Applied Physics Letters
Articles in this Issue
Ultrafast interfacial charge transfer and fast interface relaxation in graphene-WS2 van der Waals heterostructures
Graphene-WS2 (Gr-WS2) van der Waals heterostructures have emerged as a versatile platform for ultrafast optoelectronics, offering unprecedented control over interfacial charge dynamics. However, the p...
GaInAsSb absorbers and AlGaAsSb multipliers for 2- <b> <i>μ</i> </b> m separate absorption charge and multiplication avalanche photodiodes
Ga0.71In0.29As0.25Sb0.75 and Al0.85Ga0.15As0.07Sb0.93 layers were grown on GaSb (100) substrates and characterized as candidate absorber and multiplier materials for 2 μm separate absorption, charge,...
High-performance Ka-band AlN-buffer GaN HEMTs with enhanced dynamic and breakdown characteristics achieving 10.05 W/mm <i>P</i> sat and 53.05% PAE
This work presents a high-performance Ka-band GaN high electron mobility transistor (HEMT) utilizing an undoped AlN buffer layer to replace the conventional Fe-doped GaN buffer. This AlN-buffer struct...
Achieving low ON-resistance in E-mode regrown U-shaped p-GaN gate multi-channel HEMT
This work demonstrates an E-mode regrown U-shaped p-GaN gate multi-channel HEMT on a sapphire substrate. The multi-channel access region is favorable to reducing the ON-resistance (RON). E-mode operat...
Robust growth of layered Sn2P2S6 nanoplates with strong in-plane optical anisotropy
Layered ternary metal phosphorous chalcogenides (TMPCs) with low-symmetry structure have emerged as promising candidates for developing high-performance polarization-sensitive optoelectronics and nonl...
Three-dimensional high-uniformity magnetic field coils optimized by an IHO algorithm
Highly uniform-magnetic fields play a crucial role in a wide range of quantum systems. In this paper, an improved hippopotamus optimization (IHO) algorithm is introduced to optimize the structure of t...
Integrating single-crystal LiNbO3 thin film on diamond for high-frequency surface acoustic wave devices
The continuous performance leap of surface acoustic wave (SAW) devices is primarily driven by the evolution of piezoelectric-on-insulator substrates. Featuring exceptional acoustic velocity and therma...
Spin-reorientation-triggered non-monotonic low-temperature coercivity and voltage-gated two-stage hydrogenation in PrCo5
The spin-reorientation transition (SRT) in rare-earth permanent magnets often reconfigures magnetic anisotropy, yet its direct impact on low-temperature coercivity remains underexplored. In this work,...
Flexible optoelectronic memristor with photo-enhanced resistive switching for low-light visual perception
Flexible neuromorphic visual systems require high-performance optoelectronic memristors with robust mechanical flexibility and stability. Conventional perovskite memristors suffer from poor film quali...
Interfacial ordering reverses the boiling curve in supercritical fluids
Heat transfer in supercritical fluids is commonly interpreted as single-phase convection, where heat fluxes vary monotonically with wall superheat. In this work, a counterintuitive phenomenon, i.e., t...
Revealing the underlying radiation degradation of quantum well solar cells via dynamic bandwidth analysis
We propose a dynamic bandwidth characterization strategy to investigate the radiation degradation mechanisms in GaAs quantum well solar cells. Contrary to conventional assumptions that enhanced electr...
Monolithically integrated electrically pumped terahertz scalar vortex lasers
We report monolithically integrated, electrically pumped terahertz (THz) scalar vortex lasers based on a metal–metal waveguide platform. Each device integrates a distributed-feedback THz quantum casca...
Achieving ultralow contact resistance in copolymer organic transistors via a solution-processed dopant-assisted modification layer for tunneling injection enhancement
The challenge of achieving Ohmic contacts fundamentally limits the performance of organic electronic devices, primarily due to high contact resistance resulting from Schottky contact at the metal–orga...
Evaluation of cation ordering in ZnSnP2 via non-polarized Raman spectroscopy
Evaluation of the degree of order is a crucial issue for ternary derivatives of III–V and II–IV semiconductors owing to the strong correlation between their optical bandgap and the degree of atomic di...
Superconducting qubit control using cryogenic frequency conversion
Expanding to higher qubit frequencies introduces the challenge of routing &gt;20 GHz signals into a dilution refrigerator without adding excess thermal load or frequency-dependent loss. In this wo...
Dual roles of oxygen vacancy in hafnium oxide for passivating silicon surface defects
Oxygen vacancy (VO) defects serve as the primary electron traps, addressing the limited out-of-plane carrier transport in HfO2-passivated Si-based heterojunction devices, while their roles in passivat...
Polarization-dependent, morphology-driven alignment and stability of microparticles via optical tweezers
In this Letter, we observed the polarization-dependent axial alignment effect of microparticles induced by a highly focused laser beam. We theoretically and experimentally verified that the microparti...
Photodarkening in crystalline BaGa4Se7
Nonlinear chalcogenide single crystals play a key role in mid-infrared photonics, enabling efficient frequency conversion and high-power laser operation. In this work, we report room-temperature photo...
Low-noise quantum dots in ultra-shallow Ge/SiGe heterostructures for prototyping hybrid semiconducting–superconducting devices
Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research into spin qubits in...
Nonvolatile phase-state-gated OAM metasurface holography for dual-key access
Orbital-angular-momentum (OAM)-selective metasurface holography offers a promising route for spatial-mode encryption, but purely modal multiplexing is often limited by intermodal leakage, increased sa...
Giant modulation of the photogalvanic effect in two-dimensional SnP2S6/CuInP2S6 ferroelectric heterojunctions
The photogalvanic effect (PGE) enables the direct conversion of light into current in non-centrosymmetric materials, providing a promising route toward self-powered optoelectronics devices. However, a...
Suspension balance model: A finite-element implementation for contraction–expansion flows
Shear-induced migration of particles relative to the bulk motion in suspensions is predicted to be strongly amplified by geometric singularities, making suspension balance model (SBM) computations nea...
Quantum key distribution over a metropolitan network using an integrated photonics-based prototype
Transitioning quantum key distribution (QKD) toward industrial-scale deployment requires the development of practical, stable, resilient, and cost-effective hardware that can be manufactured at large...
Epitaxial growth of superconducting TiN films by atomic layer deposition
Epitaxial titanium nitride (TiN) thin films are attractive for electronic and superconducting devices, as their structural perfection critically influences electrical transport and interfacial propert...
Record low sheet resistance in homoepitaxial N-polar AlN/GaN heterostructures using digital-alloy barrier by plasma-assisted molecular beam epitaxy
In this work, we demonstrate N-polar AlN/GaN heterostructures grown on free-standing GaN substrates by plasma-assisted molecular beam epitaxy, featuring an ultra-low sheet resistance at room temperatu...