems. Self-mixing interferometry (SMI) based sensing, distinguished by it...

Observation and characterization of cusp catastrophe within a generic silicon-based DETF-type MEMS resonator

E. Uka, C. Zhao May 11, 2026 10.1063/5.0323584

Singularities occur when the parameter space of a system folds, or comes together, to a single point. These occur in several dynamical physical systems and therefore are key to our understanding of ma...

Mg-annealing process for realizing ohmic contact on p-type Al0.6Ga0.4N while recovering ultraviolet light absorption

Shun Lu, Kazuto Shibata, Maki Kushimoto et al. May 11, 2026 10.1063/5.0335538

We have demonstrated a fabrication process for a ultraviolet (UV)-light-transparent ohmic contact layer on p-type Al0.6Ga0.4N, called the Mg-annealing process. By applying the Mg-annealing process on...

Doping-induced passivation of the Cu2ZnSnS4/MoS2 back interfaces

Liangli Chu, Jian Guo, Linfeng Yu et al. May 11, 2026 10.1063/5.0321704

The performance of thin-film solar cells is often limited by interfacial defects that act as nonradiative recombination centers. In particular, Cu2ZnSnS4 solar cells suffer from dangling bonds of cati...

Exploiting the intramolecular charge transfer direction to amplify the BODIPY probe response

Xinze Liu, Peng Zhu, Meilin Guo et al. May 11, 2026 10.1063/5.0320936

The high-performance fluorescent probes hinge on their intramolecular charge transfer (ICT) pathways. The unidirectional planarized intramolecular charge transfer (PLICT) and bidirectional twisted int...

Erratum: “Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing” [Appl. Phys. Lett. <b>127</b> , 182103 (2025)]

Tomoya Okuda, Shunsuke Ota, Kouei Kubota et al. May 11, 2026 10.1063/5.0336351

Hierarchical Ti3CNTx/CNF composite films with expanded interlayer spacing for high-performance flexible micro-supercapacitors

Chenggang Jia, Shulin Yang, Jiang Liu et al. May 11, 2026 10.1063/5.0325865

The practical energy storage application of two-dimensional (2D) MXenes is fundamentally constrained by the restacking of nanosheets, which severely impedes ion transport kinetics. Here, we demonstrat...

High-performance ScGaN nanowire photocatalysts for photochemical nitrogen fixation under ambient conditions

Milad Fathabadi, Hyotaik Kang, Khalid N. Anindya et al. May 11, 2026 10.1063/5.0332169

In this work, scandium gallium nitride (ScGaN) nanowires are investigated for photochemical nitrogen fixation to produce ammonia (NH3). GaN nanowires, a recently reported high-performance III-nitride...

Low resistive GaN-based tunnel junctions grown at low temperatures in triple-junction LEDs

Satoshi Yamaguchi, Hinata Uda, Kazuki Osada et al. May 11, 2026 10.1063/5.0324604

We systematically investigated growth temperature dependence on operating voltages of GaN-based tunnel junctions by metalorganic vapor phase epitaxy. Low resistive GaN-based tunnel junctions showing r...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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