Applied Physics Letters
Articles in this Issue
InGaN-based heterostructures for solar water splitting with various mechanisms of photogenerated carrier separation
In this study, we present a photocatalytic application based on three distinct types of three-dimensional (3D) nitride heterostructures: self-assembled core–shell InGaN/GaN microrods, 3D semipolar Inx...
Lithographically defined Si3N4 torsional pendulum
Torsion pendulums provide an opportunity to trap large masses in a potential weak enough to explore two-body gravitation. Cooled to, and then released from, a ground state, weak quantum effects, inclu...
Growth and optical properties of polar-, nonpolar, and semi-polar wurtzite ScGaN films
Wurtzite ScGaN offers a promising platform for anisotropic optoelectronic and piezoelectric functionalities, provided that its crystallographic orientation can be precisely controlled. Here, we demons...
Flexible electrolyte-gated oxide transistors for synaptic memory and neuromorphic computing
Flexible neuromorphic hardware integrating learning, memory, and reliable information processing is crucial for next-generation wearable electronics and artificial intelligent systems. Here, we develo...
A highly sensitive diamond NV magnetometer using Ramsey interferometry with a short sensor-to-sample distance
In this study, we developed a diamond quantum magnetometer based on Ramsey interferometry with a short sensor-to-sample distance. Conventional biomagnetic sensors with ensemble nitrogen-vacancy center...
Analyte-class-dependent electrostatic–transport coupling in graphene FET biosensors
The transfer curve of a graphene field-effect transistor (GFET) biosensor encodes analyte information through multiple figures of merit, yet how electrostatic gating and carrier transport couple at th...
Multiwavelength plasmonic optoelectronic memristor for color image classification via physical reservoir
Optoelectronic memristors have tremendous potential for constructing highly efficient neuromorphic visual systems because of their integration of sensing, storage, and computing. Here, a multiwaveleng...
Machine-learning-identified two-dimensional van der Waals multiferroics for four-state nonvolatile memory
Two-dimensional (2D) van der Waals (vdW) multiferroics offer an attractive platform for four-state nonvolatile memory by combining switchable ferroelectric (FE) polarization and magnetization within a...
Investigation of the microscopic mechanisms for InGaN quantum well performance optimization in UVA-LEDs
InGaN multiple quantum wells (MQWs) operating in the ultraviolet A spectral band face significant challenges in achieving high quantum efficiency due to the pronounced quantum-confined Stark effect (Q...
All optical broadband tunable quantum frequency shifter
A frequency shifter of the photon is a key component for frequency-multiplexed high-capacity quantum communications and frequency-encoded quantum computation. Existed methods for shifting the frequenc...
Demonstration of exchange biased de Gennes spin valves
De Gennes spin valves, consisting of a thin superconductor sandwiched between two ferromagnetic insulating layers, have been shown to exhibit nonvolatile bistable switching behavior, making them attra...
Consistent description of room-temperature electron spin relaxation in GaAs/AlGaAs (001) quantum wells
Spin relaxation of two-dimensional electrons in GaAs/AlGaAs (001) quantum wells (QWs) has been widely studied and is generally governed by the D'yakonov–Perel' (DP) mechanism at room temperature, yet...
Broadband C <b>+</b> L-band waveguide amplifier enabled by co-doping with dual-size PbS/CdS quantum dots
In this work, we propose and demonstrate a broadband waveguide amplifier based on dual-size core–shell PbS/CdS quantum dot (QD) co-doping. PbS/CdS QDs with emission peaks at 1508 and 1604 nm, respecti...
High dynamic range lensless on-chip microscopy via an overexposure inverse-projection operator
Lensless on-chip microscopy (LoM) enables high-throughput, label-free imaging with a compact setup and high numerical aperture. Its performance is limited by sensor saturation, which distorts high-int...
Repairing etched sidewall surface of InGaN/GaN micro-light emitting diode through neutral N/H radicals in high vacuums
Sidewall defects induced in the etching process critically limit the development of high-performance, small-size gallium nitride-based light emitting diodes (LEDs). Although conventional post-etch tec...
Terahertz quantum-cascade vertical-external-cavity surface-emitting laser with high-contrast grating output coupler
We report a twofold increase in slope efficiency of a terahertz quantum-cascade vertical-external-cavity surface-emitting laser enabled by an all-dielectric high-contrast grating output coupler (OC)....
Optical study of the two-dimensional electron gas and the total electronic polarization discontinuity in Sc <i>x</i> Al1− <i>x</i> N/GaN heterostructures
Wurtzite ScxAl1−xN/GaN heterostructures are predicted to exhibit large polarization discontinuities at the interface, leading to the formation of two-dimensional electron gases with high sheet carrier...
High-performance WSe2 Geiger avalanche photodetector from 405 to 808 nm
Avalanche photodiodes are attractive for weak-light detection. However, conventional avalanche devices usually suffer from high breakdown voltage, large dark current, and a limited gain–noise trade-of...
Optically stimulated spin dynamics in a multi-domain CoO/Pt bilayer
The magneto-optical birefringence (MOB) effect has been used to explore the ultrafast spin dynamics of a MgO(001)/CoO(8 nm)/Pt(2 nm)/Al2O3(3 nm) structure using optical pump–probe measurements. Energy...
Diamond current sensor integrated with a magnetic flux concentrator
Low-frequency weak-current measurements are essential for applications such as nanoscale electronic characterization, biological ionic-current sensing, and battery leakage monitoring. While magnetomet...
Investigation of hot electrons in polarization-graded AlGaN/GaN HEMTs
Hot electrons in polarization-graded AlGaN/GaN high electron mobility transistors (HEMTs) were investigated using electroluminescence (EL) spectroscopy and compared to reference conventional abrupt-in...
Hidden ordered compound-layer and its tailoring of the electronic/optical property in Ge2Sb2SexTe5−x alloys
Ge2Sb2SeₓTe5−ₓ (0 &lt; x &lt; 5, GSST) alloys represent an emerging class of phase-change materials for integrated photonics. However, the microscopic origins underlying their superior perform...
Field-free spintronic terahertz emitter with polarization tunability
With the rapid expansion of terahertz (THz) applications in next-generation communication systems, imaging technologies, and quantum manipulation, the realization of efficient and highly integrated TH...
Gate-tunable superconducting tunneling spectra of Ti/LaAlO3/KTaO3 (111) planar junctions
The KTaO3 (111) interface has attracted considerable attention due to its distinctive superconducting properties, which differ substantially from those of SrTiO3-based interfaces. Despite extensive in...
Enhancing the fatigue performance of laminated hafnium zirconium oxide ferroelectric thin films via reducing interfacial charge density
Laminated HfO2-based ferroelectric thin films show great promise for applications in high-density ferroelectric field-effect transistor memories, nanoelectromechanical system resonators, and energy st...