Enhancing single-mode stability and optical power of AlGaN-based DUV lasers by 1/4λ phase-shifted surface DFB gratings

G Ganwei Zhou (State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,) S Shunpeng Lu (State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,) R Ruojia Zhang (State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,) Z Zhongxu Liu (State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Department of Chemistry, College of Chemistry and Chemical Engineering) B Baofeng Yu (State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,) K Ke Jiang (International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics) S Shanli Zhang (State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,) Z Zihui Zhang X Xiaojuan Sun D Dabing Li

Abstract

AlGaN-based distributed-feedback (DFB) laser diodes (LDs) operating at 280 nm and incorporating surface gratings with different phase shifts were designed and investigated. Compared to Fabry–Pérot (FP) and other phase-shifted designs, the DFB LD with a 1/4 phase shift exhibits the best performance, achieving a threshold current of 17.39 mA (25.4% lower than FP), a slope efficiency of 1.254 W/A (411.1% of FP), and a side-mode suppression ratio of 25 dB at 0.10 A. Systematic analysis reveals that the 1/4 phase shift introduces a localized defect mode at the stop band center, thereby lifting Bragg-mode degeneracy and strengthening longitudinal-mode selectivity, leading to a significant improvement in slope efficiency. Furthermore, scattering-loss analysis indicates that the design can tolerate a dislocation density of up to 2.2 × 109 cm−2, highlighting fabrication feasibility on AlN/sapphire substrates. This design outlines a promising route toward low-threshold, high-power, single-mode, and cost-effective AlGaN Deep-ultraviolet DFB LDs.

Article Details

Volume / Issue Vol. 128, Issue 19
Published May 11, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

G

Ganwei Zhou

State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,

S

Shunpeng Lu

State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,

R

Ruojia Zhang

State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,

Z

Zhongxu Liu

State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Department of Chemistry, College of Chemistry and Chemical Engineering

B

Baofeng Yu

State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,

K

Ke Jiang

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics

S

Shanli Zhang

State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,

Z

Zihui Zhang

X

Xiaojuan Sun

D

Dabing Li