Field-free and efficient nanosecond spin–orbit torque switching in optimized WTe2/Fe3GaTe2 heterostructures
Abstract
Spin–orbit torque (SOT) driven magnetization switching in all-van der Waals (vdW) heterostructures is a promising route toward next-generation, high-density spintronic memories. Improving switching efficiency and achieving nanosecond-scale operation are essential for practical applications. Here, we demonstrate room-temperature, field-free SOT magnetization switching in WTe2/Fe3GaTe2 heterostructures, achieved through an optimized fabrication process. The device achieves a high switching ratio of 90% at a low current density on the order of 105 A/cm2. Moreover, we demonstrate nanosecond-timescale magnetization switching while maintaining high switching ratio and energy efficiency. These results advance the viability of all-vdW heterostructures for energy-efficient, high-speed memory applications.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (17)
Sicheng Zhou
Jiakai Yang
Guojing Hu
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190,
Zanhong Chen
Kewen Shi
Bingbing Tong
Junya Feng
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190,
Ziwei Dou
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190,
Zhaozheng Lyu
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190,
Xiaohui Song
Jie Shen
Haitao Yang
Hua Ke
College of Materials and Chemical Engineering
Peiling Li
Guangtong Liu
Fanming Qu
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190,
Li Lu